Enhancement of tunneling current in phosphorene tunnel field effect transistors by surface defects
2018 ◽
Vol 20
(8)
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pp. 5699-5707
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Keyword(s):
The effects of the staggered double vacancies, hydrogen (H), 3d transition metals, for example cobalt, and semiconductor covalent atoms, for example, germanium, nitrogen, phosphorus (P) and silicon adsorption on the transport properties of monolayer phosphorene were studied using density functional theory and non-equilibrium Green's function formalism.
2010 ◽
Vol 114
(7)
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pp. 3248-3255
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2014 ◽
Vol 2
(46)
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pp. 10017-10030
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2015 ◽
Vol 17
(17)
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pp. 11292-11300
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2015 ◽
Vol 3
(16)
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pp. 4039-4049
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2009 ◽
Vol 1
(1)
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pp. 24-28
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