Highly energetic flexible all-solid-state asymmetric supercapacitor with Fe2O3 and CuO thin films

RSC Advances ◽  
2016 ◽  
Vol 6 (63) ◽  
pp. 58839-58843 ◽  
Author(s):  
Abhijeet V. Shinde ◽  
Nilesh R. Chodankar ◽  
Vaibhav C. Lokhande ◽  
Abhishek C. Lokhande ◽  
Taeksoo Ji ◽  
...  

Figure shows (A) XRD pattern of Fe2O3 thin film, (B and C) FE-SEM images of Fe2O3 thin film, (D) XRD pattern of CuO thin film and (E and F) FE-SEM images of CuO thin film.

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1494
Author(s):  
Mustapha El Hariri El Nokab ◽  
Khaled O. Sebakhy

Solid-state NMR has proven to be a versatile technique for studying the chemical structure, 3D structure and dynamics of all sorts of chemical compounds. In nanotechnology and particularly in thin films, the study of chemical modification, molecular packing, end chain motion, distance determination and solvent-matrix interactions is essential for controlling the final product properties and applications. Despite its atomic-level research capabilities and recent technical advancements, solid-state NMR is still lacking behind other spectroscopic techniques in the field of thin films due to the underestimation of NMR capabilities, availability, great variety of nuclei and pulse sequences, lack of sensitivity for quadrupole nuclei and time-consuming experiments. This article will comprehensively and critically review the work done by solid-state NMR on different types of thin films and the most advanced NMR strategies, which are beyond conventional, and the hardware design used to overcome the technical issues in thin-film research.


2013 ◽  
Vol 27 (22) ◽  
pp. 1350156 ◽  
Author(s):  
R. J. ZHU ◽  
Y. REN ◽  
L. Q. GENG ◽  
T. CHEN ◽  
L. X. LI ◽  
...  

Amorphous V 2 O 5, LiPON and Li 2 Mn 2 O 4 thin films were fabricated by RF magnetron sputtering methods and the morphology of thin films were characterized by scanning electron microscopy. Then with these three materials deposited as the anode, solid electrolyte, cathode, and vanadium as current collector, a rocking-chair type of all-solid-state thin-film-type Lithium-ion rechargeable battery was prepared by using the same sputtering parameters on stainless steel substrates. Electrochemical studies show that the thin film battery has a good charge–discharge characteristic in the voltage range of 0.3–3.5 V, and after 30 cycles the cell performance turned to become stabilized with the charge capacity of 9 μAh/cm2, and capacity loss of single-cycle of about 0.2%. At the same time, due to electronic conductivity of the electrolyte film, self-discharge may exist, resulting in approximately 96.6% Coulombic efficiency.


2018 ◽  
Vol 53 ◽  
pp. 01008
Author(s):  
Feihu Tan ◽  
XiaoPing Liang ◽  
Feng Wei ◽  
Jun Du

The amorphous LiPON thin film was obtained by using the crystalline Li3PO4 target and the RF magnetron sputtering method at a N2 working pressure of 1 Pa. and then the morphology and composition of LiPON thin films are analysed by SEM and EDS. SEM shows that the film was compact and smooth, while EDS shows that the content of N in LiPON thin film was about 17.47%. The electrochemical properties of Pt/LiPON/Pt were analysed by EIS, and the ionic conductivity of LiPON thin films was 3.8×10-7 S/cm. By using the hard mask in the magnetron sputtering process, the all-solid-state thin film battery with Si/Ti/Pt/LiCoO2/LiPON/Li4Ti5O12/Pt structure was prepared, and its electrical properties were studied. As for this thin film battery, the open circuit voltage was 1.9 V and the first discharge specific capacity was 34.7 μAh/cm2·μm at a current density of 5 μA/cm-2, indicating that is promising in all-solidstate thin film batteries.


2016 ◽  
Vol 2016 ◽  
pp. 1-31 ◽  
Author(s):  
G. Korotcenkov ◽  
V. Brinzari ◽  
B. K. Cho

The paper considers SnO2and In2O3thin films as materials for the design of solid-state conductometric ozone sensors in depth. In particular, the present review covers the analysis of the fundamentals of SnO2- and In2O3-based conductometric ozone sensor operation. The main focus is on the description of mechanisms of ozone interaction with metal oxides, the influence of air humidity on sensor response, and processes that control the kinetics of sensor response to ozone.


