Computational search for two-dimensional intrinsic half-metals in transition-metal dinitrides

2017 ◽  
Vol 5 (3) ◽  
pp. 727-732 ◽  
Author(s):  
Junyan Liu ◽  
Zhifeng Liu ◽  
Tielei Song ◽  
Xin Cui

A promising 2D material (1T-TaN2 monolayer) with intrinsic half-metallicity and ferromagnetism has been characterized by a first-principles computational search.

Author(s):  
Yanxia Wang ◽  
Xue Jiang ◽  
Yi Wang ◽  
Jijun Zhao

Exploring two-dimensional (2D) ferromagnetic materials with intrinsic Dirac half-metallicity is crucial for the development of next-generation spintronic devices. Based on first-principles calculations, here we propose a simple valence electron-counting rule...


Author(s):  
Cheng Tang ◽  
Lei Zhang ◽  
Yalong Jiao ◽  
Chunmei Zhang ◽  
Stefano Sanvito ◽  
...  

Polar half-metals, possessing both polarity and half-metallicity, may have potential as media in novel spintronic quantum devices, but they have never been reported in the two-dimensional (2D) form. By combining...


Author(s):  
Daoxiong Wu ◽  
Haifeng Lv ◽  
Zhiwen Zhuo ◽  
Xingxing Li ◽  
Xiaojun Wu ◽  
...  

2021 ◽  
Vol 23 (14) ◽  
pp. 8784-8791
Author(s):  
Qingling Meng ◽  
Ling Zhang ◽  
Jinge Wu ◽  
Shuwei Zhai ◽  
Xiamin Hao ◽  
...  

Theoretical screening of transition metal atoms anchored on monolayer C9N4 as highly stable, catalytically active and selective single-atom catalysts for nitrogen fixation.


Author(s):  
Fang Wu ◽  
Min Dou ◽  
Huan Li ◽  
Yunfei Liu ◽  
Qingnian Yao ◽  
...  

It is important to predict new two-dimensional (2D) ferromagnetic materials for next-generation information storage media. However, discovered 2D ferromagnetic materials are still rare. Here, we explored that 2D transition metal...


Author(s):  
Jiao Yu ◽  
Caijuan Xia ◽  
Zhengyang Hu ◽  
jianping Sun ◽  
Xiaopeng Hao ◽  
...  

With in-plane heterojunction contacts between semiconducting 2H phase (as channel) and the metallic 1T' phase (as electrode), the two-dimensional (2D) transition metal chalcogenides (TMDs) field-effect transistors (FETs) have received much...


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