Optimization of charge transport in a Co–Pi modified hematite thin film produced by scalable electron beam evaporation for photoelectrochemical water oxidation

2017 ◽  
Vol 5 (7) ◽  
pp. 3412-3424 ◽  
Author(s):  
Behrooz Eftekharinia ◽  
Ahmad Moshaii ◽  
Ali Dabirian ◽  
Nader Sobhkhiz Vayghan
Keyword(s):  
Thin Film ◽  
Electron Beam ◽  
Charge Transport ◽  
Water Oxidation ◽  
Oxidation Kinetics ◽  
Electron Beam Evaporation ◽  
Photoelectrochemical Water Oxidation

The Co–Pi cocatalyst improves the PEC performance of a hematite film by accelerating the H2O oxidation kinetics and suppressing the charge recombinations.

Luminance Improvement of Red‐Emitting CaS : Eu Thin film Electroluminescent Cells Prepared by Electron Beam Evaporation

1989 ◽  
Vol 136 (9) ◽  
pp. 2736-2740 ◽  
Author(s):  
Ken‐ichi Onisawa ◽  
Kazuo Taguchi ◽  
Moriaki Fuyama ◽  
Katsumi Tamura ◽  
Yoshio Abe ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Beam ◽  
Electron Beam Evaporation

Enhanced Photoelectrochemical Water Oxidation Performance by Fluorine Incorporation in BiVO4 and Mo:BiVO4 Thin Film Photoanodes

2019 ◽  
Vol 11 (18) ◽  
pp. 16430-16442 ◽  
Author(s):  
Martin Rohloff ◽  
Björn Anke ◽  
Olga Kasian ◽  
Siyuan Zhang ◽  
Martin Lerch ◽  
...  
Keyword(s):  
Thin Film ◽  
Water Oxidation ◽  
Oxidation Performance ◽  
Photoelectrochemical Water Oxidation

P-90: Permeation Properties of Inorganic Thin-Film and Its Application to PM-OLED using Electron Beam Evaporation System

2003 ◽  
Vol 34 (1) ◽  
pp. 563 ◽  
Author(s):  
Kwang Ho Kim ◽  
Hoon Kim ◽  
Hong Mo Koo ◽  
Jai Kyeong Kim ◽  
Young Chul Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Beam ◽  
Electron Beam Evaporation ◽  
Permeation Properties

Fabrication of a Peltier Device Based on InSb and SbTe Thin Films

2011 ◽  
Vol 254 ◽  
pp. 50-53 ◽  
Author(s):  
Tatsuya Ishii ◽  
Hideyuki Homma ◽  
Shigeo Yamaguchi
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Beam ◽  
Vapor Phase ◽  
Electron Beam Evaporation ◽  
Peltier Effect ◽  
Insb Thin Films ◽  
Peltier Device ◽  
P Type ◽  
Direct Current Sputtering

We fabricated a thin film Peltier device based on an InSb film and a SbTe film. N-type InSb thin films were grown on sapphire (0001) substrate with InAsSb buffer layer by metalorganic vapor phase epitaxy, and P-type SbTe thin films were deposited on the substrate by electron beam evaporation. N-type and P-type films were separated on the substrate, and between them, a Au thin film was deposited by direct-current sputtering. We observed partial Peltier effect in the device.

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