scholarly journals Lu2CaMg2(Si1−xGex)3O12:Ce3+ solid-solution phosphors: bandgap engineering for blue-light activated afterglow applicable to AC-LED

2016 ◽  
Vol 4 (43) ◽  
pp. 10329-10338 ◽  
Author(s):  
Hang Lin ◽  
Bo Wang ◽  
Qingming Huang ◽  
Feng Huang ◽  
Ju Xu ◽  
...  
Keyword(s):  
Solid Solution ◽  
Blue Light ◽  
Bandgap Engineering ◽  
Ac Led

“Bandgap engineering” is applied to design a new kind of Lu2CaMg2(Si1−xGex)3O12:Ce3+ solid-solution phosphor applicable for low flickering AC-LED.

Limits of Analytical Accuracy for Two Critical Semiconductors Systems: (Al, Ga)(As, P) and (In, Ga)(As, P)

1998 ◽  
Vol 4 (S2) ◽  
pp. 226-227
Author(s):  
John T. Armstrong
Keyword(s):  
Solid Solution ◽  
Quality Control ◽  
Quantum Wells ◽  
Semiconductor Materials ◽  
Multilayer Coatings ◽  
Bandgap Engineering ◽  
X Ray ◽  
Analytical Accuracy ◽  
Commercially Important

Among the more important semiconductor materials, with commercially important applications in microelectronics, photonics, and nanodevice development are alloys in the system GaP-GaAs-AlAs- InAs (e.g., 1). These components have extensive regions of solid solution. With the wide variety of phases that can be grown in this system, it is possible to “tailor” heterojunctions that have desired band offsets or quantum wells that have a given shape of confinement potential, which is the basis of “bandgap engineering” (e.g., 2-4). In order to characterize the properties of these phases and maintain quality control in the manufacturing of devices utilizing these phases, it is critical to be able to perform accurate determinations of their compositions. This can be especially difficult, since many of the applications utilizing these phases involve micro- or nano-devices or thin multilayer coatings. In terms of the spatial analysis requirements, electron microbeam x-ray microanalysis is ideally suited for characterization of such specimens.

Pseudobinary Solid-Solution: An Alternative Way for the Bandgap Engineering of Semiconductor Nanowires in the Case of GaP-ZnSe

2015 ◽  
Vol 25 (17) ◽  
pp. 2543-2551 ◽  
Author(s):  
Wenjin Yang ◽  
Baodan Liu ◽  
Bing Yang ◽  
Jianyu Wang ◽  
Takashi Sekiguchi ◽  
...  
Keyword(s):  
Solid Solution ◽  
Semiconductor Nanowires ◽  
Bandgap Engineering

Crystal structure, tunable emission and applications of Ca1−xAl1−xSi1+xN3−xOx:RE (x = 0–0.22, RE = Ce3+, Eu2+) solid solution phosphors for white light-emitting diodes

2016 ◽  
Vol 4 (47) ◽  
pp. 11219-11230 ◽  
Author(s):  
Shuxing Li ◽  
Le Wang ◽  
Qiangqiang Zhu ◽  
Daiming Tang ◽  
Xuejian Liu ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Solid Solution ◽  
White Light ◽  
Light Emitting Diodes ◽  
Bandgap Engineering ◽  
Luminous Efficacy ◽  
Light Emitting ◽  
White Light Emitting Diodes ◽  
Tunable Emission

The designed Ca1−xAl1−xSi1+xN3−xOx:Eu2+/Ce3+red or yellow phosphors by structure and bandgap engineering afford wLEDs with high color rendition and luminous efficacy.

NiAl precipitation in Fe-12w/o Cr-5w/o Ni-4w/o Al

1983 ◽  
Vol 41 ◽  
pp. 202-203
Author(s):  
L.E. Murr ◽  
J.S. Dunning ◽  
S. Shankar
Keyword(s):  
Solid Solution ◽  
Stainless Steel ◽  
Stainless Steels ◽  
Alloy Composition ◽  
Chromium Content ◽  
Scale Up ◽  
Optical Metallography ◽  
Property Evaluation ◽  
310 Stainless Steel ◽  
Microstructural Studies

Aluminum additions to conventional 18Cr-8Ni austenitic stainless steel compositions impart excellent resistance to high sulfur environments. However, problems are typically encountered with aluminum additions above about 1% due to embrittlement caused by aluminum in solid solution and the precipitation of NiAl. Consequently, little use has been made of aluminum alloy additions to stainless steels for use in sulfur or H2S environments in the chemical industry, energy conversion or generation, and mineral processing, for example.A research program at the Albany Research Center has concentrated on the development of a wrought alloy composition with as low a chromium content as possible, with the idea of developing a low-chromium substitute for 310 stainless steel (25Cr-20Ni) which is often used in high-sulfur environments. On the basis of workability and microstructural studies involving optical metallography on 100g button ingots soaked at 700°C and air-cooled, a low-alloy composition Fe-12Cr-5Ni-4Al (in wt %) was selected for scale up and property evaluation.

