Microstructural, electrical and carrier transport properties of Au/NiO/n-GaN heterojunction with a nickel oxide interlayer

RSC Advances ◽  
2016 ◽  
Vol 6 (107) ◽  
pp. 105761-105770 ◽  
Author(s):  
V. Rajagopal Reddy ◽  
P. R. Sekhar Reddy ◽  
I. Neelakanta Reddy ◽  
Chel-Jong Choi

Nickel oxide (NiO) films are prepared on n-type GaN by an e-beam evaporation technique and its structural and chemical characteristics analysed by XRD, TEM and XPS measurements first at room temperature.

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