Effect of temperature and alloying elements (Fe and Bi) on the electrical resistivity of Sn–0.7Cu solder alloy

RSC Advances ◽  
2016 ◽  
Vol 6 (63) ◽  
pp. 58010-58019 ◽  
Author(s):  
Hasan Abbas Jaffery ◽  
Mohd Faizul Mohd Sabri ◽  
Shaifulazuar Rozali ◽  
Mohammad Hossein Mahdavifard ◽  
Dhafer Abdulameer Shnawah

The addition of Fe/Bi decrease the atomic percent of Sn4+, thus effect the electrical resistivity of the solder alloy.

Langmuir ◽  
2019 ◽  
Vol 35 (26) ◽  
pp. 8709-8715 ◽  
Author(s):  
Shiju Abraham ◽  
Tabea Heckenthaler ◽  
Yakov Morgenstern ◽  
Yair Kaufman

1984 ◽  
Vol 39 ◽  
Author(s):  
R. K. Williams ◽  
R. S. Graves ◽  
F. J. Weaver ◽  
D. L. McElroy

ABSTRACTThermal conductivity, electrical resistivity, Seebeck coefficient and thermal expansion data were obtained on well-annealed Ni3Al containing 24 and 25 at. % Al. The results span the temperature range 300 to 1000 K. The expansion coefficients did not vary with composition and increased with temperature, reaching values of aIout 17 × 10−6 K−1 at 1000 K. The thermal conductivity and electrical resistivity changed rapidly with composition, and the thermal conductivity of 24 at. % Al is as much as 30% lower than that for stoichiometric Ni3A1. The electronic Lorenz function of Ni3Al was obtained by subtracting the estimated phonon conductivity component and found to be within about 5% of the Sommerfeld prediction from 300 to 1000 K. The electrical resistivity results for stoichiometric Ni 3Al are influenced by the loss of ferromagnetic order at lower temperatures and are not adequately described by the Bloch-Grüneisen equation.


2003 ◽  
Vol 793 ◽  
Author(s):  
Min Wook Oh ◽  
Jia-Jun Gu ◽  
Kosuke Kuwabara ◽  
Haruyuki Inui

ABSTRACTS:The thermoelectric properties as well as microstructure of binary and some ternary ReSi1.75 have been investigated. Binary ReSi1.75 exhibits a nice thermoelectric property as exemplified by the high value of dimensionless figure of merit (ZT) of 0.70 at 800 °C when measured along [001], although the ZT value along [100] is just moderately high. Mo substitution for Re in ReSi1.75 considerably increases the ZT value along [001] because of the decreased electrical resistivity, while the property improvement is not significant along [100]. On the other hand, Al and Ge substitutions for Si in ReSi1.75 considerably increase the ZT value along [100]. This is also because of the decreased electrical resistivity. When Al is added to ReSi1.75, the value of electrical resistivity is significantly reduced when compared to the binary counterpart and the temperature dependence of electrical resistivity changes from of semiconductor for the binary alloy to of metal for the Al-added alloys.


Sign in / Sign up

Export Citation Format

Share Document