scholarly journals Tuning plasmonic properties of CuS thin films via valence band filling

RSC Advances ◽  
2017 ◽  
Vol 7 (18) ◽  
pp. 11118-11122 ◽  
Author(s):  
Shankara S. Kalanur ◽  
Hyungtak Seo
Keyword(s):  
Thin Films ◽  
Electrochemical Reduction ◽  
Valence Band ◽  
Hole Concentration ◽  
Band Filling

Tuning plasmonic properties of CuS thin films via electrochemical reduction by decreasing hole concentration in the valence band.

Preparation of PZT Thin Films on Stainless Steel Using Electrochemical Reduction

1998 ◽  
Vol 136 (2) ◽  
pp. 293-297 ◽  
Author(s):  
Michio Koinuma ◽  
Hideki Ohmura ◽  
Yoshiro Fujioka ◽  
Yasumichi Matsumoto ◽  
Satoshi Yamada
Keyword(s):  
Thin Films ◽  
Stainless Steel ◽  
Electrochemical Reduction ◽  
Pzt Thin Films

Low Driving Voltage of Organic Light-Emitting Diodes Using p-Doping Starburst Amine as Hole Transporter

2000 ◽  
Vol 660 ◽  
Author(s):  
Xiang Zhou ◽  
Andreas Nollau ◽  
Jan Blochwitz ◽  
Martin Pfeiffer ◽  
Torsten Fritz ◽  
...  
Keyword(s):  
Thin Films ◽  
Hole Concentration ◽  
Organic Light Emitting Diodes ◽  
Driving Voltage ◽  
Temperature Dependent ◽  
Light Emitting ◽  
Layer Sequence ◽  
Undoped Material ◽  
High Bulk

ABSTRACTWe investigate the electrical properties and the OLED application of controlledly doped amorphous hole transporters. Thin films of starburst amine, 4,4',4“-tris(N,N-diphenyl- amino) triphenylamine (TDATA), doped by a fully fluorinated form of tetracyano- quinodimethane (F4-TCNQ), are characterized in situ by temperature dependent conductivity and Seebeck measurements. The conductivity and hole concentration increase with dopant concentration and are many orders of magnitude higher than those of undoped material. OLED devices with the layer sequence ITO/TDATA(200 nm)/Alq3(65 nm)/LiF(1 nm)/Al were fabricated. The use of p-doped TDATA thin films with high bulk conductivity and hole concentration reduces the resistance of the devices and leads to a thinner space charge layer which facilitates injection of holes from the ITO anode.

Control of electrochemical reduction behavior in nonequilibrium Al-doped TiO2 thin films

2019 ◽  
Vol 126 (21) ◽  
pp. 215108
Author(s):  
Akihiro Ishii ◽  
Itaru Oikawa ◽  
Hitoshi Takamura
Keyword(s):  
Thin Films ◽  
Electrochemical Reduction ◽  
Tio2 Thin Films ◽  
Reduction Behavior ◽  
Doped Tio2

UPS, XPS, AES STUDIES OF Te THIN FILMS DEPOSITED ON Si(100) 2×1

1994 ◽  
Vol 01 (04) ◽  
pp. 589-592 ◽  
Author(s):  
S. DI NARDO ◽  
L. LOZZI ◽  
M. PASSACANTANDO ◽  
P. PICOZZI ◽  
S. SANTUCCI
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Electronic Properties ◽  
Valence Band ◽  
Room Temperature ◽  
Surface States ◽  
Growth Mode ◽  
Characteristic Behavior ◽  
Complete Study ◽  
Nominal Coverage

This work represents the first complete study of the interaction between Te and Si in very thin films of tellurium grown at room temperature on Si(100) 2×1 surfaces. In particular, the electronic properties have been investigated by UPS and XPS measurements and information on growth of tellurium on silicon have been obtained by AES measurements. Our results indicate that the interaction between tellurium and silicon is weak, taking the characteristic behavior of simple metals. Increasing the film thickness, the growth mode is one layer, completed with about 2 Å of Te nominal coverage, plus islanding, until the thickness reaches the value of about 10 Å, followed by coalescence of islands. When tellurium has completed a layer, the valence band surface states of silicon are quenched.

Chemical bath process for highly efficient Cd-free chalcopyrite thin-film-based solar cells

2000 ◽  
Vol 77 (9) ◽  
pp. 723-729
Author(s):  
A Ennaoui
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cells ◽  
Valence Band ◽  
Photoelectron Spectroscopy ◽  
Subsequent Development ◽  
Energy Band Diagram ◽  
Buffer Layers ◽  
Band Offsets ◽  
Good Surface

The highest efficiency for Cu(Ga,In)Se2 (CIGS) thin-film-based solar cells has been achieved with CdS buffer layers prepared by a solution growth method known as the chemical bath deposition (CBD). With the aim of developing Cd-free chalcopyrite-based thin-film solar cells, we describe the basic concepts involved in the CBD technique. The recipes developed in our laboratory for the heterogeneous deposition of good-quality thin films of ZnO, ZnSe, and MnS are presented. In view of device optimization, the initial formation of chemical-bath-deposited ZnSe thin films on Cu(Ga,In)(S,Se)2 (CIGSS) and the subsequent development of the ZnSe/CIGSS heterojunctions were investigated by X-ray photoelectron spectroscopy (XPS). The good surface coverage was controlled by measuring changes in the valence-band electronic structure as well as changes in the In4d, Zn3d core lines. From these measurements, the growth rate was found to be around 3.6 nm/min. The valence band and the conduction band-offsets ΔEV and ΔEC between the layers were determined to be 0.60 and 1.27 eV, respectively for the CIGSS/ZnSe interface. The energy-band diagram is discussed in connection with the band-offsets detemined from XPS data. A ZnSe thickness below 10 nm has been found to be optimum for achieving a homogeneous and compact buffer layer on CIGSS with a total area efficiency of 13.7%.PACS No.: 42.70

Optical Nonlinearity of Sputtered Co3O4-SiO2-TiO2 Thin Films

2001 ◽  
Vol 703 ◽  
Author(s):  
Hiroki Yamamoto ◽  
Takashi Naito ◽  
Kazuyuki Hirao
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Excited State ◽  
Absorption Coefficient ◽  
Extinction Coefficient ◽  
Ground State ◽  
Optical Nonlinearity ◽  
Tio2 Thin Films ◽  
Change Mechanism ◽  
Band Filling

ABSTRACTOptical non-linearity of cobalt oxide with SiO2-TiO2 additives was investigated, and the change mechanism of the refractive index (n) and extinction coefficient (k), based on the relation between band structure and optical non-linearity of the thin films, was discussed. Refractive index and extinction coefficient of Co3O4 thin films in the ground state were 3.17 and 0.42, respectively. Both n and k decreased by irradiation from a pulse laser with 650 nm of wavelength (1.91eV). These values in the excited state were 2.91 and 0.41, respectively. n2 estimated from the change of n and k was −2.8 ×10−11 m2/W. The film had a band gap corresponding to 2.06eV, indicating that it was widened by the band filling effect during the laser irradiation at 1.91eV, and this led to the decrease in absorption coefficient and refractive index.

Valence band studies of YBaCuO thin films

1988 ◽  
Vol 153-155 ◽  
pp. 1445-1446 ◽  
Author(s):  
D. van der Marel ◽  
D. Heitmann ◽  
J. van Elp ◽  
G.A. Sawatzky
Keyword(s):  
Thin Films ◽  
Valence Band
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