scholarly journals n-Type doped transparent conducting binary oxides: an overview

2016 ◽  
Vol 4 (29) ◽  
pp. 6946-6961 ◽  
Author(s):  
Sebastian C. Dixon ◽  
David O. Scanlon ◽  
Claire J. Carmalt ◽  
Ivan P. Parkin
Keyword(s):  
Experimental Study ◽  
Binary Oxide ◽  
Oxide Semiconductors ◽  
Binary Oxides ◽  
Transparent Conducting ◽  
Recent Developments

A review covering recent developments in computational and experimental study in the n-type doping of binary oxide semiconductors for transparent conducting applications.

Towards optical hyperdoping of binary oxide semiconductors

2013 ◽  
Vol 113 (14) ◽  
pp. 143512 ◽  
Author(s):  
A. Schneider ◽  
K. Sebald ◽  
A. Dev ◽  
K. Frank ◽  
A. Rosenauer ◽  
...  
Keyword(s):  
Binary Oxide ◽  
Oxide Semiconductors

Thermodynamic stability of binary oxides in contact with silicon

1996 ◽  
Vol 11 (11) ◽  
pp. 2757-2776 ◽  
Author(s):  
K. J. Hubbard ◽  
D. G. Schlom
Keyword(s):  
Rare Earth ◽  
Dynamic Stability ◽  
Thermodynamic Stability ◽  
Thermodynamic Data ◽  
Alkaline Earth ◽  
Binary Oxide ◽  
Sufficient Data ◽  
Comprehensive Investigation ◽  
Oxide Interfaces ◽  
Binary Oxides

Using tabulated thermodynamic data, a comprehensive investigation of the thermo-dynamic stability of binary oxides in contact with silicon at 1000 K was conducted. Reactions between silicon and each binary oxide at 1000 K, including those involving ternary phases, were considered. Sufficient data exist to conclude that all binary oxides except the following are thermodynamically unstable in contact with silicon at 1000 K: Li2O, most of the alkaline earth oxides (BeO, MgO, CaO, and SrO), the column IIIB oxides (Sc2O3, Y2O3, and Re2O3, where Re is a rare earth), ThO2, UO2, ZrO2, HfO2, and Al2O3. Of these remaining oxides, sufficient data exist to conclude that BeO, MgO, and ZrO2 are thermodynamically stable in contact with silicon at 1000 K. Our results are consistent with reported investigations of silicon/binary oxide interfaces and identify candidate materials for future investigations.

What Are the Recent Developments in the Experimental Study of Staff Utilization

1958 ◽  
Vol 42 (237) ◽  
pp. 273-290
Author(s):  
Lloyd S. Michael ◽  
Clarence A. Brock ◽  
Kenneth K. Hansen ◽  
Charles Romine ◽  
Alfred L. Pirtle ◽  
...  
Keyword(s):  
Experimental Study ◽  
Recent Developments

scholarly journals ‘Exotic’ quantum effects in the laboratory?

2008 ◽  
Vol 366 (1877) ◽  
pp. 2895-2903 ◽  
Author(s):  
Ralf Schützhold
Keyword(s):  
Experimental Study ◽  
Hawking Radiation ◽  
Particle Creation ◽  
Quantum Effects ◽  
Unruh Effect ◽  
Recent Developments

This article provides a brief (non-exhaustive) review of some recent developments regarding the theoretical and possibly experimental study of ‘exotic’ quantum effects in the laboratory with special emphasis on cosmological particle creation, Hawking radiation and the Unruh effect.

scholarly journals Photocatalytic Degradation of Diclofenac Using Al2O3-Nd2O3 Binary Oxides Prepared by the Sol-Gel Method

Materials ◽  
2020 ◽  
Vol 13 (6) ◽  
pp. 1345 ◽  
Author(s):  
José Eduardo Casillas ◽  
Jorge Campa-Molina ◽  
Francisco Tzompantzi ◽  
Gregorio Guadalupe Carbajal Arízaga ◽  
Alejandro López-Gaona ◽  
...  
Keyword(s):  
Band Gap ◽  
Uv Light ◽  
Light Exposure ◽  
Sol Gel ◽  
Reaction Times ◽  
Binary Oxide ◽  
Semiconductor Materials ◽  
Electron Hole ◽  
Binary Oxides ◽  
Sol Gel Synthesis

This paper reports the sol-gel synthesis of Al2O3-Nd2O3 (Al-Nd-x; x = 5%, 10%, 15% and 25% of Nd2O3) binary oxides and the photodegradation of diclofenac activated by UV light. Al-Nd-based catalysts were analyzed by N2 physisorption, XRD, TEM, SEM, UV-Vis and PL spectroscopies. The inclusion of Nd2O3 in the aluminum oxide matrix in the 10–25% range reduced the band gap energies from 3.35 eV for the γ-Al2O3 to values as low as 3.13–3.20 eV, which are typical of semiconductor materials absorbing in the UV region. γ-Al2O3 and Al-Nd-x binary oxides reached more than 92.0% of photoconverted diclofenac after 40 min of reaction. However, the photocatalytic activity in the diclofenac degradation using Al-Nd-x with Nd2O3 contents in the range 10–25% was improved with respect to that of γ-Al2O3 at short reaction times. The diclofenac photoconversion using γ-Al2O3 was 63.0% at 10 min of UV light exposure, whereas Al-Nd-15 binary oxide reached 82.0% at this reaction time. The rate constants determined from the kinetic experiments revealed that the highest activities in the aqueous medium were reached with the catalysts with 15% and 25% of Nd2O3, and these compounds presented the lowest band gap energies. The experimental results also demonstrated that Nd2O3 acts as a separator of charges favoring the decrease in the recombination rate of electron-hole pairs.

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