Monitoring the doping of graphene on SiO2/Si substrates during the thermal annealing process

RSC Advances ◽  
2016 ◽  
Vol 6 (76) ◽  
pp. 72859-72864 ◽  
Author(s):  
S. D. Costa ◽  
J. Ek Weis ◽  
O. Frank ◽  
M. Fridrichová ◽  
M. Kalbac
Keyword(s):  
Thermal Annealing ◽  
Annealing Process ◽  
Raman Peak ◽  
Cvd Graphene ◽  
Si Substrates ◽  
Thermal Annealing Process ◽  
Compression Level

It is the temperature of annealing after the transfer of CVD graphene influencing the doping and compression level, and thus the various Raman peak positions reported in the literature.

Electroplating of ZnO Nanowires Using Nanohole Arrays of Anodized Aluminum Oxide and Effects of Thermal Annealing

2006 ◽  
Vol 957 ◽  
Author(s):  
Ken-Ichi Ogata ◽  
Shoso Shingubara ◽  
Hiromi Yorozu ◽  
Tadahiko Nakanishi
Keyword(s):  
Aluminum Oxide ◽  
Thermal Annealing ◽  
Hexagonal Structure ◽  
Annealing Process ◽  
Zno Nanowires ◽  
Anodized Aluminum ◽  
Anodized Aluminum Oxide ◽  
Si Substrates ◽  
Nanohole Arrays ◽  
Thermal Annealing Process

ABSTRACTElectroplating of ZnO nanowires was conducted using gold embedded anodized aluminum oxide (AAO) films on Si substrates. For electroplating, insulating layers at the bottom of AAO nanohole structures need to be removed. After electroplating, hexagonal structure of vertical ZnO nanowires was observed, however, they were broken and lied down by thermal annealing process. Photoluminescence (PL) spectra were investigated and that of post annealed ZnO nanowires indicates that nitrogen atoms were incorporated as acceptor.

Hydrogen Behavior in PECVD Nitride by SiH4 & ND3 During RTA

1996 ◽  
Vol 424 ◽  
Author(s):  
S. S. He ◽  
V. L. Shannon ◽  
T. Nguyen
Keyword(s):  
Silicon Nitride ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Process ◽  
Rapid Thermal Annealing Process ◽  
Wave Numbers ◽  
Thermal Annealing Process

AbstractPECVD silicon nitride was deposited by silane and deuterium ammonia. Silicon rich and nitrogen rich silicon nitride were deposited by varying the ratio of the SiH4/DH3. From FTIR, we found that the wave numbers of SiD and ND shifted lower when compared to SiH and NH bond in the NH3 nitride. In Si-rich nitride, both Si-H and Si-D bonds were found, which is different from N-rich nitride, where only an ND bond was found. Most of the hydrogen in NH(D) comes from the ammonia during PECVD deposition. We found that some of the deuterium exchanges its bonding to silicon from the initial bonding to nitrogen during a rapid thermal annealing process.

scholarly journals Understanding the thermal annealing process on metallic thin films

2013 ◽  
Vol 45 ◽  
pp. 012013 ◽  
Author(s):  
G M Alonzo-Medina ◽  
A González-González ◽  
J L Sacedón ◽  
A I Oliva
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Annealing Process ◽  
Metallic Thin Films ◽  
Thermal Annealing Process
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