Tuning the electronic properties of bilayer group-IV monochalcogenides by stacking order, strain and an electric field: a computational study

2018 ◽  
Vol 20 (1) ◽  
pp. 214-220 ◽  
Author(s):  
Ze-Yu Li ◽  
Ming-Yang Liu ◽  
Yang Huang ◽  
Qing-Yuan Chen ◽  
Chao Cao ◽  
...  
Keyword(s):  
Electric Field ◽  
Electronic Properties ◽  
Computational Study ◽  
Group Iv ◽  
Stacking Order

As the isoelectronic counterpart of phosphorene, monolayer group IV–VI binary MX (M = Ge, Sn; X = Se, S) compounds have drawn considerable attention in recent years.

Band gap modulation of Janus graphene nanosheets by interlayer hydrogen bonding and the external electric field: a computational study

2015 ◽  
Vol 3 (14) ◽  
pp. 3416-3421 ◽  
Author(s):  
Feng Li ◽  
Yafei Li
Keyword(s):  
Hydrogen Bonding ◽  
Electric Field ◽  
Band Gap ◽  
Electronic Properties ◽  
External Electric Field ◽  
Computational Study ◽  
Graphene Nanosheets ◽  
Band Gap Modulation

The electronic properties of hydrofluorinated graphene nanosheets can be efficiently modified by interlayer C–H⋯F–C hydrogen bonding.

Effect of multilayer structure, stacking order and external electric field on the electrical properties of few-layer boron-phosphide

2016 ◽  
Vol 18 (24) ◽  
pp. 16229-16236 ◽  
Author(s):  
Xianping Chen ◽  
Chunjian Tan ◽  
Qun Yang ◽  
Ruishen Meng ◽  
Qiuhua Liang ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electric Field ◽  
Electronic Properties ◽  
External Electric Field ◽  
Multilayer Structure ◽  
2D Systems ◽  
Two Dimensional ◽  
Direct Bandgap ◽  
Boron Phosphide ◽  
Stacking Order

Development of nanoelectronics requires two-dimensional (2D) systems with both direct-bandgap and tunable electronic properties as they act in response to the external electric field (E-field).

Computational study on strain and electric field tunable electronic and optical properties of InTe monolayer

2021 ◽  
Vol 151 ◽  
pp. 106816
Author(s):  
Thi-Nga Do ◽  
Vo T.T. Vi ◽  
Nguyen T.T. Binh ◽  
Nguyen N. Hieu ◽  
Nguyen V. Hieu
Keyword(s):  
Optical Properties ◽  
Electric Field ◽  
Computational Study ◽  
Electronic And Optical Properties

scholarly journals Effects of stacking method and strain on the electronic properties of the few-layer group-IVA monochalcogenide heterojunctions

RSC Advances ◽  
2018 ◽  
Vol 8 (52) ◽  
pp. 29862-29870 ◽  
Author(s):  
Yonghong Hu ◽  
Caixia Mao ◽  
Zhong Yan ◽  
Ting Shu ◽  
Hao Ni ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Group Iv ◽  
Biaxial Strain ◽  
Group Iva

We studied the effect of stacking method and biaxial strain on the electronic properties of the few-layer group-IV monochalcogenides heterojunction.

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