Incorporation of indium into ε-gallium oxide epitaxial thin films grown via mist chemical vapour deposition for bandgap engineering

CrystEngComm ◽  
2018 ◽  
Vol 20 (13) ◽  
pp. 1882-1888 ◽  
Author(s):  
H. Nishinaka ◽  
N. Miyauchi ◽  
D. Tahara ◽  
S. Morimoto ◽  
M. Yoshimoto

Epitaxial ε-gallium oxide (Ga2O3) thin films incorporated with In were successfully grown by mist chemical vapour deposition (CVD) on c-plane sapphire substrates for bandgap tuning.

1996 ◽  
Vol 279 (1-2) ◽  
pp. 115-118 ◽  
Author(s):  
G.A. Battiston ◽  
R. Gerbasi ◽  
M. Porchia ◽  
R. Bertoncello ◽  
F. Caccavale

RSC Advances ◽  
2021 ◽  
Vol 11 (36) ◽  
pp. 22199-22205
Author(s):  
Rachel L. Wilson ◽  
Thomas J. Macdonald ◽  
Chieh-Ting Lin ◽  
Shengda Xu ◽  
Alaric Taylor ◽  
...  

We describe CVD of nickel oxide (NiO) thin films using a new precursor [Ni(dmamp′)2], synthesised using a readily commercially available dialkylaminoalkoxide ligand (dmamp′), which is applied to synthesis of a hole transport-electron blocking layer.


2001 ◽  
Vol 389 (1-2) ◽  
pp. 34-42 ◽  
Author(s):  
J.P Holgado ◽  
J.P Espinós ◽  
F Yubero ◽  
A Justo ◽  
M Ocaña ◽  
...  

Vacuum ◽  
2021 ◽  
Vol 189 ◽  
pp. 110253
Author(s):  
Yujia Jiao ◽  
Qian Jiang ◽  
Junhua Meng ◽  
Jinliang Zhao ◽  
Zhigang Yin ◽  
...  

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