scholarly journals The photovoltaic effect in a [001] orientated ZnO thin film and its physical mechanism

RSC Advances ◽  
2017 ◽  
Vol 7 (16) ◽  
pp. 9596-9604 ◽  
Author(s):  
Bin Liu ◽  
Jinlei Wang ◽  
Cuijin Pei ◽  
Lichao Ning ◽  
Lijuan Cheng ◽  
...  
Keyword(s):  
Thin Film ◽  
Electric Field ◽  
Physical Mechanism ◽  
Photovoltaic Effect ◽  
Photovoltaic Device ◽  
Internal Electric Field ◽  
Zno Thin Film ◽  
Electron Conversion

Herein, we developed an [001] orientated ZnO thin film photovoltaic device without p–n junction. On the basis of the presence of the internal electric field in ZnO thin film, we proposed a new physical mechanism of photon-to-electron conversion.

Abnormal capacitance–voltage and switchable photovoltaic effect of epitaxial Mn-doped BiFeO3 thin film capacitor

2015 ◽  
Vol 08 (05) ◽  
pp. 1550057 ◽  
Author(s):  
Zeng-Wei Peng ◽  
Bao-Ting Liu
Keyword(s):  
Electric Field ◽  
Indium Tin Oxide ◽  
Photovoltaic Effect ◽  
Rf Magnetron Sputtering ◽  
Internal Field ◽  
Ferroelectric Polarization ◽  
Internal Electric Field ◽  
Photovoltaic Properties ◽  
Capacitance Voltage ◽  
Mn Doped

Epitaxial BiFe 0.95 Mn 0.05 O 3 (BFMO) film was deposited on (001)-oriented SrRuO 3 (SRO) coated SrTiO 3 (STO) substrate by radio-frequency (rf) magnetron sputtering. Indium tin oxide (ITO) was grown on BFMO/STO heterojunction to fabricate ITO/BFMO/SRO capacitor for investigating the ferroelectric and photovoltaic properties. The ITO/BFMO/SRO capacitor exhibits large remanent polarizations of 92.2 μC/cm2, 101 μC/cm2 and 109 μC/cm2 measured at 20 V, 25 V and 30 V, respectively. An observed abnormal capacitance–voltage (C–V) curve can be explained based on the ITO/BFMO interface. The calculated capacitance and junction width of ITO/BFMO interface are 105 pF and 32 nm, respectively. Additionally, it is found that photovoltaic effect of the ITO/BFMO/SRO capacitor is mainly attributed to ferroelectric polarization and internal electric field induced by defects. The photocurrent densities coming from ferroelectric polarization and internal field are 36 μA/cm2 and 23 μA/cm2, respectively. The photovoltaic output from the ferroelectric polarization is obviously larger than that from the internal electric field.

scholarly journals Investigation of the Electrical Characteristics of Bilayer ZnO/In2O3 Thin-Film Transistors Fabricated by Solution Processing

Materials ◽  
2018 ◽  
Vol 11 (11) ◽  
pp. 2103 ◽  
Author(s):  
Hyeonju Lee ◽  
Xue Zhang ◽  
Jung Kim ◽  
Eui-Jik Kim ◽  
Jaehoon Park
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Electric Field ◽  
Metal Oxide ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Internal Electric Field ◽  
Bilayer Structure ◽  
Gate Bias ◽  
X Ray

Metal-oxide thin-film transistors (TFTs) have been developed as promising candidates for use in various electronic and optoelectronic applications. In this study, we fabricated bilayer zinc oxide (ZnO)/indium oxide (In2O3) TFTs by using the sol-gel solution process, and investigated the structural and chemical properties of the bilayer ZnO/In2O3 semiconductor and the electrical properties of these transistors. The thermogravimetric analysis results showed that ZnO and In2O3 films can be produced by the thermal annealing process at 350 °C. The grazing incidence X-ray diffraction patterns and X-ray photoemission spectroscopy results revealed that the intensity and position of characteristic peaks related to In2O3 in the bilayer structure were not affected by the underlying ZnO film. On the other hand, the electrical properties, such as drain current, threshold voltage, and field-effect mobility of the bilayer ZnO/In2O3 TFTs obviously improved, compared with those of the single-layer In2O3 TFTs. Considering the energy bands of ZnO and In2O3, the enhancement in the TFT performance is explained through the electron transport between ZnO and In2O3 and the formation of an internal electric field in the bilayer structure. In the negative gate-bias stress experiments, it was found that the internal electric field contributes to the electrical stability of the bilayer ZnO/In2O3 TFT by reducing the negative gate-bias-induced field and suppressing the trapping of holes in the TFT channel. Consequently, we suggest that the bilayer structure of solution-processed metal-oxide semiconductors is a viable means of enhancing the TFT performance.

Electric field effect in pulsed laser deposition of epitaxial ZnO thin film

2004 ◽  
Vol 79 (4-6) ◽  
pp. 807-809 ◽  
Author(s):  
C. Hirose ◽  
Y. Matsumoto ◽  
Y. Yamamoto ◽  
H. Koinuma
Keyword(s):  
Thin Film ◽  
Electric Field ◽  
Pulsed Laser Deposition ◽  
Field Effect ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Electric Field Effect ◽  
Zno Thin Film

Electric-field driven insulator-metal transition and tunable magnetoresistance in ZnO thin film

2018 ◽  
Vol 112 (15) ◽  
pp. 153505 ◽  
Author(s):  
Le Zhang ◽  
Shanshan Chen ◽  
Xiangyang Chen ◽  
Zhizhen Ye ◽  
Liping Zhu
Keyword(s):  
Thin Film ◽  
Electric Field ◽  
Zno Thin Film ◽  
Insulator Metal Transition
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