Solid Solution Effects and Deformation Micros trueture of Shock-Loaded Iron Manganese Alloys

1970 ◽  
Vol 28 ◽  
pp. 420-421
Author(s):  
A. Christou ◽  
J. V. Foltz ◽  
N. Brown
Keyword(s):  
Solid Solution ◽  
Shock Loading ◽  
High Strain ◽  
Local Stress ◽  
Strain Rates ◽  
Local Stress Concentration ◽  
Bcc Metals ◽  
Manganese Alloys ◽  
Iron Manganese ◽  
Transmission Microscope

In general, all BCC transition metals have been observed to twin under appropriate conditions. At the present time various experimental reports of solid solution effects on BCC metals have been made. Indications are that solid solution effects are important in the formation of twins. The formation of twins in metals and alloys may be explained in terms of dislocation mechanisms. It has been suggested that twins are nucleated by the achievement of local stress-concentration of the order of 15 to 45 times the applied stress. Prietner and Leslie have found that twins in BCC metals are nucleated at intersections of (110) and (112) or (112) and (112) type of planes.In this paper, observations are reported of a transmission microscope study of the iron manganese series under conditions in which twins both were and were not formed. High strain rates produced by shock loading provided the appropriate deformation conditions. The workhardening mechanisms of one alloy (Fe - 7.37 wt% Mn) were studied in detail.

Fine Microstructure of a Mechanically Alloyed Oxide Dispersion Strengthened Nickel-Base Superalloy

1977 ◽  
Vol 35 ◽  
pp. 298-299
Author(s):  
Jordi Marti ◽  
Timothy E. Howson ◽  
David Kratz ◽  
John K. Tien
Keyword(s):  
Solid Solution ◽  
Volume Fraction ◽  
Stress Rupture ◽  
Oxide Dispersion Strengthened ◽  
Solid Solution Alloy ◽  
Oxide Dispersion ◽  
Creep And Stress Rupture ◽  
Mechanically Alloyed ◽  
Fine Microstructure ◽  
Nickel Base

The previous paper briefly described the fine microstructure of a mechanically alloyed oxide dispersion strengthened nickel-base solid solution. This note examines the fine microstructure of another mechanically alloyed system. This alloy differs from the one described previously in that it is more generously endowed with coherent precipitate γ forming elements A1 and Ti and it contains a higher volume fraction of the finely dispersed Y2O3 oxide. An interesting question to answer in the comparative study of the creep and stress rupture of these two ODS systems is the role of the precipitate γ' in the mechanisms of creep and stress rupture in alloys already containing oxide dispersoids.The nominal chemical composition of this alloy is Ni - 20%Cr - 2.5%Ti - 1.5% A1 - 1.3%Y203 by weight. The system receives a three stage heat treatment-- the first designed to produce a coarse grain structure similar to the solid solution alloy but with a smaller grain aspect ratio of about ten.

The Precipitation of Si in AlCuSi Thin Films

1973 ◽  
Vol 31 ◽  
pp. 34-35 ◽  
Author(s):  
R. M. Anderson
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Heat Treatment ◽  
Solid Solution ◽  
Integrated Circuit ◽  
Copper Film ◽  
Solution Concentration ◽  
X Ray ◽  
Silicon Thin Films ◽  
Before And After

Aluminum-copper-silicon thin films have been considered as an interconnection metallurgy for integrated circuit applications. Various schemes have been proposed to incorporate small percent-ages of silicon into films that typically contain two to five percent copper. We undertook a study of the total effect of silicon on the aluminum copper film as revealed by transmission electron microscopy, scanning electron microscopy, x-ray diffraction and ion microprobe techniques as a function of the various deposition methods.X-ray investigations noted a change in solid solution concentration as a function of Si content before and after heat-treatment. The amount of solid solution in the Al increased with heat-treatment for films with ≥2% silicon and decreased for films <2% silicon.

Precipitation in Al + 4% Cu Epitaxial Films

1968 ◽  
Vol 26 ◽  
pp. 384-385
Author(s):  
S. Herd ◽  
S. M. Mader
Keyword(s):  
Solid Solution ◽  
Bulk Material ◽  
Epitaxial Films ◽  
Detectable Change ◽  
Cu Films ◽  
Solution Treated ◽  
Single Crystal Films ◽  
Crystal Films ◽  
Diffraction Patterns ◽  
Deposited Films

Single crystal films in (001) orientation, about 1500 Å thick, were produced by R-F sputtering of Al + 4 wt % Cu onto cleaved KCl at 150°C substrate temperature. The as-deposited films contained numerous θ-CuAl2 particles (C16 structure) about 0.1μ in size. They were transferred onto Mo screens, solution treated and rapidly cooled (within about ½ min) so as to retain a homogeneous solid solution. Subsequently, the films were aged in vacuum at various temperatures in order to induce precipitation and to compare structures and morphologies of precipitate particles in Al-Cu films with those found in age hardened bulk material.Aging for 3 weeks at 60°C or 48 hrs at 100°C did not produce any detectable change in high resolution micrographs or diffraction patterns. In this range Guinier-Preston zones (GP) form in quenched bulk material. The absence of GP in the present experiments in this aging range is perhaps due to the cooling rate employed, which might be more equivalent to an aged and reverted bulk material than to a quenched one.

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