Ultra-low dielectric constant materials with hydrophobic property derived from polyhedral oligomeric silsequioxane (POSS) and perfluoro-aromatics

RSC Advances ◽  
2016 ◽  
Vol 6 (90) ◽  
pp. 87433-87439 ◽  
Author(s):  
Jinmeng Hao ◽  
Yanfeng Wei ◽  
Jianxin Mu
Keyword(s):  
Dielectric Constant ◽  
Dielectric Constants ◽  
Low Dielectric Constant ◽  
Hydrophobic Property ◽  
Hydrophobic Properties ◽  
Low Dielectric ◽  
Arylene Ether ◽  
Low Dielectric Constant Materials ◽  
Soluble Poly

Soluble poly(arylene ether)s with perfluoro-aromatics and POSS in the main chains exhibited ultra low dielectric constants and hydrophobic properties.

Poly(Arylene Ethers) as Low Dielectric Constant Materials for ULSI Interconnect Applications

1996 ◽  
Vol 443 ◽  
Author(s):  
Raymond N. Vrtis ◽  
Kelly A. Heap ◽  
William F. Burgoyne ◽  
Lloyd M. Robeson
Keyword(s):  
Thermal Stability ◽  
Dielectric Constant ◽  
Moisture Absorption ◽  
Dielectric Material ◽  
Mechanical Analysis ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Arylene Ether ◽  
Low Dielectric Constant Materials ◽  
Excellent Adhesion

AbstractPoly(arylene ethers)s are low dielectric constant organic spin on materials. PAE-2, which is a non-fluorinated poly(arylene ether), exhibits a dielectric constant below 3.0, thermal stability greater than 425 °C as well as excellent adhesion to Si, SiO2, and Al. These are the major atributes which makes it a very attractive candidate for integration as an interlevel or inter-metal dielectric material (ILD). Material properties including dielectric constant, thermal stability, moisture absorption, and mechanical analysis will be discussed.

Pulsed Plasma Synthesis of Low Dielectric Constant Materials

1998 ◽  
Vol 511 ◽  
Author(s):  
Licheng M. Han ◽  
Richard B. Timmons ◽  
Wei W. Lee
Keyword(s):  
Thermal Stability ◽  
Dielectric Constant ◽  
Dielectric Constants ◽  
Low Dielectric Constant ◽  
Plasma Synthesis ◽  
Pulsed Plasma ◽  
Plasma Polymers ◽  
Low Dielectric ◽  
Duty Cycles ◽  
Low Dielectric Constant Materials

ABSTRACTThe utility of a variable duty cycle, pulsed plasma polymerization technique to produce low dielectric constant materials (k < 2.3) is described. The molecular compositions (and thus the dielectric constants) of the plasma polymers are controllable via changes in the plasma duty cycles employed during synthesis, all other reaction variables being held constant. In the present study, this compositional controllability under pulsed conditions is illustrated with two fluoroaromatic monomers. The dielectric constants of the films decrease as the plasma duty cycles employed during polymerization are decreased. Although the as deposited films exhibit relatively poor thermal stability, it was discovered that post-plasma annealing of the films, particularly at 400 °C under N2, provides dramatic improvements in the thermal stability of these materials. Most importantly, this enhanced thermal stability is achieved with relatively minor changes in the dielectric properties of these materials. In fact, synthesis of high thermal stability films having k < 2.0 is demonstrated in this work using the perfluoroaromatic monomer perfluoroallyl benzene.

Organic and Inorganic Spin-On Polymers for Low-Dielectric-Constant Applications

MRS Bulletin ◽  
1997 ◽  
Vol 22 (10) ◽  
pp. 33-38 ◽  
Author(s):  
Nigel P. Hacker
Keyword(s):  
Dielectric Constant ◽  
Integrated Circuit ◽  
Chemical Properties ◽  
Chemical Vapor ◽  
Polymeric Materials ◽  
Dielectric Constants ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Chip Size ◽  
Low Dielectric Constant Materials

Low-dielectric-constant materials (k < 3.0) have the advantage of facilitating manufacture of higher performance integrated-circuit (IC) devices with minimal increases in chip size. The reduced capacitance given by these materials permits shrinkage of spacing between metal lines to below 0.25 μm and the ability to decrease the number of levels of metal in a device. The technologies being considered for low-k applications are chemical vapor deposition (CVD) or spin-on of polymeric materials. For both types of processes, there are methods and materials capable of giving k < 3.0 dielectric stacks. This article will focus on the spin-on approach and discuss the properties of both organic and inorganic spin-on polymers.While CVD SiO2 has been the mainstay of the industry, spin-on materials are appropriate for many dielectric applications. Polyimides have applications as electrical insulators, and traditional spin-on silicates or siloxanes (k > 3.0) have served as planarizing dielectrics during the last 15 years. The newer spin-on polymers have greatly enhanced mechanical, thermal, and chemical properties, exhibiting lower dielectric constants than the traditional materials.

