Improved performance of inverted planar perovskite solar cells with F4-TCNQ doped PEDOT:PSS hole transport layers

2017 ◽  
Vol 5 (12) ◽  
pp. 5701-5708 ◽  
Author(s):  
Dongyang Liu ◽  
Yong Li ◽  
Jianyu Yuan ◽  
Qiuming Hong ◽  
Guozheng Shi ◽  
...  
Keyword(s):  
Solar Cells ◽  
Current Density ◽  
Open Circuit Voltage ◽  
Perovskite Solar Cells ◽  
Open Circuit ◽  
Hole Transport ◽  
Hole Transport Layers ◽  
Improved Performance

Simultaneously increased current density and open circuit voltage were achieved through doping F4-TCNQ into PEDOT:PSS in inverted perovskite solar cells.

p-Doping of organic hole transport layers in p–i–n perovskite solar cells: correlating open-circuit voltage and photoluminescence quenching

2019 ◽  
Vol 7 (32) ◽  
pp. 18971-18979 ◽  
Author(s):  
Tian Du ◽  
Weidong Xu ◽  
Matyas Daboczi ◽  
Jinhyun Kim ◽  
Shengda Xu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Open Circuit Voltage ◽  
Perovskite Solar Cells ◽  
Open Circuit ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
Photoluminescence Quenching ◽  
Hole Transport Layers

Reduction in p-doping of the organic hole transport layer (HTL) leads to substantial improvements in PV performance in planar p–i–n perovskite solar cells.

Optical Simulation and Investigation of the Effect of Hysteresis on the Perovskite Solar Cells

NANO ◽  
2019 ◽  
Vol 14 (10) ◽  
pp. 1950127 ◽  
Author(s):  
Farhad Jahantigh ◽  
S. M. Bagher Ghorashi
Keyword(s):  
Grain Size ◽  
Solar Cells ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Perovskite Solar Cells ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer

Perovskite solar cells have recently been considered to be an auspicious candidate for the advancement of future photovoltaic research. A power conversion efficiency (PCE) as high as 22% has been reported to be reached, which can be obtained through an inexpensive and high-throughput solution process. Modeling and simulation of these cells can provide deep insights into their fundamental mechanism of performance. In this paper, two different perovskite solar cells are designed by using COMSOL Multiphysics to optimize the thickness of each layer and the overall thickness of the cell. Electric potential, electron and hole concentrations, generation rate, open-circuit voltage, short-circuit current and the output power were calculated. Finally, PCEs of 20.7% and 26.1% were predicted. Afterwards, according to the simulation results, the role of the hole transport layer (HTL) was investigated and the optimum thickness of the perovskite was measured to be 200[Formula: see text]nm for both cells. Therefore, the spin coating settings are selected so that a coating with this thickness for cell 1 is deposited. In order to compare the performance of HTM layer, solar cells with a Spiro-OMeTAD HTM and without the HTM layer in their structure were fabricated. According to the obtained photovoltaic properties, the solar cell made with Spiro-OMeTAD has a more favorable open-circuit voltage ([Formula: see text]), short-circuit current density ([Formula: see text]), fill factor (FF) and PCE compared to the cell without the HTM layer. Also, hysteresis depends strongly on the perovskite grain size, because large average grain size will lead to an increase in the grain’s contact surface area and a decrease in the density of grain boundaries. Finally, according to the results, it was concluded that, in the presence of a hole transport layer, ion transfer was better and ion accumulation was less intense, and therefore, the hysteresis decreases.

Identifying and suppressing interfacial recombination to achieve high open-circuit voltage in perovskite solar cells

2017 ◽  
Vol 10 (5) ◽  
pp. 1207-1212 ◽  
Author(s):  
Juan-Pablo Correa-Baena ◽  
Wolfgang Tress ◽  
Konrad Domanski ◽  
Elham Halvani Anaraki ◽  
Silver-Hamill Turren-Cruz ◽  
...  
Keyword(s):  
Solar Cells ◽  
Open Circuit Voltage ◽  
Perovskite Solar Cells ◽  
Open Circuit ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
Interfacial Recombination

Dopants in the hole transport layer limit the open-circuit voltage of perovskite solar cells.

Overcoming intrinsic defects of the hole transport layer with optimized carbon nanorods for perovskite solar cells

Nanoscale ◽  
2019 ◽  
Vol 11 (18) ◽  
pp. 8776-8784 ◽  
Author(s):  
Zhiqi Li ◽  
Jiajun Dong ◽  
Wenbin Han ◽  
Guanhua Ren ◽  
Chunyu Liu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Open Circuit Voltage ◽  
Chemical Reduction ◽  
Perovskite Solar Cells ◽  
Open Circuit ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
Reduction Activity ◽  
Oxidized Carbon

To overcome the intrinsic chemical-reduction-activity of highly p-doped PEDOT:PSS and improve the open-circuit voltage of planar inverted perovskite solar cells, an oxidized carbon nanorod is developed and incorporated into a PEDOT:PSS hole transport layer.

scholarly journals Investigation of the S-Shaped Current–Voltage Curve in High Open-Circuit Voltage Ruddlesden–Popper Perovskite Solar Cells

2021 ◽  
Vol 9 ◽  
Author(s):  
Hong Zhong ◽  
Renlai Zhou ◽  
Xiaoqing Wu ◽  
Xiaoyun Lin ◽  
Ya Wang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Open Circuit Voltage ◽  
Phase Distribution ◽  
Perovskite Solar Cells ◽  
Open Circuit ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
Perovskite Layer ◽  
Current Voltage

We report our investigation on the S-shaped current–voltage characteristics in a hot-casting–processed (BA)2 (MA)3Pb4I13 Ruddlesden–Popper (RP) perovskite solar cell. The two-dimensional perovskite solar cells are fabricated with NiOx as the hole transport layer (HTL), which leads to significantly high open-circuit voltage (Voc). The champion device shows a Voc of 1.21 V and a short current density (Jsc) of 17.14 mA/cm2, leading to an overall power conversion efficiency (PCE) of 13.7%. Although the PCE is much higher than the control device fabricated on PEDOT:PSS, a significant S-shaped current–voltage behavior is observed in these NiOx-based devices. It is found that the S-shaped current–voltage behavior is related to the lower dimensional phase distribution and crystallinity at the bottom interface of the RP perovskite layer, and the S-shaped distortion is less severe after the device ageing test.

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