scholarly journals Vanadium-free colusites Cu26A2Sn6S32 (A = Nb, Ta) for environmentally friendly thermoelectrics

2016 ◽  
Vol 4 (39) ◽  
pp. 15207-15214 ◽  
Author(s):  
Yuta Kikuchi ◽  
Yohan Bouyrie ◽  
Michihiro Ohta ◽  
Koichiro Suekuni ◽  
Makoto Aihara ◽  
...  
Keyword(s):  
High Temperature ◽  
Thermoelectric Materials ◽  
Figure Of Merit ◽  
Environmentally Friendly ◽  
Cost Effective ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure

We have successfully developed environmentally-friendly and cost-effective thermoelectric materials based on colusites Cu26A2Sn6S32 (A = Nb, Ta). The vanadium-free colusites show enhanced thermoelectric figure of merit ZT at high temperature.

Thermoelectric Properties of n-Type 90% Bi2Te3+10%Bi2Se3 Thermoelectric Materials Produced by Melt Spinning Method and Sintering

2007 ◽  
Vol 534-536 ◽  
pp. 161-164 ◽  
Author(s):  
Taek Soo Kim ◽  
Byong Sun Chun
Keyword(s):  
Solid Solutions ◽  
Thermoelectric Materials ◽  
Figure Of Merit ◽  
Melt Spinning ◽  
Bending Strength ◽  
Sintering Temperature ◽  
Thermoelectric Figure Of Merit ◽  
Vacuum Sintering ◽  
Thermoelectric Figure ◽  
Sintering Processes

N-type Bi2Te3-Sb2Te3 solid solutions doped with CdCl2 was prepared by melt spinning, crushing and vacuum sintering processes. Microstructure, bending strength and thermoelectric property were investigated as a function of the doping quantity from 0.03wt.% to 0.10wt.% and sintering temperature from 400oC to 500oC, and finally compared with those of conventionally fabricated alloys. The alloy showed a good structural homogeneity as well as bending strength of 3.88Kgf/mm2. The highest thermoelectric figure of merit was obtained by doping 0.03wt.% and sintering at 500oC.

Thermoelectric Properties of Semiconducting Intermetallic Compounds: FeGa3and RuGa3

2003 ◽  
Vol 793 ◽  
Author(s):  
Y. Amagai ◽  
A. Yamamoto ◽  
C. H. Lee ◽  
H. Takazawa ◽  
T. Noguchi ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
High Temperature ◽  
Seebeck Coefficient ◽  
Transport Properties ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
High Seebeck Coefficient

ABSTRACTWe report transport properties of polycrystalline TMGa3(TM = Fe and Ru) compounds in the temperature range 313K<T<973K. These compounds exhibit semiconductorlike behavior with relatively high Seebeck coefficient, electrical resistivity, and Hall carrier concentrations at room temperature in the range of 1017- 1018cm−3. Seebeck coefficient measurements reveal that FeGa3isn-type material, while the Seebeck coefficient of RuGa3changes signs rapidly from large positive values to large negative values around 450K. The thermal conductivity of these compounds is estimated to be 3.5Wm−1K−1at room temperature and decreased to 2.5Wm−1K−1for FeGa3and 2.0Wm−1K−1for RuGa3at high temperature. The resulting thermoelectric figure of merit,ZT, at 945K for RuGa3reaches 0.18.

Materials With Open Crystal Structure as Prospective Novel Thermoelectrics

1998 ◽  
Vol 545 ◽  
Author(s):  
Ctirad Uher ◽  
Jihui Yang ◽  
Siqing Hu
Keyword(s):  
Crystal Structure ◽  
Thermoelectric Materials ◽  
Figure Of Merit ◽  
Optimal Transport ◽  
Heusler Alloys ◽  
Thermoelectric Figure Of Merit ◽  
Great Flexibility ◽  
Thermoelectric Figure ◽  
Guest Species ◽  
Filled Skutterudites

AbstractA useful approach to identify materials with high thermoelectric figure of merit is to search for solids that offer great flexibility to modify and tailor the structure so as to achieve the optimal transport behavior. Among the most promising novel thermoelectric materials are solids with “open crystal structure”. They may be typified by structures with unfilled cages, crystals with an empty atomic sublattice, and by a network of polyhedral cages enclosing guest species. In this paper we present our latest results concerning transport properties in the above classes of solids. Specifically, we focus on the filled skutterudites, half-Heusler alloys, and clathrates.

