Formation and structures of Au–Rh bimetallic nanoclusters supported on a thin film of Al2O3/NiAl(100)

2017 ◽  
Vol 19 (22) ◽  
pp. 14566-14579 ◽  
Author(s):  
Po-Wei Hsu ◽  
Zhen-He Liao ◽  
Ting-Chieh Hung ◽  
Hsuan Lee ◽  
Yu-Cheng Wu ◽  
...  

The crystallinity, orientation, and lattice parameters of Au–Rh bimetallic clusters on Al2O3/NiAl(100) are revealed and dominated by Rh.

RSC Advances ◽  
2017 ◽  
Vol 7 (22) ◽  
pp. 13362-13371 ◽  
Author(s):  
Hsuan Lee ◽  
Zhen-He Liao ◽  
Po-Wei Hsu ◽  
Ting-Chieh Hung ◽  
Yu-Cheng Wu ◽  
...  

The varied infrared absorption intensity of CO on bimetallic clusters reflects altered electronic states of CO-binding surface atoms.


2019 ◽  
Vol 55 (3) ◽  
pp. 373-376 ◽  
Author(s):  
Weijun Zhou ◽  
Youxing Fang ◽  
Jiangtao Ren ◽  
Shaojun Dong

Illustrative pathways for the preparation of bimetallic nanoclusters using DNA-AgNC, and a schematic representation of the reduction of 4-NP to 4-AP in the presence of DNA-AgNC or bimetallic nanoclusters.


2016 ◽  
Vol 1141 ◽  
pp. 51-53
Author(s):  
Chetan Zankat ◽  
V.M. Pathak ◽  
Pratik Pataniya ◽  
G.K. Solanki ◽  
K.D. Patel ◽  
...  

Amorphous SnSe thin films were deposited by thermal evaporation technique on glass substrates kept at room temperature in a vacuum better than 10-5Torr. A detailed study of structural and optical properties of 150 nm thin film was carried out. The selected area diffraction patterns obtained by TEM for this thin film were analyzed by a new method that involves accurate determination of lattice parameters by image processing software. The obtained results are in good agreement with the JCPDS data. Optical transmission spectra obtained at room temperature were analyzed to study optical properties of deposited thin films. It has been found that indirect carrier transition is responsible for optical absorption process in the deposited thin films.


1999 ◽  
Vol 77 (7) ◽  
pp. 515-520
Author(s):  
AAI Al-Bassam

Thin film polycrystalline solar cells based on CuIn1–xGaxSe2 have been fabricated and studied with x values from 0 to 1.0. The lattice parameters, grain size, and band gap were measured. Crystal structure and X-ray data of CuIn1–xGaxSe2 were determined using X-ray diffractometry. These materials had a cubic structure with x ≥ 0.5 and a tetragonal structure with x ≤ 0.5. The lattice constants vary linearly with composition. Grain size was measured using X-ray diffraction where the grain size increased linearly with Ga content. A grain size of 1.83-3.52 μm was observed with x ≤ 0.5, while it increased to 4.53 μm for x = 0.58.PACS No.: 70.73


2017 ◽  
Vol 147 (4) ◽  
pp. 044704 ◽  
Author(s):  
Hsuan Lee ◽  
Zhen-He Liao ◽  
Po-Wei Hsu ◽  
Ting-Chieh Hung ◽  
Yu-Cheng Wu ◽  
...  

RSC Advances ◽  
2014 ◽  
Vol 4 (60) ◽  
pp. 31602-31613 ◽  
Author(s):  
Y.-D. Li ◽  
T.-W. Liao ◽  
C. X. Wang ◽  
C.-S. Chao ◽  
T.-C. Hung ◽  
...  

The alloying of Pt with Au did not alter the dehydrogenation of methanol on the Pt sites but affected the scission of the C–O bond of methanol.


2012 ◽  
Vol 606 (15-16) ◽  
pp. 1173-1179 ◽  
Author(s):  
Chiun-Yu Ho ◽  
Rahul B. Patil ◽  
Chao-Chuan Wang ◽  
Chen-Sheng Chao ◽  
Yu-Da Li ◽  
...  

2013 ◽  
Vol 618 ◽  
pp. 132-139 ◽  
Author(s):  
Y.D. Li ◽  
T.C. Hong ◽  
T.W. Liao ◽  
M.F. Luo

2018 ◽  
Vol 14 (2) ◽  
pp. 5477-5487 ◽  
Author(s):  
M. Abdel-Rahman

Binary semiconductor CdSe and CdS thin films are widely used for optoelectronic devices and window materials. The formation of ternary CdSe1-xSx thin films improves the physical characteristics of the binary CdSe thin films. The importance of CdSe1-xSx thin film is the change of band gap when incorporating S into the CdSe. This change in energy gap recommends CdSe1-xSx thin film for photovoltaic and photoconductive cells applications. In this work, polycrystalline CdSe1-xSx thin films have been grown in terms of thermal evaporation technique. X-ray diffractometry has been used to determine the lattice parameters and the crystallite size of the CdSe1-xSx mixed crystals. The variation in lattice parameters with composition from x = 0 to x = 1 were linearly. The crystallite size varies parabolically with the change in composition. The energy gap, opt g E , values of CdSe1-xSx thin films were estimated in terms of first derivative of absorbance with respect to wavelength and found to be increased with the formation of the ternary compound Cd-Se-S and with increasing the S content as expense of Se. This wider energy gap of the prepared films, which permits extra light to reach the solar cell junction, was correlated with the change in the microstructure parameters of thin films.


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