Bifunctional resistive switching behavior in an organolead halide perovskite based Ag/CH3NH3PbI3−xClx/FTO structure

2016 ◽  
Vol 4 (33) ◽  
pp. 7824-7830 ◽  
Author(s):  
Eunji Yoo ◽  
Miaoqiang Lyu ◽  
Jung-Ho Yun ◽  
Chijung Kang ◽  
Youngjin Choi ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Halide Perovskite ◽  
Organolead Halide ◽  
Switching Memory

A simple organolead perovskite based device Ag/CH3NH3PbI3−xClx/FTO exhibits both digital and analog switching memory features.

The Study of Au/TiO2/Au Resistive Switching Memory with Crosspoint Structure

2013 ◽  
Vol 652-654 ◽  
pp. 659-663 ◽  
Author(s):  
An Yan ◽  
Gang Liu ◽  
Chao Zhang ◽  
Liang Fang
Keyword(s):  
Resistive Switching ◽  
Good Stability ◽  
Switching Behavior ◽  
Experimental Result ◽  
Resistive Switching Behavior ◽  
Bipolar Resistive Switching ◽  
Resistive Switching Memory ◽  
Switching Memory

This paper presets a process of fabrication and measurements of Au/TiO2/Au resistive switching memory. The device was fabricated using crosspoint structure, and the electrode width and TiO2 film of which are 1 µm and 50 nm. According to our experimental result, resistive switching cells exhibit good stability and reliability with bipolar resistive switching behavior.

Single CuOx Nanowire Memristor: Forming-Free Resistive Switching Behavior

2014 ◽  
Vol 6 (19) ◽  
pp. 16537-16544 ◽  
Author(s):  
Kai-De Liang ◽  
Chi-Hsin Huang ◽  
Chih-Chung Lai ◽  
Jian-Shiou Huang ◽  
Hung-Wei Tsai ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Switching Behavior ◽  
Resistive Switching Behavior

Detection of resistive switching behavior based on the Al 2 O 3 /ZnO/Al 2 O 3 structure with alumina buffers

2017 ◽  
Vol 623 ◽  
pp. 8-13 ◽  
Author(s):  
Q. Qiao ◽  
D. Xu ◽  
Y.W. Li ◽  
J.Z. Zhang ◽  
Z.G. Hu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Behavior Based

scholarly journals Effects of the thickness on resistive switching characteristics of CrOx thin films

2016 ◽  
Vol 19 (2) ◽  
pp. 92-100
Author(s):  
Ngoc Kim Pham ◽  
Thang Bach Phan ◽  
Vinh Cao Tran
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Resistive Switching ◽  
High Reliability ◽  
Switching Behavior ◽  
Ftir Analysis ◽  
Resistive Switching Behavior ◽  
Bipolar Resistive Switching ◽  
Structure Surface ◽  
Switching Characteristics

In this study, we have investigated influences of the thickness on the structure, surface morphology and resistive switching characteristics of CrOx thin films prepared by using DC reactive sputtering technique. The Raman and FTIR analysis revealed that multiphases including Cr2O3, CrO2, Cr8O21... phases coexist in the microstructure of CrOx film. It is noticed that the amount of stoichiometric Cr2O3 phase increased significantly as well as the surface morphology were more visible with less voids and more densed particles with larger thickness films. The Ag/CrOx/FTO devices exhibited bipolar resistive switching behavior and high reliability. The resistive switching ratio has decreased slightly with the thickness increments and was best achieved at CrOx – 100 nm devices.

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