Effect of doping indium into a Bi2Te3 matrix on the microstructure and thermoelectric transport properties

RSC Advances ◽  
2016 ◽  
Vol 6 (65) ◽  
pp. 60736-60740 ◽  
Author(s):  
Xin Guo ◽  
Jieming Qin ◽  
Xiaoling Lv ◽  
Le Deng ◽  
Xiaopeng Jia ◽  
...  

Doping In into a Bi2Te3 matrix can significantly transform textural features and decrease the lattice thermal conductivity.

1998 ◽  
Vol 545 ◽  
Author(s):  
V. M. Browning ◽  
S. J. Poon ◽  
T. M. Tritt ◽  
A. L Pope ◽  
S. Bhattacharya ◽  
...  

AbstractRecent measurements of the thermoelectric transport properties of a series of the half- Heusler compound ZrNiSn are presented. These materials are known to be bandgap intermetallic compounds with relatively large Seebeck coefficients and semimetallic to semiconducting transport properties. This makes them attractive for study as potential candidates for thermoelectric applications. In this study, trends in the thermoelectric power, electrical conductivity and thermal conductivity are examined as a function of chemical substitution on the various fcc sub-lattices that comprise the half-Heusler crystal structure. These results suggest that the lattice contribution to the thermal conductivity may be reduced by increasing the phonon scattering via chemical substitution. The effects of these substitutions on the overall power factor and figure-of-merit will also be discussed.


Materials ◽  
2020 ◽  
Vol 13 (9) ◽  
pp. 2164
Author(s):  
Kota Morino ◽  
Yosuke Goto ◽  
Akira Miura ◽  
Chikako Moriyoshi ◽  
Yoshihiro Kuroiwa ◽  
...  

We report the synthesis and thermoelectric transport properties of As-doped layered pnictogen oxyselenides NdO0.8F0.2Sb1−xAsxSe2 (x ≤ 0.6), which are predicted to show high-performance thermoelectric properties based on first-principles calculation. The crystal structure of these compounds belongs to the tetragonal P4/nmm space group (No. 129) at room temperature. The lattice parameter c decreases with increasing x, while a remains almost unchanged among the samples. Despite isovalent substitution of As for Sb, electrical resistivity significantly rises with increasing x. Very low thermal conductivity of less than 0.8 Wm−1K−1 is observed at temperatures between 300 and 673 K for all the examined samples. For As-doped samples, the thermal conductivity further decreases above 600 K. Temperature-dependent synchrotron X-ray diffraction indicates that an anomaly also occurs in the c-axis length at around 600 K, which may relate to the thermal transport properties.


2019 ◽  
Author(s):  
Xuegao Hu ◽  
Wenke He ◽  
Dongyang Wang ◽  
Zhiwei Huang ◽  
Li-Dong Zhao

Author(s):  
Qingyu Bai ◽  
Xinyue Zhang ◽  
Bing Shan ◽  
Xuemin Shi ◽  
Cheng Sun ◽  
...  

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