Probing synergetic effects between platinum nanoparticles deposited via atomic layer deposition and a molybdenum carbide nanotube support through surface characterization and device performance

2016 ◽  
Vol 4 (23) ◽  
pp. 9253-9265 ◽  
Author(s):  
Shibely Saha ◽  
Bridger Martin ◽  
Brian Leonard ◽  
Dongmei Li
Keyword(s):  
Atomic Layer Deposition ◽  
Platinum Nanoparticles ◽  
Surface Characterization ◽  
Molybdenum Carbide ◽  
Atomic Layer ◽  
Device Performance ◽  
Pure Molybdenum ◽  
Synergetic Effects ◽  
Layer Deposition ◽  
Phase Pure

A phase-pure molybdenum carbide modified by Pt ALD significantly reduced Pt loading while enhancing the activity and durability of the resultant catalysts.

Nucleation and growth process of atomic layer deposition platinum nanoparticles on strontium titanate nanocuboids

2017 ◽  
Vol 28 (18) ◽  
pp. 185704 ◽  
Author(s):  
Chuandao Wang ◽  
Linhua Hu ◽  
Kenneth Poeppelmeier ◽  
Peter C Stair ◽  
Laurence Marks
Keyword(s):  
Atomic Layer Deposition ◽  
Strontium Titanate ◽  
Platinum Nanoparticles ◽  
Growth Process ◽  
Atomic Layer ◽  
Nucleation And Growth ◽  
Layer Deposition

Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum

2017 ◽  
Vol 35 (1) ◽  
pp. 01B141 ◽  
Author(s):  
Adam Bertuch ◽  
Brent D. Keller ◽  
Nicola Ferralis ◽  
Jeffrey C. Grossman ◽  
Ganesh Sundaram
Keyword(s):  
Atomic Layer Deposition ◽  
Molybdenum Carbide ◽  
Atomic Layer ◽  
Layer Deposition

scholarly journals Dissociation reaction of B2H6 on TiN surfaces during atomic layer deposition: first-principles study

RSC Advances ◽  
2017 ◽  
Vol 7 (88) ◽  
pp. 55750-55755 ◽  
Author(s):  
Hwanyeol Park ◽  
Sungwoo Lee ◽  
Ho Jun Kim ◽  
Euijoon Yoon ◽  
Gun-Do Lee
Keyword(s):  
Atomic Layer Deposition ◽  
First Principles ◽  
Atomic Layer ◽  
Fabrication Process ◽  
Device Performance ◽  
Memory Devices ◽  
Dissociation Reaction ◽  
First Principles Study ◽  
Layer Deposition

In the fabrication process of memory devices, a void-free tungsten (W) gate process with good conformability is very important for improving the conductivity of the W gate, leading to enhancement of device performance.

Atomic Layer Deposition of Platinum Nanoparticles on Titanium Oxide and Tungsten Oxide Using Platinum(II) Hexafluoroacetylacetonate and Formalin as the Reactants

2014 ◽  
Vol 118 (17) ◽  
pp. 8960-8970 ◽  
Author(s):  
Virginia R. Anderson ◽  
Noemi Leick ◽  
Joel W. Clancey ◽  
Katherine E. Hurst ◽  
Kim M. Jones ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Tungsten Oxide ◽  
Titanium Oxide ◽  
Platinum Nanoparticles ◽  
Atomic Layer ◽  
Layer Deposition ◽  
And Tungsten

Decoration of Graphenated Carbon Nanotube Electrodes with Platinum Nanoparticles via Atomic Layer Deposition

2021 ◽  
Vol MA2021-02 (6) ◽  
pp. 527-527
Author(s):  
Mariana Madelen Vasquez ◽  
Rafael Bento Serpa ◽  
Jeffrey Glass ◽  
Charles Parker
Keyword(s):  
Carbon Nanotube ◽  
Atomic Layer Deposition ◽  
Platinum Nanoparticles ◽  
Atomic Layer ◽  
Layer Deposition
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