Kinetics of volatile impurity removal from silicon by electron beam melting for photovoltaic applications

2017 ◽  
Vol 19 (41) ◽  
pp. 28424-28433 ◽  
Author(s):  
Shuang Shi ◽  
Pengting Li ◽  
Jianxiong Meng ◽  
Dachuan Jiang ◽  
Yi Tan ◽  
...  

A full domain control model is established to analyze the kinetics of volatile impurities removal from silicon by electron beam melting. The removal mechanisms of P, Al and Ca are clarified.

2012 ◽  
Vol 476-478 ◽  
pp. 1781-1784
Author(s):  
Fu Min Xu ◽  
Zheng Gu ◽  
Shu Ang Shi ◽  
Yi Tan ◽  
Da Chuan Jiang ◽  
...  

Electron beam melting is an effective method to remove volatile impurities in silicon, during which impurities such as P, Al and Ca etc. can be removed to less than 0.3×10-4wt.%. However, so far there is few research on the influence of electron beam parameters, such as beam density and beam size, on molten pool morphology, hence electron beam melting process has not been completely understood, which leads to low energy utilization. In this paper, on the basis of beam size calibration, the influence of beam density and beam size on molten pool morphology is investigated and the concept of melting angle is proposed to characterize molten pool morphology. At the same time, the optimal molten pool morphology for impurities removal and the corresponding electron beam parameters are also analyzed.


2019 ◽  
Vol 96 ◽  
pp. 53-58 ◽  
Author(s):  
Shuang Shi ◽  
Pengting Li ◽  
Dachuan Jiang ◽  
Yi Tan ◽  
Xu Li ◽  
...  

Author(s):  
J. Drucker ◽  
R. Sharma ◽  
J. Kouvetakis ◽  
K.H.J. Weiss

Patterning of metals is a key element in the fabrication of integrated microelectronics. For circuit repair and engineering changes constructive lithography, writing techniques, based on electron, ion or photon beam-induced decomposition of precursor molecule and its deposition on top of a structure have gained wide acceptance Recently, scanning probe techniques have been used for line drawing and wire growth of W on a silicon substrate for quantum effect devices. The kinetics of electron beam induced W deposition from WF6 gas has been studied by adsorbing the gas on SiO2 surface and measuring the growth in a TEM for various exposure times. Our environmental cell allows us to control not only electron exposure time but also the gas pressure flow and the temperature. We have studied the growth kinetics of Au Chemical vapor deposition (CVD), in situ, at different temperatures with/without the electron beam on highly clean Si surfaces in an environmental cell fitted inside a TEM column.


2020 ◽  
Vol 39 (4) ◽  
Author(s):  
Jan Kober ◽  
Alexander Kirchner ◽  
Alena Kruisova ◽  
Milan Chlada ◽  
Sigrun Hirsekorn ◽  
...  

2021 ◽  
pp. 153041
Author(s):  
Elizabeth A.I. Ellis ◽  
Michael A. Sprayberry ◽  
Christopher Ledford ◽  
Jameson P. Hankwitz ◽  
Michael M. Kirka ◽  
...  

Author(s):  
Mohammad Karimzadeh Kolamroudi ◽  
Mohammed Asmael ◽  
Mustafa Ilkan ◽  
Naser Kordani

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