scholarly journals Photoluminescence and electrical properties of bidirectional ZnO nanowires on Zn foils via a thermal oxidation method

RSC Advances ◽  
2017 ◽  
Vol 7 (10) ◽  
pp. 5807-5812 ◽  
Author(s):  
Zhang-Wei Wu ◽  
Shing-Long Tyan ◽  
Hsin-Hsien Chen ◽  
Jung-Chun-Andrew Huang ◽  
Chung-Lin Wu ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Thermal Oxidation ◽  
Zno Nanowires ◽  
Step Process ◽  
Oxidation Method ◽  
Zno Powders ◽  
Zinc Foils

ZnO nanowires were directly grown on ductile zinc foils through a two-step process. Zn foils were fabricated from a mixture of Zn and ZnO powders; and ZnO NWs were produced using thermal oxidation at temperatures of 300–600 °C.

Fabrication and Characterization of ZnO Nanowires by Thermal Oxidation Method

2012 ◽  
Vol 585 ◽  
pp. 124-128 ◽  
Author(s):  
Divya Somvanshi ◽  
Satyabrata Jit
Keyword(s):  
Electron Microscope ◽  
Thermal Oxidation ◽  
Present Method ◽  
Zno Nanowires ◽  
Metal Foil ◽  
Oxidation Method ◽  
Si Substrates ◽  
Fabrication And Characterization ◽  
Scanning Electron

Fabrication of ZnO nanowires (NWs) by thermal oxidation method has been studied in this work. The ZnO NWs have been grown by oxidation of Zn metal foil under oxygen environment for two typical oxidation durations. We have investigated the behavior of the as-grown ZnO NWs with the change in oxidation duration at particular temperature. The changes in surface morphology and chemical composition with the variation of oxidation duration have been analyzed by scanning electron microscope (SEM) and energy dispersive spectroscopy (EDS) respectively. From EDS spectra, it is confirmed that Zn metal has completely oxidized into ZnO for higher oxidation duration. In this work, the optimized duration of oxidation for growth of ZnO NWs is found to be ~60 minutes at particular temperature of 600oC. The present method provides a possible mechanism for the growth of ZnO NWs on the p-Si substrates.

Correlation between surface morphology and electrical properties of VO2 films grown by direct thermal oxidation method

2015 ◽  
Vol 353 ◽  
pp. 1082-1086 ◽  
Author(s):  
Joonseok Yoon ◽  
Changwoo Park ◽  
Sungkyun Park ◽  
Bongjin Simon Mun ◽  
Honglyoul Ju
Keyword(s):  
Electrical Properties ◽  
Surface Morphology ◽  
Thermal Oxidation ◽  
Oxidation Method

ZnO nanowires grown directly on zinc foils by thermal oxidation in air: Wetting and water adhesion properties

2016 ◽  
Vol 170 ◽  
pp. 156-159 ◽  
Author(s):  
C. Florica ◽  
N. Preda ◽  
A. Costas ◽  
I. Zgura ◽  
I. Enculescu
Keyword(s):  
Thermal Oxidation ◽  
Zno Nanowires ◽  
Adhesion Properties ◽  
Water Adhesion ◽  
Zinc Foils ◽  
Oxidation In Air

scholarly journals Synthesis and Characterization of ZnO Nanowires by Thermal Oxidation of Zn Thin Films at Various Temperatures

Molecules ◽  
2012 ◽  
Vol 17 (5) ◽  
pp. 5021-5029 ◽  
Author(s):  
Mohammad Reza Khanlary ◽  
Vahid Vahedi ◽  
Ali Reyhani
Keyword(s):  
Thin Films ◽  
Thermal Oxidation ◽  
Zno Nanowires ◽  
Synthesis And Characterization

How Small Is Too Small ? Understanding The Electronic Structure Of Atomic-Scale Transistors

1999 ◽  
Vol 5 (S2) ◽  
pp. 120-121
Author(s):  
D. A. Muller ◽  
T. Sorsch ◽  
S. Moccio ◽  
F. H. Baumann ◽  
K. Evans-Lutterodt ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Electrical Properties ◽  
Thermal Oxidation ◽  
Electronic Devices ◽  
Local Environment ◽  
Gate Oxide ◽  
Atomic Scale ◽  
Gate Oxides ◽  
Bulk Properties ◽  
Commercial Use

The transistors planned for commercial use ten years from now in many electronic devices will have gate lengths shorter than 130 atoms, gate oxides thinner than 1.2 nm of SiO2 and clock speeds in excess of 10 GHz. It is now technologically possible to produce such transistors with gate oxides only 5 silicon atoms thick[l]. Since at least two of those 5 atoms are not in a local environment similar to either bulk Si or bulk SiO2, the properties of the interface are responsible for a significant fraction of the “bulk” properties of the gate oxide. However the physical (and especially their electrical) properties of the interfacial atoms are very different from .bulk Si or bulk SiO2. Further, roughness on an atomic scale can alter the leakage current by orders of magnitude.In our studies of such devices, we found that thermal oxidation tends to produce Si/SiO2 interfaces with 0.1-0.2 nm rms roughness.

scholarly journals Size Distribution, Mechanical and Electrical Properties of CuO Nanowires Grown by Modified Thermal Oxidation Methods

Nanomaterials ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 1051 ◽  
Author(s):  
Raitis Sondors ◽  
Jelena Kosmaca ◽  
Gunta Kunakova ◽  
Liga Jasulaneca ◽  
Matiss Martins Ramma ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Aspect Ratio ◽  
Electric Field ◽  
Thermal Oxidation ◽  
Size Distribution ◽  
High Aspect Ratio ◽  
Growth Conditions ◽  
Cuo Nanowires ◽  
Young’S Moduli ◽  
Order Of Magnitude

Size distribution, Young’s moduli and electrical resistivity are investigated for CuO nanowires synthesized by different thermal oxidation methods. Oxidation in dry and wet air were applied for synthesis both with and without an external electrical field. An increased yield of high aspect ratio nanowires with diameters below 100 nm is achieved by combining applied electric field and growth conditions with additional water vapour at the first stage of synthesis. Young’s moduli determined from resonance and bending experiments show similar diameter dependencies and increase above 200 GPa for nanowires with diameters narrower than 50 nm. The nanowires synthesized by simple thermal oxidation possess electrical resistivities about one order of magnitude lower than the nanowires synthesized by electric field assisted approach in wet air. The high aspect ratio, mechanical strength and robust electrical properties suggest CuO nanowires as promising candidates for NEMS actuators.

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