2018 ◽  
Vol 17 (03) ◽  
pp. 1760037 ◽  
Author(s):  
A. Nancy Anna Anasthasiya ◽  
K. Gowtham ◽  
R. Shruthi ◽  
R. Pandeeswari ◽  
B. G. Jeyaprakash

The spray pyrolysis technique was employed to deposit V2O5 thin films on a glass substrate. By varying the precursor solution volume from 10[Formula: see text]mL to 50[Formula: see text]mL in steps of 10[Formula: see text]mL, films of various thicknesses were prepared. Orthorhombic polycrystalline V2O5 films were inferred from the XRD pattern irrespective of precursor solution volume. The micro-Raman studies suggested that annealed V2O5 thin film has good crystallinity. The effect of precursor solution volume on morphological and optical properties were analysed and reported.


2002 ◽  
Vol 730 ◽  
Author(s):  
A. Nuñez Rodriguez ◽  
M.T.S. Nair ◽  
P.K. Nair

AbstractAg2S thin films of 90 nm to 300 nm in thickness were deposited at 70°C on glass substrates immersed in a bath mixture containing silver nitrate, sodium thiosulfate and dimethylthiourea. When the films are heated in nitrogen at temperatures 200°C to 400°C, crystallinity is improved and XRD pattern similar to that of acanthite is observed. These films possess electrical conductivity of 10-3 (ohm cm)-1, are photoconductive and exhibit an optical band gap of 1.36 eV. When Ag2S thin film is deposited over a thin film of Bi2S3, also obtained by chemical bath deposition from bismuth nitrate, triethanolamine and thioacetamide, and heated at 300°C to 400°C in nitrogen, a ternary compound, AgBiS2 is formed. This material has an electrical conductivity of 5x10-5 (ohm cm)-1, is photoconductive and possesses optical band gap 0.95 eV.


Coatings ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 136
Author(s):  
Ping Tang ◽  
Weimin Wang ◽  
Bing Li ◽  
Lianghuan Feng ◽  
Guanggen Zeng

Aluminum antimony (AlSb) is a promising photovoltaic material with a band gap of about 1.62 eV. However, AlSb is highly deliquescent and not stable, which has brought great difficulties to the applications. Based on the above situation, there are two purposes for preparing our Zn-doped AlSb (AlSb:Zn) thin films: One is to make P-type AlSb and the other is to find a way to suppress the deliquescence of AlSb. The AlSb:Zn thin films were prepared on glass substrates at different substrate temperatures by using the pulsed laser deposition (PLD) method. The structural, surface morphological, optical, and electrical properties of AlSb:Zn films were investigated. The crystallization of AlSb:Zn thin films was enhanced and the electrical resistivity decreased as the substrate temperature increased. The scanning electron microscopy (SEM) images indicated that the grain sizes became bigger as the substrate temperatures increased. The Raman vibration mode AlSb:Zn films were located at ~107 and ~142 cm−1 and the intensity of Raman peaks was stronger at higher substrate temperatures. In the experiment, a reduced band gap (1.4 eV) of the AlSb:Zn thin film was observed compared to the undoped AlSb films, which were more suitable for thin-film solar cells. Zn doping could reduce the deliquescent speed of AlSb thin films. The fabricated heterojunction device showed the good rectification behavior, which indicated the PN junction formation. The obvious photovoltaic effect has been observed in an FTO/ZnS/AlSb:Zn/Au device.


2017 ◽  
Vol 8 (4) ◽  
pp. 3126-3136 ◽  
Author(s):  
Sachin R. Chaudhari ◽  
John M. Griffin ◽  
Katharina Broch ◽  
Anne Lesage ◽  
Vincent Lemaur ◽  
...  

DPP-DTT adopts a donor-on-acceptor stacking arrangement which is preserved in thin films.


2013 ◽  
Vol 734-737 ◽  
pp. 2391-2394
Author(s):  
Qing Yun Lin ◽  
Ping Fan ◽  
Jing Ting Luo ◽  
Zhuang Hao Zheng ◽  
Ying Zhen Li ◽  
...  

Ti doped aluminum zinc oxide thin film was prepared by DC reaction magnetron sputtering method on the transparent glass substrates. The structure and thermoelectric performance of the deposited (TAZO) thin films are studied by various methods. XRD pattern shows that the TAZO thin film exhibits hexagonal wurtzite structure. After Ti-doping, the thermoelectric properties of TAZO thin film significantly improved at room temperature. The TAZO thin film has the maximum conductivity of 8.33×104 S/m and the Seebeck coefficient absolute value of 34 μV/K, which is respectively larger than that of the corresponding values.


2001 ◽  
Vol 101 (1) ◽  
pp. 126-129 ◽  
Author(s):  
Y.S Yoon ◽  
W.I Cho ◽  
J.H Lim ◽  
D.J Choi

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