scholarly journals Bacterial viability on chemically modified silicon nanowire arrays

2016 ◽  
Vol 4 (18) ◽  
pp. 3104-3112 ◽  
Author(s):  
A. Susarrey-Arce ◽  
I. Sorzabal-Bellido ◽  
A. Oknianska ◽  
F. McBride ◽  
A. J. Beckett ◽  
...  
Keyword(s):  
Chemical Modification ◽  
Silicon Nanowires ◽  
Silicon Nanowire ◽  
Nanowire Arrays ◽  
Chlorhexidine Digluconate ◽  
Bacterial Viability ◽  
Chemically Modified ◽  
Silicon Nanowire Arrays

Multi-functional silicon nanowires (SiNWs) arrays: (I) nanostructure topography in the form of SiNWs, (II) covalent chemical modification with APTES and (III) incorporation of chlorhexidine digluconate.

Synthesis of Silicon Nanowire Arrays by Metal-Assisted Chemical Etching in Aqueous NH4HF2 Solution

2012 ◽  
Vol 21 ◽  
pp. 109-115 ◽  
Author(s):  
S. Naama ◽  
T. Hadjersi ◽  
G. Nezzal ◽  
L. Guerbous
Keyword(s):  
Silicon Nanowires ◽  
Chemical Etching ◽  
Silicon Nanowire ◽  
Nanowire Arrays ◽  
Etching Time ◽  
Silicon Nanowire Arrays ◽  
Peak Intensity ◽  
One Step ◽  
Etching Parameters ◽  
P Type

One-step metal-assisted electroless chemical etching of p-type silicon substrate in NH4HF2/AgNO3 solution was investigated. The effect of different etching parameters including etching time, temperature, AgNO3 concentration and NH4HF2 concentration were investigated. The etched layers formed were investigated by scanning electron microscopy (SEM) and Photoluminescence. It was found that the etched layer was formed by well-aligned silicon nanowires. It is noted that their density and length strongly depend on etching parameters. Room temperature photoluminescence (PL) from etched layer was observed. It was observed that PL peak intensity increases significantly with AgNO3 concentration.

Field-Effect Transistors Based on Silicon Nanowire Arrays: Effect of the Good and the Bad Silicon Nanowires

2012 ◽  
Vol 4 (8) ◽  
pp. 4251-4258 ◽  
Author(s):  
Bin Wang ◽  
Thomas Stelzner ◽  
Rawi Dirawi ◽  
Ossama Assad ◽  
Nisreen Shehada ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Silicon Nanowire ◽  
Nanowire Arrays ◽  
Silicon Nanowire Arrays

Fabrication of Large-Area Silicon Nanowire Arrays Based on Electroless Metal Deposition

2011 ◽  
Vol 194-196 ◽  
pp. 598-601
Author(s):  
Xuan Liu ◽  
Li Jie Zhao ◽  
Ping Feng
Keyword(s):  
Reaction Time ◽  
Silicon Nanowires ◽  
Silicon Nanowire ◽  
Metal Deposition ◽  
Wire Diameter ◽  
Nanowire Arrays ◽  
Metal Particles ◽  
Large Area ◽  
Average Growth ◽  
Silicon Nanowire Arrays

Electroless metal deposition is a simple, low-cost and effective method for fabricating silicon nanowire arrays and has been used widely in micro electromechanical industry. In this paper, large-area silicon nanowire arrays are prepared successfully with mixed AgNO3and HF solution by this method at normal temperature and pressure. It has been proved the best equality of silicon nanowires can be obtained at the concentration ratio of 0.02 mol/l: 5mol/l for AgNO3and HF and 1h reaction time. The influence of nano metal particles on the growth, the wire diameter, the distribution and the array of silicon nanowires are analyzed. Experimental results show the distribution and wire diameter of silicon nanowires can be controlled effectively by nano metal particles deposited on silicon wafers. The length of silicon nanowires increases with the reaction time and the average growth velocity is predicted to be 0.5～0.7μm/min. The equality of silicon nanowires with nano Au particles is better than those with nano Pt particles. The reaction mechanism of preparing large-area silicon nanowire arrays is analyzed as the result of the deoxidization of silver ion and the removal of the oxidized silicon solution by reacting with HF.

