Synthesis, structural characterization and magnetic properties of ordered mesoporous Pr1−xCaxMnO3 thin films

CrystEngComm ◽  
2018 ◽  
Vol 20 (2) ◽  
pp. 245-250 ◽  
Author(s):  
Lidija Androš Dubraja ◽  
Di Wang ◽  
Torsten Brezesinski
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetic Properties ◽  
Block Copolymer ◽  
Structural Characterization ◽  
Thin Film Form ◽  
Ordered Mesoporous ◽  
Calcium Manganite ◽  
Film Form

Continuous mesoporous praseodymium calcium manganite was prepared in thin-film form using a block copolymer template.

Thin Film Photovoltaic Options – an Overview

1989 ◽  
Vol 149 ◽  
Author(s):  
Jack L. Stone
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
High Performance ◽  
Power Plants ◽  
High Efficiency ◽  
Cost Effective ◽  
Consumer Products ◽  
Large Area ◽  
Thin Film Form ◽  
Film Form

ABSTRACTSignificant deployment of the promising option of photovoltaics for energy will require cost-effective technologies that compete effectively with conventional sources. One such option utilizes thin films of a variety of photovoltaic materials. These thin films must be manufacturable in large quantities, and they must have high performance and acceptable reliability. Amorphous silicon (a-Si) was the first successfully demonstrated thin film to be widely adopted by industry. This material is already used to power a larger number of such consumer products as calculators, watches, and battery chargers. Recently, a-Si solar cells have been scaled up to large-area modules for power applications. Large fields of these modules have been deployed by utility companies for their evaluation. Polycrystalline thin films such as copper indium diselenide (CIS) and cadmium telluride (CdTe) have recently shown promise in following the path of a-Si. High-efficiency, large-area submodules have been successfully tested. By combining these materials in hybrid combinations, researchers have demonstrated much higher efficiencies. Even higher efficiencies have been demonstrated with more conventional materials such as silicon and gallium arsenide in thin-film form. Such devices have a high degree of acceptability because of their successful application for power uses in their non-thin-film form. Extensive examples are given to demonstrate the technical viability of these photovoltaic approaches for possible use in utility-scale power plants and in other near-term, highvalue markets.

scholarly journals Precise control of Jeff=12 magnetic properties in Sr2IrO4 epitaxial thin films by variation of strain and thin film thickness

2020 ◽  
Vol 102 (21) ◽  
Author(s):  
Stephan Geprägs ◽  
Björn Erik Skovdal ◽  
Monika Scheufele ◽  
Matthias Opel ◽  
Didier Wermeille ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetic Properties ◽  
Film Thickness ◽  
Epitaxial Thin Films ◽  
Thin Film Thickness ◽  
Precise Control

scholarly journals Thin film bi-epitaxy and transition characteristics of TiO2/TiN buffered VO2 on Si(100) substrates

MRS Advances ◽  
2016 ◽  
Vol 1 (37) ◽  
pp. 2635-2640 ◽  
Author(s):  
Adele Moatti ◽  
Reza Bayati ◽  
Srinivasa Rao Singamaneni ◽  
Jagdish Narayan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetic Properties ◽  
Frequency Factor ◽  
Misfit Strain ◽  
Buffer Layers ◽  
Intrinsic Defects ◽  
Domain Matching Epitaxy ◽  
Out Of Plane

ABSTRACTBi-epitaxial VO2 thin films with [011] out-of-plane orientation were integrated with Si(100) substrates through TiO2/TiN buffer layers. At the first step, TiN is grown epitaxially on Si(100), where a cube-on-cube epitaxy is achieved. Then, TiN was oxidized in-situ ending up having epitaxial r-TiO2. Finally, VO2 was deposited on top of TiO2. The alignment across the interfaces was stablished as VO2(011)║TiO2(110)║TiN(100)║Si(100) and VO2(110) /VO2(010)║TiO2(011)║TiN(112)║Si(112). The inter-planar spacing of VO2(010) and TiO2(011) equal to 2.26 and 2.50 Å, respectively. This results in a 9.78% tensile misfit strain in VO2(010) lattice which relaxes through 9/10 alteration domains with a frequency factor of 0.5, according to the domain matching epitaxy paradigm. Also, the inter-planar spacing of VO2(011) and TiO2(011) equals to 3.19 and 2.50 Å, respectively. This results in a 27.6% compressive misfit strain in VO2(011) lattice which relaxes through 3/4 alteration domains with a frequency factor of 0.57. We studied semiconductor to metal transition characteristics of VO2/TiO2/TiN/Si heterostructures and established a correlation between intrinsic defects and magnetic properties.

scholarly journals Deposition pressure-induced microstructure control and plasmonic property tuning in hybrid ZnO-AgxAu1-x thin films

2021 ◽  
Author(s):  
Robynne Lynne PALDI ◽  
Xing Sun ◽  
Xin Li Phuah ◽  
Juanjuan Lu ◽  
Xinghang Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Method ◽  
Hybrid Films ◽  
Deposition Pressure ◽  
Plasmonic Metamaterials ◽  
Film Form

Self-assembled oxide-metallic alloyed nanopillars as hybrid plasmonic metamaterials (e.g., ZnO-AgxAu1-x) in a thin film form are grown using a pulsed laser deposition method. The hybrid films were demonstrated to be...

scholarly journals Between single ion magnets and macromolecules: a polymer/transition metal-based semi-solid solution

2018 ◽  
Vol 9 (36) ◽  
pp. 7277-7286 ◽  
Author(s):  
Anna M. Majcher ◽  
Paweł Dąbczyński ◽  
Mateusz M. Marzec ◽  
Magdalena Ceglarska ◽  
Jakub Rysz ◽  
...  
Keyword(s):  
Thin Film ◽  
Solid Solution ◽  
Transition Metal ◽  
Thin Film Form ◽  
Bulk Solid ◽  
New Material ◽  
Semi Solid ◽  
Film Form

A new material combining polymers and magnetic relaxations both in the bulk solid solution and in the thin film form.

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