Origin of the wide band gap from 0.6 to 2.3 eV in photovoltaic material InN: quantum confinement from surface nanostructure

2016 ◽  
Vol 4 (44) ◽  
pp. 17412-17418 ◽  
Author(s):  
Pu Huang ◽  
Jun-jie Shi ◽  
Ping Wang ◽  
Min Zhang ◽  
Yi-min Ding ◽  
...  
Keyword(s):  
Band Gap ◽  
Quantum Confinement ◽  
Wide Band ◽  
Wide Band Gap ◽  
Surface Nanostructure ◽  
Photovoltaic Material

The origin of the wide band gap in InN is revealed and the surface nanostructure of InN with amazing characteristics is investigated in detail.

Remarkable Cd-free Sb2Se3 solar cell yield by interface band-alignment and growth orientation screening

2021 ◽  
Author(s):  
Weihuang Wang ◽  
Zixiu Cao ◽  
Huanhuan Wang ◽  
Jingshan Luo ◽  
Yi Zhang
Keyword(s):  
Solar Cell ◽  
Band Gap ◽  
Wide Band ◽  
Band Alignment ◽  
Cell Yield ◽  
Wide Band Gap ◽  
Growth Orientation ◽  
Photoelectrical Properties ◽  
Photovoltaic Material

Sb2Se3, as an alternative potential photovoltaic material, has attracted a lot of attention in recent years owing to its excellent photoelectrical properties. The eco-friendly TiO2 with wide band gap is...

Size Effect in Germanium Nanostructures Fabricated by Pulsed Laser Deposition

1999 ◽  
Vol 581 ◽  
Author(s):  
K.M. Hassan ◽  
A.K. Sharma ◽  
J. Narayan ◽  
J.F. Muth ◽  
C.W. Teng ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Band Gap ◽  
Quantum Confinement ◽  
Three Dimensional ◽  
Pulsed Laser ◽  
Wide Band ◽  
Laser Deposition ◽  
Island Growth ◽  
Wide Band Gap ◽  
Average Size

ABSTRACTWe have fabricated Ge nanostructures buried in AlN and Al2O3 matrices grown on Si(111) and sapphire substrates by pulsed laser deposition. Our approach involved three-dimensional island growth of low band-gap material followed by a layer of wide band-gap material. The nanodots were uniformly distributed in between alternating layers of AlN or Al2O3. It was observed that these nanodots exhibit crystalline structure when grown at 300-500 °C. The average size of Ge islands was determined to be ∼5-15 nm, which could be varied by controlling laser deposition and substrate parameters. The Raman spectrum showed a peak of the Ge-Ge vibrational mode downward shifted upto 295 cm− which is caused by quantum confinement of phonons in the Ge-dots. The photoluminescence of the Ge dots (size ∼15nm) was blue shifted by ∼0.266 eV from the bulk Ge value of 0.73 eV at 77 K, resulting in a distinct peak at ∼1.0 eV. The spectral positions of both E1 and E2 transitions in the absorption spectra at room temperature and 77K shift toward higher energy as the Ge dot size decreases. The interpretation of these behaviors in terms of quantum confinement is discussed in this work, and the importance of pulsed laser deposition in fabricating novel nanostructures is emphasized

Silicon nanocrystals embedded in silicon carbide as a wide-band gap photovoltaic material

2016 ◽  
Vol 144 ◽  
pp. 551-558 ◽  
Author(s):  
J. López-Vidrier ◽  
P. Löper ◽  
M. Schnabel ◽  
S. Hernández ◽  
M. Canino ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Band Gap ◽  
Silicon Nanocrystals ◽  
Wide Band ◽  
Wide Band Gap ◽  
Photovoltaic Material

TEM and cathodoluminescence of precipitates in II-VI semiconductors

1988 ◽  
Vol 46 ◽  
pp. 488-489
Author(s):  
Joanna L. Batstone
Keyword(s):  
Crystal Growth ◽  
Band Gap ◽  
Local Strain ◽  
Wide Band ◽  
Optoelectronic Device ◽  
Wide Band Gap ◽  
Bulk Crystal Growth ◽  
Transmission Electron ◽  
Device Applications ◽  
Stoichiometry Control

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.

Wide Band-Gap Kesterite Thin Films for Photovoltaic Applications

2018 ◽  
Author(s):  
Raquel Caballero ◽  
Leonor de la Cueva ◽  
Andrea Ruiz-Perona ◽  
Yudenia Sánchez ◽  
Markus Neuschitzer ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap ◽  
Photovoltaic Applications

Preparation and Characterization of Polyvinylidene Fluoride/ZrO2-TiO2 Optical Film with Wide Band Gap and High Refractive Index

2013 ◽  
Vol 28 (6) ◽  
pp. 671-676 ◽  
Author(s):  
Yu-Qing ZHANG ◽  
Li-Li ZHAO ◽  
Shi-Long XU ◽  
Chao ZHANG ◽  
Xiao-Ying CHEN ◽  
...  
Keyword(s):  
Refractive Index ◽  
Band Gap ◽  
Polyvinylidene Fluoride ◽  
Wide Band ◽  
High Refractive Index ◽  
Wide Band Gap ◽  
Optical Film
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