Well incorporation of carbon nanodots with silicon nanowire arrays featuring excellent photocatalytic performances

2017 ◽  
Vol 19 (19) ◽  
pp. 11786-11792 ◽  
Author(s):  
Chia-Yun Chen ◽  
Po-Hsuan Hsiao ◽  
Ta-Cheng Wei ◽  
Ting-Chen Chen ◽  
Chien-Hsin Tang
Keyword(s):  
Silicon Nanowires ◽  
High Efficiency ◽  
Silicon Nanowire ◽  
Broad Band ◽  
Nanowire Arrays ◽  
Carbon Nanodots ◽  
Silicon Nanowire Arrays ◽  
Photocatalytic Performances ◽  
Fluorescent Carbon Nanodots ◽  
Fluorescent Carbon

Broad-band and high efficiency photocatalytic systems were demonstrated through the incorporation of silicon nanowires with highly fluorescent carbon nanodots.

scholarly journals A Novel Top-Down Fabrication Process for Vertically-Stacked Silicon-Nanowire Array

2020 ◽  
Vol 10 (3) ◽  
pp. 1146 ◽  
Author(s):  
Kangil Kim ◽  
Jae Keun Lee ◽  
Seung Ju Han ◽  
Sangmin Lee
Keyword(s):  
Silicon Nanowires ◽  
Silicon Nanowire ◽  
Nanowire Array ◽  
Nanowire Arrays ◽  
Fabrication Method ◽  
Top Down ◽  
Silicon Nanowire Arrays ◽  
Sensing Applications ◽  
Silicon Nanowire Array ◽  
Cross Sectional Dimension

Silicon nanowires are widely used for sensing applications due to their outstanding mechanical, electrical, and optical properties. However, one of the major challenges involves introducing silicon-nanowire arrays to a specific layout location with reproducible and controllable dimensions. Indeed, for integration with microscale structures and circuits, a monolithic wafer-level process based on a top-down silicon-nanowire array fabrication method is essential. For sensors in various electromechanical and photoelectric applications, the need for silicon nanowires (as a functional building block) is increasing, and thus monolithic integration is highly required. In this paper, a novel top-down method for fabricating vertically-stacked silicon-nanowire arrays is presented. This method enables the fabrication of lateral silicon-nanowire arrays in a vertical direction, as well as the fabrication of an increased number of silicon nanowires on a finite dimension. The proposed fabrication method uses a number of processes: photolithography, deep reactive-ion etching, and wet oxidation. In applying the proposed method, a vertically-aligned silicon-nanowire array, in which a single layer consists of three vertical layers with 20 silicon nanowires, is fabricated and analyzed. The diamond-shaped cross-sectional dimension of a single silicon nanowire is approximately 300 nm in width and 20 μm in length. The developed method is expected to result in highly-sensitive, reproducible, and low-cost silicon-nanowire sensors for various biomedical applications.

Fabrication and Electrical Characterization of Silicon Nanowire Arrays

2004 ◽  
Vol 832 ◽  
Author(s):  
Sarah M. Dilts ◽  
Ahmad Mohmmad ◽  
Kok-Keong Lew ◽  
Joan M. Redwing ◽  
Suzanne E. Mohney
Keyword(s):  
Silicon Nanowires ◽  
Silicon Nanowire ◽  
Electrical Contact ◽  
Electrical Characterization ◽  
Nanowire Arrays ◽  
Silicon Nanowire Arrays ◽  
Alumina Membranes ◽  
Boron Doped ◽  
Doped Silicon ◽  
Vls Growth

ABSTRACTHigh density boron-doped silicon nanowire arrays were fabricated within the pores of anodized alumina membranes via vapor-liquid-solid (VLS) growth Anodized alumina membranes with a nominal pore diameter of 200 nm served as templates for the sequential electrodeposition of silver, cobalt, and gold which served as the backside electrical contact, ohmic contact metal and catalyst metal for VLS growth, respectively. Boron-doped silicon nanowires were then synthesized within the pores by VLS growth using silane (SiH4) and trimethylboron (TMB) gas sources. Arrays of Al dots were deposited on the top surface of the membrane after nanowire growth. A series of samples was prepared with different SiNW lengths and boron doping levels. Two point probe measurements were used to measure the I-V characteristics of the silicon nanowire arrays before and after annealing. Nanowire resistivity and contact resistance were determined from plots of resistance versus nanowire length. The resistivity of the SiNW was observed to decrease with the addition of TMB during growth.

Constructing film composites of silicon nanowires@CdS quantum dot arrays with ameliorated photocatalytic performance

2018 ◽  
Vol 42 (17) ◽  
pp. 14096-14103 ◽  
Author(s):  
Xin Lin ◽  
Shao-Hai Li ◽  
Kang-Qiang Lu ◽  
Zi-Rong Tang ◽  
Yi-Jun Xu
Keyword(s):  
Quantum Dot ◽  
Silicon Nanowires ◽  
Photocatalytic Performance ◽  
Silicon Nanowire ◽  
Nanowire Arrays ◽  
Type Silicon ◽  
Silicon Nanowire Arrays ◽  
Cds Quantum Dot ◽  
P Type ◽  
Film Composites

The film composites of n-type CdS QD decorated p-type silicon nanowire arrays are assembled toward H2 evolution with improved photoactivity and photostability.

