Kinetics of volatile impurity removal from silicon by electron beam melting for photovoltaic applications
2017 ◽
Vol 19
(41)
◽
pp. 28424-28433
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Keyword(s):
A full domain control model is established to analyze the kinetics of volatile impurities removal from silicon by electron beam melting. The removal mechanisms of P, Al and Ca are clarified.
2012 ◽
Vol 476-478
◽
pp. 1781-1784
Keyword(s):
2019 ◽
Vol 96
◽
pp. 53-58
◽
Keyword(s):
Keyword(s):
1995 ◽
Vol 53
◽
pp. 256-257
Keyword(s):
2021 ◽
Vol 291
◽
pp. 117024
Keyword(s):