Modulation of doping and biaxial strain on the transition temperature of the charge density wave transition in 1T-TiSe2

RSC Advances ◽  
2016 ◽  
Vol 6 (80) ◽  
pp. 76972-76979 ◽  
Author(s):  
Zhen-Guo Fu ◽  
Zi-Yu Hu ◽  
Yu Yang ◽  
Yong Lu ◽  
Fa-Wei Zheng ◽  
...  
Keyword(s):  
Transition Temperature ◽  
Charge Density ◽  
Charge Density Wave ◽  
Density Wave ◽  
Biaxial Strain ◽  
Charge Doping

We study the effects of charge doping and biaxial strains on the transition temperature of charge density wave (CDW) transition in TiSe2.

Charge-density-wave tuning in monolayer 1H-TaSe2by biaxial strain and charge doping

2019 ◽  
Vol 127 (3) ◽  
pp. 37001
Author(s):  
J. G. Si ◽  
M. J. Wei ◽  
H. Y. Wu ◽  
R. C. Xiao ◽  
W. J. Lu
Keyword(s):  
Charge Density ◽  
Charge Density Wave ◽  
Density Wave ◽  
Biaxial Strain ◽  
Charge Doping

Thickness dependence of the charge-density-wave transition temperature in VSe2

2014 ◽  
Vol 105 (6) ◽  
pp. 063109 ◽  
Author(s):  
Jiyong Yang ◽  
Weike Wang ◽  
Yan Liu ◽  
Haifeng Du ◽  
Wei Ning ◽  
...  
Keyword(s):  
Transition Temperature ◽  
Charge Density ◽  
Charge Density Wave ◽  
Density Wave ◽  
Thickness Dependence

scholarly journals Robust charge-density wave strengthened by electron correlations in monolayer 1T-TaSe2 and 1T-NbSe2

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Yuki Nakata ◽  
Katsuaki Sugawara ◽  
Ashish Chainani ◽  
Hirofumi Oka ◽  
Changhua Bao ◽  
...  
Keyword(s):  
Transition Temperature ◽  
Charge Density ◽  
Electron Correlation ◽  
Charge Density Wave ◽  
Room Temperature ◽  
High Temperature Superconductivity ◽  
Density Wave ◽  
Mott Insulator ◽  
Transition Metal Dichalcogenide ◽  
A Charge

AbstractCombination of low-dimensionality and electron correlation is vital for exotic quantum phenomena such as the Mott-insulating phase and high-temperature superconductivity. Transition-metal dichalcogenide (TMD) 1T-TaS2 has evoked great interest owing to its unique nonmagnetic Mott-insulator nature coupled with a charge-density-wave (CDW). To functionalize such a complex phase, it is essential to enhance the CDW-Mott transition temperature TCDW-Mott, whereas this was difficult for bulk TMDs with TCDW-Mott < 200 K. Here we report a strong-coupling 2D CDW-Mott phase with a transition temperature onset of ~530 K in monolayer 1T-TaSe2. Furthermore, the electron correlation derived lower Hubbard band survives under external perturbations such as carrier doping and photoexcitation, in contrast to the bulk counterpart. The enhanced Mott-Hubbard and CDW gaps for monolayer TaSe2 compared to NbSe2, originating in the lattice distortion assisted by strengthened correlations and disappearance of interlayer hopping, suggest stabilization of a likely nonmagnetic CDW-Mott insulator phase well above the room temperature. The present result lays the foundation for realizing monolayer CDW-Mott insulator based devices operating at room temperature.

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