scholarly journals Order–disorder phase transition in an anhydrous pyrazole-based proton conductor: the enhancement of electrical transport properties

2017 ◽  
Vol 19 (37) ◽  
pp. 25653-25661 ◽  
Author(s):  
M. Widelicka ◽  
K. Pogorzelec-Glaser ◽  
A. Pietraszko ◽  
P. Ławniczak ◽  
R. Pankiewicz ◽  
...  
Keyword(s):  
Phase Transition ◽  
Heat Treatment ◽  
Electrical Conductivity ◽  
Transport Properties ◽  
Crystalline Structure ◽  
Electrical Transport ◽  
Proton Conductor ◽  
Electrical Transport Properties ◽  
Disorder Phase Transition

The heat treatment of the anhydrous proton conductor causes a change in the crystalline structure and improves electrical conductivity.

scholarly journals Pressure-Induced Structural Phase Transition and Metallization in Ga2Se3 up to 40.2 GPa under Non-Hydrostatic and Hydrostatic Environments

Crystals ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 746
Author(s):  
Meiling Hong ◽  
Lidong Dai ◽  
Haiying Hu ◽  
Xinyu Zhang
Keyword(s):  
Phase Transition ◽  
Electrical Conductivity ◽  
High Pressure ◽  
Phase Transformation ◽  
Transport Properties ◽  
Electrical Transport ◽  
Structural Phase ◽  
Structure Evolution ◽  
Systematic Research ◽  
Electrical Transport Properties

A series of investigations on the structural, vibrational, and electrical transport characterizations for Ga2Se3 were conducted up to 40.2 GPa under different hydrostatic environments by virtue of Raman scattering, electrical conductivity, high-resolution transmission electron microscopy, and atomic force microscopy. Upon compression, Ga2Se3 underwent a phase transformation from the zinc-blende to NaCl-type structure at 10.6 GPa under non-hydrostatic conditions, which was manifested by the disappearance of an A mode and the noticeable discontinuities in the pressure-dependent Raman full width at half maximum (FWHMs) and electrical conductivity. Further increasing the pressure to 18.8 GPa, the semiconductor-to-metal phase transition occurred in Ga2Se3, which was evidenced by the high-pressure variable-temperature electrical conductivity measurements. However, the higher structural transition pressure point of 13.2 GPa was detected for Ga2Se3 under hydrostatic conditions, which was possibly related to the protective influence of the pressure medium. Upon decompression, the phase transformation and metallization were found to be reversible but existed in the large pressure hysteresis effect under different hydrostatic environments. Systematic research on the high-pressure structural and electrical transport properties for Ga2Se3 would be helpful to further explore the crystal structure evolution and electrical transport properties for other A2B3-type compounds.

Computational Analysis of Strain Effects on Electrical Transport Properties of Crystalline Nanocomposite Thin Films

2011 ◽  
Author(s):  
Hua Li ◽  
Gang Li
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Band Structure ◽  
Transport Properties ◽  
Electrical Transport ◽  
Electronic Band Structure ◽  
Electrical Transport Properties ◽  
Electronic Band ◽  
Strain Effects ◽  
Nanocomposite Thin Films

In this work, we model the strain effects on the electrical transport properties of Si/Ge nanocomposite thin films. We utilize a two-band k·p theory to calculate the variation of the electronic band structure as a function of externally applied strains. By using the modified electronic band structure, electrical conductivity of the Si/Ge nanocomposites is calculated through a self-consistent electron transport analysis, where a nonequilibrium Green’s function (NEGF) is coupled with the Poisson equation. The results show that both the tensile uniaxial and biaxial strains increase the electrical conductivity of Si/Ge nanocomposite. The effects are more evident in the biaxial strain cases.

Recent developments on the magnetic and electrical transport properties of FeRh- and Rh-based heterostructures

2022 ◽  
Author(s):  
Xiaoyan Zhu ◽  
Yang Xu ◽  
Cuimei Cao ◽  
Tian Shang ◽  
Yali Xie ◽  
...  
Keyword(s):  
Thin Film ◽  
Phase Transition ◽  
Transport Properties ◽  
Electrical Transport ◽  
Degrees Of Freedom ◽  
Electrical Transport Properties ◽  
Vast Number ◽  
Thin Film Form ◽  
Recent Developments ◽  
Film Form

Abstract It is fascinating how the binary alloy FeRh has been the subject of a vast number of studies almost solely for a single-phase transition. This is, however, reasonable, considering how various degrees of freedom are intertwined around this phase transition. Furthermore, the tunability of this phase transition—the large response to tuning parameters, such as electric field and strain—endows FeRh huge potential in applications. Compared to the bulk counterpart, FeRh in the thin-film form is superior in many aspects: Materials in thin-film form are often more technologically relevant in the first place; in addition, the substrates add extra dimensions to the tunability, especially when the substrate itself is multiferroic. Here we review recent developments on the magnetic and transport properties of heterostructures based on FeRh and its end-member Rh, with the latter providing a new route to exploiting spin-orbit interactions in functional spintronic heterostructures other than the more often employed 5d metals. The methods utilized in the investigation of the physical properties in these systems, and the design principles employed in the engineering thereof may conceivably be extended to similar phase transitions to other magnetic materials.

Synthesis and Electrical Transport Properties of TiCo1-xPdxSb Half-Heusler Compounds

2007 ◽  
Vol 280-283 ◽  
pp. 405-408 ◽  
Author(s):  
Min Zhou ◽  
Li Dong Chen ◽  
Chu De Feng ◽  
Xiang Yang Huang
Keyword(s):  
Electrical Conductivity ◽  
Transport Properties ◽  
Electrical Transport ◽  
Single Phase ◽  
Great Increase ◽  
Solid State Reaction Method ◽  
Heusler Compounds ◽  
Electrical Transport Properties ◽  
Large Power ◽  
Reaction Method

Pd-doped TiCo1-xPdxSb (0 £ x £ 0.08) half-Heusler compounds were synthesized by a solid-state reaction method and their electrical transport properties in the temperature range of 300-900 K were investigated. Single phase TiCo1-xPdxSb was obtained in the range of 0 £ x £ 0.08. The lattice parameters increased with Pd content. Doping of Pd on the Co site resulted in a great increase of electrical conductivity without significant decrease of Seebeck coefficient. A large power factor of 26 µW/K2 cm was observed for TiCo0.92Pd0.08Sb compound at 300 K.

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