Wet chemical etching induced stress relaxed nanostructures on polar & non-polar epitaxial GaN films

2017 ◽  
Vol 19 (13) ◽  
pp. 8787-8801 ◽  
Author(s):  
Monu Mishra ◽  
Abhiram Gundimeda ◽  
Shibin Krishna ◽  
Neha Aggarwal ◽  
Bhasker Gahtori ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Porous Structures ◽  
High Current ◽  
Induced Stress ◽  
Current Conduction ◽  
Wet Chemical ◽  
Wet Chemical Etching

Chemical etching induced stress-relaxed & defect minimized faceted nanopyramids, flat/trigonal nanorods and porous structures on polar & non-polar GaN with reduced wettability & high current conduction.

Photoluminescence of samples produced by electroless wet chemical etching: Between silicon nanowires and porous structures

2011 ◽  
Vol 208 (4) ◽  
pp. 893-899 ◽  
Author(s):  
Felix Voigt ◽  
Vladimir Sivakov ◽  
Viktor Gerliz ◽  
Gottfried H. Bauer ◽  
Björn Hoffmann ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Chemical Etching ◽  
Porous Structures ◽  
Wet Chemical ◽  
Wet Chemical Etching

Decapsulation Techniques for Cu Wire Bonding Package

2009 ◽  
Author(s):  
Dongmei Meng ◽  
Joe Rupley ◽  
Chris McMahon
Keyword(s):  
Laser Ablation ◽  
Thin Layer ◽  
Chemical Etching ◽  
Wire Bonding ◽  
Methods And Techniques ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
Reliability Issue ◽  
Etch Time ◽  
Device Technology

Abstract This paper presents decapsulation solutions for devices bonded with Cu wire. By removing mold compound to a thin layer using a laser ablation tool, Cu wire bonded packages are decapsulated using wet chemical etching by controlling the etch time and temperature. Further, the paper investigates the possibilities of decapsulating Cu wire bonded devices using full wet chemical etches without the facilitation of laser ablation removing much of mold compound. Additional discussion on reliability concerns when evaluating Cu wirebond devices is addressed here. The lack of understanding of the reliability of Cu wire bonded packages creates a challenge to the FA engineer as they must develop techniques to help understanding the reliability issue associated with Cu wire bonding devices. More research and analysis are ongoing to develop appropriate analysis methods and techniques to support the Cu wire bonding device technology in the lab.

scholarly journals Controlling the Facet of ZnO during Wet Chemical Etching Its (0001) O‐Terminated Surface

Small ◽  
2020 ◽  
Vol 16 (51) ◽  
pp. 2007045
Author(s):  
Mei Sun ◽  
Bocheng Yu ◽  
Mengyu Hong ◽  
Zhiwei Li ◽  
Fengjiao Lyu ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Wet Chemical ◽  
Wet Chemical Etching

scholarly journals In Situ Study of the Wet Chemical Etching of SiO2 and Nanoparticle@SiO2 Core–Shell Nanospheres

2021 ◽  
Author(s):  
Albert Grau-Carbonell ◽  
Sina Sadighikia ◽  
Tom A. J. Welling ◽  
Relinde J. A. van Dijk-Moes ◽  
Ramakrishna Kotni ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Core Shell ◽  
In Situ Study ◽  
Wet Chemical ◽  
Wet Chemical Etching

Controllable end shape modification of ZnO nano-arrays/rods by a simple wet chemical etching technique

2015 ◽  
Vol 48 (36) ◽  
pp. 365303 ◽  
Author(s):  
Jingchang Sun ◽  
Ting Zhao ◽  
Zhangwei Ma ◽  
Ming Li ◽  
Cheng Chang ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Shape Modification ◽  
Etching Technique ◽  
Wet Chemical ◽  
Wet Chemical Etching

NOHSO4/HF – A Novel Etching System for Crystalline Silicon

2007 ◽  
Vol 62 (11) ◽  
pp. 1411-1421 ◽  
Author(s):  
Sebastian Patzig ◽  
Gerhard Roewer ◽  
Edwin Kroke ◽  
Ingo över
Keyword(s):  
Gas Phase ◽  
Chemical Etching ◽  
Silicon Surface ◽  
Crystalline Silicon ◽  
Etching Solution ◽  
Wide Range ◽  
Ft Ir ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
Etching System

Solutions consisting of HF - NOHSO4 - H2SO4 exhibit a strong reactivity towards crystalline silicon which is controlled by the concentrations of the reactive species HF and NO+. Selective isotropic and anisotropic wet chemical etching with these solutions allows to generate a wide range of silicon surface morphology patterns. Traces of Ag+ ions stimulate the reactivity and lead to the formation of planarized (polished) silicon surfaces. Analyses of the silicon surface, the etching solution and the gas phase were performed with scanning electron microscopy (SEM), DR/FT-IR (diffusive reflection Fourier transform infra-red), FT-IR, Raman and NMR spectroscopy, respectively. It was found that the resulting silicon surface is hydrogen-terminated. The gas phase contains predominantly SiF4, NO and N2O. Furthermore, NH4+ is produced in solution. The study has confirmed the crucial role of nitrosyl ions for isotropic wet chemical etching processes. The novel etching system is proposed as an effective new way for selective surface texturing of multi- and monocrystalline silicon. A high etching bath service lifetime, besides a low contamination of the etching solution with reaction products, provides ecological and economical advantages for the semiconductor and solar industry.

Fabrication of ultrafine gratings on GaAs by electron beam lithography and two‐step wet chemical etching

1990 ◽  
Vol 57 (12) ◽  
pp. 1212-1214 ◽  
Author(s):  
T. Katoh ◽  
Y. Nagamune ◽  
G. P. Li ◽  
S. Fukatsu ◽  
Y. Shiraki ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Chemical Etching ◽  
Wet Chemical ◽  
Wet Chemical Etching
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