Low temperature processed graphene thin film transparent electrodes for supercapacitor applications

RSC Advances ◽  
2016 ◽  
Vol 6 (82) ◽  
pp. 78702-78713 ◽  
Author(s):  
Shriniwas Yadav ◽  
Inderpreet Kaur
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Sheet Resistance ◽  
Spin Coating ◽  
Low Temperatures ◽  
Functionalized Graphene ◽  
Transparent Electrodes ◽  
Thin Film Electrodes ◽  
Supercapacitor Applications

A highly conducting graphene thin film electrodes with remarkable sheet resistance of the order of 0.4 kΩ sq.−1and transmittance up to 94% using spin coating of functionalized graphene solution fabricated at low temperatures of the order of 150 °C.

scholarly journals Effects of Concentration and Spin Speed on the Optical and Electrical Properties of Silver Nanowire Transparent Electrodes

Materials ◽  
2021 ◽  
Vol 14 (9) ◽  
pp. 2219
Author(s):  
Xiaopeng Li ◽  
Jiayue Zhou ◽  
Dejun Yan ◽  
Yong Peng ◽  
Yong Wang ◽  
...  
Keyword(s):  
Sheet Resistance ◽  
Spin Coating ◽  
Figure Of Merit ◽  
Silver Nanowires ◽  
Solution Concentration ◽  
Ethanol Solution ◽  
Silver Nanowire ◽  
Optical And Electrical Properties ◽  
Transparent Electrodes ◽  
Spin Speed

In this paper, silver nanowires (AgNWs) with a diameter of 40 nm and a length of 45 μm were dispersed into an ethanol solution to prepare AgNW solutions with concentrations of 1, 2, and 3 mg/mL, respectively. The AgNW solutions were then deposited on a glass substrate using spin-coating at 1000, 2000, and 3000 rpm for 45 s, respectively, to prepare transparent electrodes. The results showed that the distribution of AgNWs on the substrate increased in density with the increase in the AgNW solution concentration and the decrease in spin speed. The effect of concentration on the distribution of AgNWs was greater than that of the spin speed. The transmittance of each electrode was between 84.19% and 88.12% at 550 nm, the average sheet resistance was between 20.09 and 358.11 Ω/sq, the highest figure of merit (FoM) was 104.42, and the lowest haze value was 1.48%. The electrode prepared at 1000 rpm with a concentration of 2 mg/mL and that prepared at 3000 rpm with a concentration of 3 mg/mL were very similar in terms of the average sheet resistance, transmittance at 550 nm, FoM, and haze value; thus, these two electrodes could be considered equivalent. The haze value of the electrode was positively correlated with the spin speed at low concentration, but that relationship became inverse as the concentration rose. For the AgNWs used in this experiment with an aspect ratio of 1125, the concentration of the AgNW solution should reach at least 2 mg/mL to ensure that the FoM of the electrode is greater than 35.

scholarly journals Binder free 2D aligned efficient MnO2 micro flowers as stable electrodes for symmetric supercapacitor applications

RSC Advances ◽  
2017 ◽  
Vol 7 (59) ◽  
pp. 36886-36894 ◽  
Author(s):  
Anil A. Kashale ◽  
Madagonda M. Vadiyar ◽  
Sanjay S. Kolekar ◽  
Bhaskar R. Sathe ◽  
Jia-Yaw Chang ◽  
...  
Keyword(s):  
Thin Film ◽  
Stainless Steel ◽  
Specific Capacitance ◽  
Stainless Steel Mesh ◽  
Steel Mesh ◽  
Symmetric Supercapacitor ◽  
Binder Free ◽  
Thin Film Electrodes ◽  
Supercapacitor Applications

δ-MnO2 thin film electrodes (M1) deposited on stainless steel mesh using CBD were used in symmetric supercapacitor device (SSM/M1//M1/SSM) with aqueous 1 M Na2SO4 electrolyte. The device shows 138% retention of specific capacitance after 2500 cycles.

scholarly journals Enabling high performance n-type metal oxide semiconductors at low temperatures for thin film transistors

2020 ◽  
Vol 7 (9) ◽  
pp. 1822-1844 ◽  
Author(s):  
Nidhi Tiwari ◽  
Amoolya Nirmal ◽  
Mohit Rameshchandra Kulkarni ◽  
Rohit Abraham John ◽  
Nripan Mathews
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Metal Oxide ◽  
Low Temperatures ◽  
Thin Film Transistors ◽  
High Performance ◽  
Metal Oxide Semiconductors ◽  
Oxide Semiconductors ◽  
Temperature Activation

The review highlights low temperature activation processes for high performance n-type metal oxide semiconductors for TFTs.

scholarly journals Surface characteristics of silver oxide thin film electrodes for supercapacitor applications

2017 ◽  
Vol 519 ◽  
pp. 223-230 ◽  
Author(s):  
Mojtaba Mirzaeian ◽  
Abraham A. Ogwu ◽  
Hassan Fathinejad Jirandehi ◽  
Saule Aidarova ◽  
Zhanar Ospanova ◽  
...  
Keyword(s):  
Thin Film ◽  
Silver Oxide ◽  
Surface Characteristics ◽  
Oxide Thin Film ◽  
Thin Film Electrodes ◽  
Supercapacitor Applications

scholarly journals Effect of Oxygen in Low Temperature Boron and Phosphorus Diffusion Gettering of Iron in Czochralski-Grown Silicon

2009 ◽  
Vol 156-158 ◽  
pp. 395-400 ◽  
Author(s):  
Ville Vähänissi ◽  
Antti Haarahiltunen ◽  
H. Talvitie ◽  
M.I. Asghar ◽  
Marko Yli-Koski ◽  
...  
Keyword(s):  
Low Temperature ◽  
Sheet Resistance ◽  
Low Temperatures ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Minority Carrier Diffusion Length ◽  
Thermal Budget ◽  
Phosphorus Diffusion ◽  
Oxygen Precipitation ◽  
Effect Of Oxygen

Low temperature boron and phosphorous diffusion gettering (BDG and PDG) of iron in Czochralski-grown silicon were experimentally studied. Differences and similarities between the gettering techniques were clarified by using intentionally iron contaminated wafers emphasizing especially the effect of oxygen. Experiments showed that the surprisingly high gettering effects of BDG could be explained by B-Si precipitates. Oxygen precipitation was seen to decrease minority carrier diffusion length after long gettering at low temperatures in both BDG and PDG. In the case of BDG oxygen precipitation affected more as a higher thermal budget was needed to obtain similar sheet resistance to that of PDG. According to experiments the efficiency of BDG can not be concluded from the sheet resistance, whereas the efficiency of PDG can. This has practical influences in a process control environment.

Ultrathin Silicon Dioxide Films: Photo-Induced Growth

1988 ◽  
Vol 129 ◽  
Author(s):  
Ian W. Boyd
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Silicon Dioxide ◽  
Uv Radiation ◽  
Low Temperatures ◽  
Film Growth ◽  
Thin Film Growth ◽  
Photon Beams ◽  
Visible Radiation ◽  
Oxidation Rates

ABSTRACTThe reaction of oxygen with silicon induced by intense photon beams at different wavelengths is described. We find different enhancement rates applying to UV and visible radiation, which can be as high as 400% for thin film growth at low temperatures. Often, however, they can be so small that they may be completely overshadowed at high temperatures by the rapid oxidation rates arising from thermal contributions. By using UV radiation projected through a mask to induce low temperature photonic oxidation of silicon, we have grown directly patterned oxide structures dispensing with the need for conventional photolithographic etching.

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