Enhancing the average thermoelectric figure of merit of elemental Te by suppressing grain boundary scattering

2020 ◽  
Vol 8 (17) ◽  
pp. 8455-8461 ◽  
Author(s):  
Yehao Wu ◽  
Feng Liu ◽  
Qi Zhang ◽  
Tiejun Zhu ◽  
Kaiyang Xia ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Grain Boundary ◽  
Thermoelectric Materials ◽  
Figure Of Merit ◽  
Thermoelectric Figure Of Merit ◽  
Boundary Scattering ◽  
Thermoelectric Figure ◽  
Grain Boundary Scattering

Suppressed grain boundary scattering contributes to enhanced electrical conductivity and device zT in elemental Te based thermoelectric materials.

Enhanced thermoelectric performance of GeTe through in situ microdomain and Ge-vacancy control

2019 ◽  
Vol 7 (25) ◽  
pp. 15181-15189 ◽  
Author(s):  
Khasim Saheb Bayikadi ◽  
Raman Sankar ◽  
Chien Ting Wu ◽  
Chengliang Xia ◽  
Yue Chen ◽  
...  
Keyword(s):  
High Temperature ◽  
Figure Of Merit ◽  
Thermoelectric Performance ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Vacancy Level

The thermoelectric figure-of-merit (ZT) for GeTe powder is able to be raised from ∼0.8 to 1.37 at high temperature near ∼500 °C by tuning the Ge vacancy level through a reversible in situ route.

Significantly enhanced thermoelectric figure of merit of p-type Mg3Sb2-based Zintl phase compounds via nanostructuring and employing high energy mechanical milling coupled with spark plasma sintering

2015 ◽  
Vol 3 (20) ◽  
pp. 10777-10786 ◽  
Author(s):  
A. Bhardwaj ◽  
N. S. Chauhan ◽  
D. K. Misra
Keyword(s):  
Thermoelectric Materials ◽  
Mechanical Milling ◽  
Figure Of Merit ◽  
High Energy ◽  
Thermoelectric Figure Of Merit ◽  
Zintl Phase ◽  
Thermoelectric Figure ◽  
Plasma Sintering ◽  
Spark Plasma ◽  
P Type

Several nanostructuring methods have been demonstrated to produce a variety of nanostructured materials, and these methods are well recognized as effective paradigms for improving the performance of thermoelectric materials.

Electrical Properties and Figures of Merit for New Chalcogenide-Based Thermoelectric Materials

1997 ◽  
Vol 478 ◽  
Author(s):  
Jon L. Schindler ◽  
Tim P. Hogan ◽  
Paul W. Brazis ◽  
Carl R. Kannewurf ◽  
Duck-Young Chung ◽  
...  
Keyword(s):  
Thermoelectric Materials ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Figures Of Merit ◽  
Lattice Symmetry ◽  
Thermoelectric Refrigeration ◽  
Polychalcogenide Flux ◽  
P Type

AbstractNew Bi-based chalcogenide compounds have been prepared using the polychalcogenide flux technique for crystal growth. These materials exhibit characteristics of good thermoelectric materials. Single crystals of the compound CsBi4Te6 have shown conductivity as high as 2440 S/cm with a p-type thermoelectric power of ≈ +110 μV/K at room temperature. A second compound, β-K2Bi8Se13 shows lower conductivity ≈ 240 S/cm, but a larger n-type thermopower ≈ −200 μV/K. Thermal transport measurements have been performed on hot-pressed pellets of these materials and the results show comparable or lower thermal conductivities than Bi2Te3. This improvement may reflect the reduced lattice symmetry of the new chalcogenide thermoelectrics. The thermoelectric figure of merit for CsBi4Te6 reaches ZT ≈ 0.32 at 260 K and for β-K2Bi8Se13 ZT ≈ 0.32 at room temperature, indicating that these compounds are viable candidates for thermoelectric refrigeration applications.

The Thermoelectric Process

1997 ◽  
Vol 478 ◽  
Author(s):  
C. B. Vining
Keyword(s):  
Thermodynamic Properties ◽  
Thermoelectric Materials ◽  
Figure Of Merit ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Thermoelectric Conversion ◽  
New Approaches ◽  
Alternative Approach ◽  
Alternative Approaches

AbstractThe efficiency of thermoelectric technology today is limited by the properties of available thermoelectric materials and a wide variety of new approaches to developing better materials have recently been suggested. The key goal is to find a material with a large ZT, the dimensionless thermoelectric figure of merit. However, if an analogy is drawn between thermoelectric technology and gas-cycle engines then selecting different materials for the thermoelements is analogous to selecting a different working gas for the mechanical engine. And an attempt to improve ZT is analogous to an attempt to improve certain thermodynamic properties of the working-gas. An alternative approach is to focus on the thermoelectric process itself (rather than on ZT), which is analogous to considering alternate cycles such as Stirling vs. Brayton vs. Rankine etc., rather than ‘merely’ considering alternative ‘gases’. Focusing on the process is a radically different approach compared to previous studies focusing on ZT. Aspects of the thermoelectric process and alternative approaches to efficient thermoelectric conversion are discussed.

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