Fabrication of Silicon Nanowires by Electroless Etching for Thermoelectric Application

2013 ◽  
Vol 652-654 ◽  
pp. 642-646 ◽  
Author(s):  
Hsin Luen Tsai
Keyword(s):  
Silicon Nanowires ◽  
Power Output ◽  
Silicon Nanowire ◽  
Solution Concentration ◽  
Nanowire Arrays ◽  
Thermoelectric Device ◽  
Etching Time ◽  
Electroless Etching ◽  
Silicon Nanowire Arrays ◽  
Chip Size

The fabrication procedure of silicon nanowire thermoelectric device has been developed based on the electroless etching method. Under a fixed etching solution concentration ratio and the etching reaction temperature, silicon nanowire arrays of different lengths manufactured at different etching time were investigated. The longer etching time results in the longer nanowire length. The silicon nanowire arrays were utilized to produce a silicon nanowire thermoelectric device. The I-V characteristics of the present SiNWs thermoelectric device were recorded under different heating temperatures, and the power outputs of silicon nanowire thermoelectric devices were calculated. The longer the silicon nanowire thermoelectric device lines, the greater the power output of thermoelectric device is. The SiNWs TED power output in the present study ranges from 1.62 to 7.2 nano-Watt with the chip size 2×2 cm2 while the applied temperature at 150 °C.

Unravelling the strain relaxation processes in silicon nanowire arrays by X-ray diffraction

2019 ◽  
Vol 52 (5) ◽  
pp. 1077-1086 ◽  
Author(s):  
Cosmin Romanitan ◽  
Mihaela Kusko ◽  
Marian Popescu ◽  
Pericle Varasteanu ◽  
Antonio Radoi ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Silicon Nanowire ◽  
Strain Relaxation ◽  
Grazing Incidence ◽  
Nanowire Arrays ◽  
Structural Defects ◽  
Relaxation Processes ◽  
X Ray Diffraction ◽  
X Ray ◽  
Silicon Nanowire Arrays

Investigations performed on silicon nanowires of different lengths by scanning electron microscopy revealed coalescence processes in longer nanowires. Using X-ray diffraction (XRD), it was found that the shape of the pole figure in reciprocal space is ellipsoidal. This is the signature of lattice defects generated by the relaxation of the strain concentrated in the coalescence regions. This observation is strengthened by the deviation of the XRD peaks from Gaussianity and the appearance of the acoustic phonon mode in the Raman spectrum. It implies that bending, torsion and structural defects coexist in the longer nanowires. To separate these effects, a grazing-incidence XRD technique was conceived which allows the nanowire to be scanned along its entire length. Both ω and φ rocking curves were recorded, and their shapes were used to extract the bending and torsion profiles, respectively, along the nanowire length. Dips were found in both profiles of longer nanowires, while they are absent from shorter ones, and these dips correspond to the regions where both bending and torsion relax. The energy dissipated in the nanowires, which tracks the bending and torsion profiles, has been used to estimate the emergent dislocation density in nanowire arrays.

Vertical-Aligned Silicon Nanowire Arrays with Strong Photoluminescence Fabricated by Metal-Assisted Electrochemical Etching

2020 ◽  
Vol 15 (1) ◽  
pp. 127-135
Author(s):  
Dao Tran Cao ◽  
Cao Tuan Anh ◽  
Luong Truc Quynh Ngan
Keyword(s):  
Silicon Nanowires ◽  
Chemical Etching ◽  
Silicon Oxide ◽  
Electrochemical Etching ◽  
Silicon Nanowire ◽  
Oxide System ◽  
Nanowire Arrays ◽  
Photoluminescence Intensity ◽  
Silicon Nanowire Arrays ◽  
Silicon Nanocrystallites

Metal-assisted chemical etching of silicon is a commonly used method to fabricate vertical aligned silicon nanowire arrays. In this report we show that if in the above method the chemical etching is replaced by the electrochemical one, we can also produce silicon nanowire arrays, but with a special characteristic-extremely strong photoluminescence. Further research showed that the huge photoluminescence intensity of the silicon nanowire arrays made by metal-assisted electrochemical etching is related to the anodic oxidation of the silicon nanowires which has occurred during the electrochemical etching. It is most likely that the luminescence of the silicon nanowire arrays made with metal-assisted electrochemical etching is the luminescence of silicon nanocrystallites (located on the surface of silicon nanowire fibers) embedded in a silicon oxide matrix, similar to that in a silicon rich oxide system.

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