Facile synthesis and the phase transition mechanism of fluoridated hydroxyapatite with a hierarchical architecture

CrystEngComm ◽  
2017 ◽  
Vol 19 (48) ◽  
pp. 7298-7306 ◽  
Author(s):  
Liping Wang ◽  
Ming Wang ◽  
Yunli Wang ◽  
Yiran Shao ◽  
Yingchun Zhu
Keyword(s):  
Phase Transition ◽  
Crystal Growth ◽  
Orientation Relationship ◽  
Crystal Orientation ◽  
Growth Process ◽  
Hierarchical Architecture ◽  
Facile Synthesis ◽  
Fluoridated Hydroxyapatite ◽  
Transition Mechanism ◽  
Crystal Growth Process

The crystal growth process of FHA is investigated. The crystal orientation relationship is found to be [010]FHA//[001]DCPA and (001)FHA//(010)DCPA.

Experimental Verification of the Numerical Model for a CaF2 Crystal Growth Process

2002 ◽  
Vol 37 (1) ◽  
pp. 77-82 ◽  
Author(s):  
A. Molchanov ◽  
U. Hilburger ◽  
J. Friedrich ◽  
M. Finkbeiner ◽  
G. Wehrhan ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Numerical Model ◽  
Experimental Verification ◽  
Growth Process ◽  
Caf2 Crystal ◽  
Crystal Growth Process

Purification of organic compounds in high-quality crystal growth process

2000 ◽  
Vol 66 (2-3) ◽  
pp. 303-308 ◽  
Author(s):  
C Salati ◽  
G Mignoni ◽  
M Zha ◽  
L Zanotti ◽  
C Mucchino ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Organic Compounds ◽  
Growth Process ◽  
High Quality ◽  
Crystal Growth Process

Coupling of conductive, convective and radiative heat transfer in Czochralski crystal growth process

2002 ◽  
Vol 25 (4) ◽  
pp. 570-576 ◽  
Author(s):  
Andrzej J Nowak ◽  
Ryszard A Białecki ◽  
Adam Fic ◽  
Gabriel Wecel ◽  
Luiz C Wrobel ◽  
...  
Keyword(s):  
Heat Transfer ◽  
Crystal Growth ◽  
Radiative Heat Transfer ◽  
Growth Process ◽  
Radiative Heat ◽  
Czochralski Crystal Growth ◽  
Crystal Growth Process

Ion-Beam-Induced Epitaxy and Solute Segregation at the Si Crystal-Amorphous Interface

1988 ◽  
Vol 128 ◽  
Author(s):  
J. M. Poate ◽  
D. C. Jacobson ◽  
F. Priolo ◽  
Michael O. Thompson
Keyword(s):  
Crystal Growth ◽  
Growth Process ◽  
Ion Beam ◽  
Solute Segregation ◽  
Ion Beams ◽  
Temperature Range ◽  
Crystal Growth Process ◽  
Amorphous Si ◽  
And Diffusion ◽  
Diffusion Of Impurities

ABSTRACTSegregation and diffusion of impurities in amorphous Si during furnace and ion-beam-induced epitaxy will be discussed. The use of ion beams to enhance the crystal growth process has resulted in novel behavior for fast diffusers such as Au. Diffusion is enhanced in the temperature range 300–700 K with activation energies ∼0.3 eV. Segregation and trapping are analogous to behavior at liquid-solid interfaces

Sign in / Sign up

Export Citation Format

Share Document