Curing Process Window and Thermal Stability of Porous MSQ-Based Low-Dielectric-Constant Materials

2004 ◽  
Vol 151 (6) ◽  
pp. F146 ◽  
Author(s):  
Shou-Yi Chang ◽  
Tzu-Jen Chou ◽  
Yung-Cheng Lu ◽  
Syun-Ming Jang ◽  
Su-Jien Lin ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Dielectric Constant ◽  
Low Dielectric Constant ◽  
Process Window ◽  
Curing Process ◽  
Low Dielectric ◽  
Low Dielectric Constant Materials ◽  
Thermal Stability Of

Fabrication of low dielectric constant polyimide/TiO2 nanofibers with enhanced UV-light shielding properties

2018 ◽  
Vol 31 (8) ◽  
pp. 986-995
Author(s):  
Lei Wang ◽  
Guifen Gong ◽  
Junyao Shen ◽  
Jinsong Leng
Keyword(s):  
Dielectric Constant ◽  
Light Absorption ◽  
Composite Nanofibers ◽  
Uv Light ◽  
Dielectric Constants ◽  
Low Dielectric Constant ◽  
Number Density ◽  
Tio2 Nanofibers ◽  
Low Dielectric ◽  
Mechanical Tensile

Polyimide (PI)/titanium dioxide (TiO2) composite nanofibers (NFs) with average diameters of 200–250 nm were synthesized via electrospinning. The total number density of dipoles decreased significantly, owing to the porous structures and compact interface between TiO2 NPs and PI matrix. All PI/TiO2 NFs maintain low dielectric constants and losses. For example, the dielectric constants of PI/TiO2-6% NFs are all lower than 2.6, being exposed to temperatures from 25°C to 200°C. Meantime, the dielectric losses of PI/TiO2-6% NFs are below 0.005. For ultraviolet (UV)-light shielding performance, the PI/TiO2 NFs exhibited good UV-light shielding and corresponding anti-photoaging properties. The reason can be ascribed from high UV-light absorption and scattering ability in the TiO2 NPs. The best UV-light absorption (average: 3.71) and corresponding absorption decay (15.13%) were achieved for optimized PI/TiO2-6% NFs. Other fundamental characteristics, such as the thermal stability, mechanical tensile property, and hydrophobicity, were also investigated. Such low dielectric constant PI/TiO2 composite NFs can be alternatively chosen under a longtime UV-light exposing condition.

Low Dielectric Constant Materials for IC Intermetal Dielectric Applications: A Status Report on the Leading Candidates

1996 ◽  
Vol 443 ◽  
Author(s):  
Neil H. Hendricks
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Process Integration ◽  
Electrical Performance ◽  
Low Dielectric Constant ◽  
Status Report ◽  
Structure Property ◽  
Chemical Structures ◽  
Low Dielectric ◽  
Low Dielectric Constant Materials

AbstractFor over two years, intensive efforts at SEMATECH and elsewhere have focused on identifying low dielectric constant (low ε) materials which possess all of the required properties and processing characteristics needed for integration into standard IC fabrication lines. To date, no material candidate has been shown to satisfy this impressive list of requirements. For some candidates, drawbacks related to material properties such as poor thermal stability or electrical performance have been identified; in other cases, problems in process integration, for example difficulties in patterning have stalled progress.In this paper, most of the current leading candidates for the low ε IC IMC application are identified and discussed. An attempt is made to correlate structure/property relationships in these materials with their relative attributes and deficiencies as they relate to the IMD application. Key differences in chemistry and property/processing characteristics are contrasted for low c silicon-oxygen polymers and for purely organic polymers. Novel dielectrics such as porous organic and inorganic thin films are also discussed in terms of their properties and associated process integration challenges. Since the needs for global planarization and low c IMD are occurring within roughly the same generation of minimum feature size (˜ 0.25 μm), the chemical mechanical polishing (CMP) of low dielectric constant thin films and/or of SiO2 layers deposited above them is briefly discussed. Both subtractive metalization and damascene processes are included, and the required low dielectric constant film properties and processing characteristics are contrasted for each process. Finally, the author's views on future trends in low dielectric constant materials development are presented, with an emphasis on identifying the types of chemical structures which may prove viable for this most demanding of all polymer film applications.

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