Growth of two dimensional silica and aluminosilicate bilayers on Pd(111): from incommensurate to commensurate crystalline

2017 ◽  
Vol 19 (21) ◽  
pp. 14001-14011 ◽  
Author(s):  
Jin-Hao Jhang ◽  
Chao Zhou ◽  
Omur E. Dagdeviren ◽  
Gregory S. Hutchings ◽  
Udo D. Schwarz ◽  
...  
Keyword(s):  
Strain Energy ◽  
Structural Transition ◽  
Lattice Strain ◽  
Two Dimensional ◽  
Al Doping

2D silicate lattice strain energy was significantly reduced by Al-doping resulting in a structural transition from incommensurate to commensurate crystalline.

Effects of Shear Deformation of Struts in Hexagonal Lattices on their Effective In-Plane Material Properties

2021 ◽  
Vol 1034 ◽  
pp. 193-198
Author(s):  
Pana Suttakul ◽  
Thongchai Fongsamootr ◽  
Duy Vo ◽  
Pruettha Nanakorn
Keyword(s):  
Shear Deformation ◽  
Material Properties ◽  
Strain Energy ◽  
Equivalent Strain ◽  
Homogenization Method ◽  
Two Dimensional ◽  
Engineering Applications ◽  
Large Numbers ◽  
Effective Material Properties ◽  
Unit Cells

Two-dimensional lattices are widely used in many engineering applications. If 2D lattices have large numbers of unit cells, they can be accurately modeled as 2D homogeneous solids having effective material properties. When the slenderness ratios of struts in these 2D lattices are low, the effects of shear deformation on the values of the effective material properties can be significant. This study aims to investigate the effects of shear deformation on the effective material properties of 2D lattices with hexagonal unit cells, by using the homogenization method based on equivalent strain energy. Several topologies of hexagonal unit cells and several slenderness ratios of struts are considered. The effects of struts’ shear deformation on the effective material properties are examined by comparing the results of the present study, in which shear deformation is neglected, with those from the literature, in which shear deformation is included.

Structural Transition in the Quasi-Two-Dimensional Organic Superconductor κ-(ET)2Cu[N(CN)2]Br Studied by13C MAS NMR

1998 ◽  
Vol 10 (10) ◽  
pp. 797-801 ◽  
Author(s):  
André Deluzet ◽  
Hadrien Mayaffre ◽  
Pawel Wzietek ◽  
Paul Sotta ◽  
Eric Dumont ◽  
...  
Keyword(s):  
Structural Transition ◽  
Mas Nmr ◽  
Organic Superconductor ◽  
Two Dimensional

Coupled electronic and structural transition in the quasi two-dimensional conductors KxP4W8O32

1999 ◽  
Vol 103 (1-3) ◽  
pp. 2636-2639 ◽  
Author(s):  
S. Drouard ◽  
P. Foury ◽  
P. Roussel ◽  
D. Groult ◽  
J. Dumas ◽  
...  
Keyword(s):  
Structural Transition ◽  
Two Dimensional

Two-dimensional NiO nanosheets with enhanced room temperature NO2sensing performance via Al doping

2017 ◽  
Vol 19 (29) ◽  
pp. 19043-19049 ◽  
Author(s):  
Shuai Wang ◽  
Da Huang ◽  
Shusheng Xu ◽  
Wenkai Jiang ◽  
Tao Wang ◽  
...  
Keyword(s):  
Room Temperature ◽  
Gas Sensing ◽  
Two Dimensional ◽  
Al Doping ◽  
Sensing Properties ◽  
Gas Sensing Properties ◽  
Nio Nanosheets

Defects caused by Al3+doping significantly affect the gas-sensing properties of NiO nanosheets.

scholarly journals Structural-transition-induced quasi-two-dimensional Fermi surface in FeSe

2016 ◽  
Vol 94 (13) ◽  
Author(s):  
Yue Sun ◽  
Tatsuhiro Yamada ◽  
Sunseng Pyon ◽  
Tsuyoshi Tamegai
Keyword(s):  
Fermi Surface ◽  
Structural Transition ◽  
Two Dimensional

scholarly journals Amorphization and Recrystallization in MeV Ion Implanted InP Crystals

1988 ◽  
Vol 100 ◽  
Author(s):  
Fulin Xiong ◽  
C. W. Nieh ◽  
D. N. Jamieson ◽  
T. Vreeland ◽  
T. A. Tombrello
Keyword(s):  
Ion Implantation ◽  
Structural Transition ◽  
Lattice Strain ◽  
Analytical Techniques ◽  
Compound Semiconductors ◽  
Physical Processes ◽  
Coherent Picture ◽  
Post Implantation ◽  
Comprehensive Study ◽  
Ion Implanted

ABSTRACTA comprehensive study of MeV-15N-ion-implanted InP by a variety of analytical techniques has revealed the physical processes involved in MeV ion implantation into III-V compound semiconductors as well as the influence of post-implantation annealing. It provides a coherent picture of implant distribution, structural transition, crystalline damage, and lattice strain in InP crystals induced by ion implantation and thermal annealing. The experimental results from the different measurements are summarized in this report. Mechanisms of amorphization by implantation and recrystallization through annealing in MeV-ion-implanted InP are proposed and discussed in light of the results obtained.

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