Nanostructure of the rust formed on low alloy steels after exposure tests in a high SOx environment

RSC Advances ◽  
2016 ◽  
Vol 6 (110) ◽  
pp. 108876-108882
Author(s):  
T. Nishimura
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Raman Spectroscopy ◽  
Low Alloy Steels ◽  
Transmission Electron ◽  
Alloy Steels ◽  
Tem Transmission Electron Microscopy

Exposure tests were performed on low alloy steels in a high SOx environment, and the structure of the rust was analyzed by TEM (Transmission Electron Microscopy) and Raman spectroscopy.

The Development of Interphase Precipitated Nanometre-Sized Carbides in the Advanced Low-Alloy Steels

2013 ◽  
Vol 762 ◽  
pp. 95-103 ◽  
Author(s):  
Jer Ren Yang ◽  
H.W. Yen ◽  
C.Y. Chen ◽  
C.Y. Huang
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Random Distribution ◽  
Bearing Steel ◽  
Low Alloy Steels ◽  
Interphase Precipitation ◽  
Orowan Mechanism ◽  
Transmission Electron ◽  
Alloy Steels ◽  
Ledge Mechanism

In this work, the investigation of transmission electron microscopy has elucidated the morphologies of the interphase precipitated carbides in an experimental Ti-Mo-bearing steel into three types: (1) planar interphase precipitation with regular sheet spacing (designated as PIP), (2) curved interphase precipitation with regular sheet spacing (designated as Regular CIP), and (3) curved interphase precipitation with irregular sheet spacing (designated as Irregular CIP). The planar sheets of carbides have also been analyzed and found to be oriented close to ferrite planes {211}, {210} and {111}; the results of transmission electron microscopy provide strong evidence to suggest that the development of interphase-precipitated carbides can be associated with the growth of incoherent ferrite/austenite interface by the ledge mechanism. The sheet spacing and inter-carbide spacing in the sheet have been measured and estimated in this work. The sheet spacing is found to be finer than the inter-carbide spacing in the sheet for all samples investigated. The result reflects that the distribution of interphase-precipitated carbides is anisotropic and cannot be considered random distribution. The relevance of the Orowan mechanism to the non-random distribution of interphase-precipitated carbides has been considered. The contribution of the dispersion of interphase-precipitated carbides to the yield strength of the steel studied has been estimated. It is revealed that an optimum component about 400 MPa contributed by interphase-precipitated carbides can be achieved, and the finding is consistent with the hardness data. Other examples of the different alloy steels are also addressed.

Study of the Ion-Irradiation Behavior of Advanced SiC Fibers by Raman Spectroscopy and Transmission Electron Microscopy

2014 ◽  
Vol 98 (2) ◽  
pp. 675-682 ◽  
Author(s):  
Juan Huguet-Garcia ◽  
Aurélien Jankowiak ◽  
Sandrine Miro ◽  
Dominique Gosset ◽  
Yves Serruys ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Raman Spectroscopy ◽  
Ion Irradiation ◽  
Sic Fibers ◽  
Transmission Electron ◽  
Irradiation Behavior

scholarly journals Thermal Annealing of High Dose P Implantation in 4H-SiC

2019 ◽  
Vol 963 ◽  
pp. 399-402 ◽  
Author(s):  
Cristiano Calabretta ◽  
Massimo Zimbone ◽  
Eric G. Barbagiovanni ◽  
Simona Boninelli ◽  
Nicolò Piluso ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Raman Spectroscopy ◽  
Ion Implantation ◽  
Epitaxial Layer ◽  
Point Defects ◽  
High Dose ◽  
Double Step ◽  
Post Annealing ◽  
Transmission Electron

In this work, we have studied the crystal defectiveness and doping activation subsequent to ion implantation and post-annealing by using various techniques including photoluminescence (PL), Raman spectroscopy and transmission electron microscopy (TEM). The aim of this work was to test the effectiveness of double step annealing to reduce the density of point defects generated during the annealing of a P implanted 4H-SiC epitaxial layer. The outcome of this work evidences that neither the first 1 hour isochronal annealing at 1650 - 1700 - 1750 °C, nor the second one at 1500 °C for times between 4 hour and 14 hour were able to recover a satisfactory crystallinity of the sample and achieve dopant activations exceeding 1%.

Study of Triangle-Shaped Defects on Nearly On-Axis 4H-SiC Substrates

2016 ◽  
Vol 858 ◽  
pp. 225-228 ◽  
Author(s):  
Ren Wei Zhou ◽  
Xue Chao Liu ◽  
Hui Jun Guo ◽  
H.K. Kong ◽  
Er Wei Shi
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Raman Spectroscopy ◽  
High Resolution ◽  
Optical Microscopy ◽  
Epitaxial Growth ◽  
Surface Defects ◽  
Micro Raman Spectroscopy ◽  
Transmission Electron

Triangle-shaped defects are one of the most common surface defects on epitaxial growth of 4H-SiC epilayer on nearly on-axis SiC substrate. In this paper, we investigate the feature and structure of such defects using Nomarski optical microscopy (NOM), micro-Raman spectroscopy and high resolution transmission electron microscopy (HR-TEM). It is found that triangle-shaped defects were composed of a thick 3C-SiC polytype, as well as 4H-SiC epilayer.

Sign in / Sign up

Export Citation Format

Share Document