Colossal dielectric performance of pure barium titanate ceramics consolidated by spark plasma sintering

RSC Advances ◽  
2016 ◽  
Vol 6 (79) ◽  
pp. 75422-75429 ◽  
Author(s):  
X. Yang ◽  
D. Li ◽  
Z. H. Ren ◽  
R. G. Zeng ◽  
S. Y. Gong ◽  
...  

The pure BaTiO3 nanoceramics have a high permittivity up to 6 × 104 and a low dielectric loss. The polaron dipoles configured by oxygen vacancies and Ti3+ cations within grains could contribute to the colossal dielectric permittivity of the ceramics.

2012 ◽  
Vol 602-604 ◽  
pp. 192-196
Author(s):  
Li Ming Wang ◽  
Xiang Yun Deng ◽  
Hai Tao Zhang ◽  
Jian Bao Li ◽  
Di Chen ◽  
...  

Barium titanate (BaTiO3) ceramics with grain size varied from 1000 to 8 nm were prepared by two step sintering method (TSS) and spark plasma sintering (SPS), respectively. Mixture structures of BaTiO3 ceramics were proved by in-situ temperature high resolution x-ray diffraction. Multiple ferroelectric domains present in nano-crystalline BaTiO3 ceramics were observed by transmission electron microscope. The evolution of phase transitions supported the existence of intrinsic mechanism. Dielectric loss of fine grain size BaTiO3 was higher than coarse grain size during Curie phase transition due to diffuse phase transition and grain boundary effects.


2014 ◽  
Vol 602-603 ◽  
pp. 700-704
Author(s):  
Min Jia Wang ◽  
Qi Long Zhang ◽  
Xin Hui Zhao ◽  
Hui Yang

Multilayer ceramic capacitors (MLCC) are important functional components of electronic information technology. The development of AC MLCC requires low dielectric loss and high AC breakdown voltage. In this paper, Y-Al-Ga-Si co-doped barium titanate ceramics were prepared by conventional solid state method. Microstructures, surface morphology and dielectric properties were investigated by X-ray diffraction, SEM, and LCR analyzer, respectively. Y3+ entered into the lattice of BaTiO3, replaced A-sites and B-sites, suppressed grain growth effectively, and made crystal structure change from tetragonal to pseudo-cubic, which reduced dielectric loss and lowered the Curie peak. The sintering characteristic and permittivity can be improved by the incorporation of Al and Ga. BaTiO3 -0.06Y2O3 - 0.02Ga2O3 -0.01Al2O3 -0.01SiO2 ceramics sintered at 1380°C achieved good dielectric properties: εr= ~2223, tanδ =~1.1% (at 1kHz), ΔC/C25 <~15.26% (from 55°C to 150°C).


2006 ◽  
Vol 89 (3) ◽  
pp. 1059-1064 ◽  
Author(s):  
Xiangyun Deng ◽  
Xiaohui Wang ◽  
Hai Wen ◽  
Aiguo Kang ◽  
Zhilun Gui ◽  
...  

2014 ◽  
Vol 2 (4) ◽  
pp. 683-690 ◽  
Author(s):  
Romain Berthelot ◽  
Brice Basly ◽  
Sonia Buffière ◽  
Jérôme Majimel ◽  
Geoffroy Chevallier ◽  
...  

2016 ◽  
Vol 42 (14) ◽  
pp. 15989-15993 ◽  
Author(s):  
Pavel Ctibor ◽  
Josef Sedlacek ◽  
Vasyl Ryukhtin ◽  
Jakub Cinert ◽  
Frantisek Lukac

Nanomaterials ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 2506
Author(s):  
Liren Zheng ◽  
Mu Liu ◽  
Haipeng Zhang ◽  
Zhaoke Zheng ◽  
Zeyan Wang ◽  
...  

ZnO, as an important semiconductor material, has attracted much attention due to its excellent physical properties, which can be widely used in many fields. Notably, the defects concentration and type greatly affect the intrinsic properties of ZnO. Thus, controllable adjustment of ZnO defects is particularly important for studying its photoelectric properties. In this work, we fabricated ZnO ceramics (ZnO(C)) with different defects through spark plasma sintering (SPS) process by varying sintering temperature and using reduction environment. The experimental results indicate that the changes of color and light absorption in as-prepared ZnO originate from the different kinds of defects, i.e., oxygen vacancies (VO), interstitial zinc (Zni), and Zinc vacancies (VZn). Moreover, with the increase in calcination temperature, the concentration of oxygen defects and interstitial zinc defects in the ceramics increases gradually, and the conductivity of the ceramics is also improved. However, too many defects are harmful to the photoelectrochemical properties of the ceramics, and the appropriate oxygen defects can improve the utilization of visible light.


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