The effect of small pyramid texturing on the enhanced passivation and efficiency of single c-Si solar cells

RSC Advances ◽  
2016 ◽  
Vol 6 (55) ◽  
pp. 49831-49838 ◽  
Author(s):  
Minkyu Ju ◽  
Nagarajan Balaji ◽  
Cheolmin Park ◽  
Huong Thi Thanh Nguyen ◽  
Jian Cui ◽  
...  
Keyword(s):  
Solar Cells ◽  
Surface Passivation ◽  
Si Solar Cells ◽  
P Type

In this work, small random pyramid texturing (0.5–2 μm size) was generated with chemical nano-masking, to enhance the surface passivation of commercial p-type Cz-Si wafers.

Surface Passivation for Si Solar Cells: A Combination of Advanced Surface Cleaning and Thermal Atomic Layer Deposition of Al2O3

2012 ◽  
Vol 187 ◽  
pp. 357-361 ◽  
Author(s):  
Bart Vermang ◽  
Aude Rothschild ◽  
Karine Kenis ◽  
Kurt Wostyn ◽  
Twan Bearda ◽  
...  
Keyword(s):  
Solar Cells ◽  
Atomic Layer Deposition ◽  
Surface Passivation ◽  
Atomic Layer ◽  
Surface Cleaning ◽  
Hydrophilic Surface ◽  
Hot Air ◽  
Si Solar Cells ◽  
Layer Deposition ◽  
P Type

Thermal atomic layer deposition (ALD) of Al2O3 provides an adequate level of surface passivation for both p-type and n-type Si solar cells. To obtain the most qualitative and uniform surface passivation advanced cleaning development is required. The studied pre-deposition treatments include an HF (Si-H) or oxidizing (Si-OH) last step and finish with simple hot-air drying or more sophisticated Marangoni drying. To examine the quality and uniformity of surface passivation - after cleaning and Al2O3 deposition - carrier density imaging (CDI) and quasi-steady-state photo-conductance (QSSPC) are applied. A hydrophilic surface clean that leads to improved surface passivation level is found. Si-H starting surfaces lead to equivalent passivation quality but worse passivation uniformity. The hydrophilic surface clean is preferred because it is thermodynamically stable, enables higher and more uniform ALD growth and consequently exhibits better surface passivation uniformity.

Al2O3/SiON stack layers for effective surface passivation and anti-reflection of high efficiency n-type c-Si solar cells

2017 ◽  
Vol 32 (2) ◽  
pp. 025005 ◽  
Author(s):  
Huong Thi Thanh Nguyen ◽  
Nagarajan Balaji ◽  
Cheolmin Park ◽  
Nguyen Minh Triet ◽  
Anh Huy Tuan Le ◽  
...  
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
Surface Passivation ◽  
Effective Surface ◽  
Si Solar Cells ◽  
Type C

Boron liquid solution deposited by spray method for p-type emitter formation in crystalline Si solar cells

2016 ◽  
Author(s):  
Piotr Panek ◽  
Barbara Swatowska ◽  
Wojciech Dawidowski ◽  
Mari Juel ◽  
Paweł Zięba
Keyword(s):  
Solar Cells ◽  
Liquid Solution ◽  
Si Solar Cells ◽  
Spray Method ◽  
P Type

IMPACT OF WIDE BANDGAP P-TYPE NC-SI ON THE PERFORMANCE OF A-SI SOLAR CELLS

2002 ◽  
Vol 16 (01n02) ◽  
pp. 57-63 ◽  
Author(s):  
X. DENG ◽  
W. WANG ◽  
S. HAN ◽  
H. POVOLNY ◽  
W. DU ◽  
...  
Keyword(s):  
Solar Cells ◽  
Density Functional ◽  
Nanocrystalline Silicon ◽  
Functional Approach ◽  
Wide Bandgap ◽  
Quantum Size ◽  
Si Solar Cells ◽  
P Type ◽  
The Impact ◽  
Hydrogenated Amorphous

This paper reports the impact of a wide bandgap p-type hydrogenated nanocrystalline silicon (nc-Si:H) on the performances of hydrogenated amorphous silicon (a-Si:H) based solar cells. The p-layer consists of nanometer-sized Si Crystallites and has a wide effective bandgap determined mainly by the quantum size-confinement effect (QSE). By incorporation of this p-layer into the devices we have obtained high performances of a-Si:H top solar cells with V oc = 1.045 V and FF = 70.3%, and much improved mid and bottom a-SiGe:H cells, deposited on stainless steel (SS) substrate. The effects of the band-edge mismatch at the p/i-interface on the I-V characteristics of the solar cells are discussed on the bases on the bases of the density-functional approach and the AMPS model.

N-type and P-type C-SI surface passivation by remote PECVD AlOx for solar cells

2010 ◽  
Author(s):  
Quanyuan Shang ◽  
Walter Seaman ◽  
Mike Whitney ◽  
Mark George ◽  
John Madocks ◽  
...  
Keyword(s):  
Solar Cells ◽  
Surface Passivation ◽  
Type C ◽  
P Type

Numerical simulations of hole carrier selective contacts in p-type c-Si solar cells

2019 ◽  
Vol 200 ◽  
pp. 109937 ◽  
Author(s):  
Paul Procel ◽  
Philipp Löper ◽  
Felice Crupi ◽  
Christophe Ballif ◽  
Andrea Ingenito
Keyword(s):  
Solar Cells ◽  
Numerical Simulations ◽  
Si Solar Cells ◽  
Type C ◽  
P Type

Surface Passivation of c-Si by Nanoengineered AlOx toward Low-Cost, High-Efficiency c-Si Solar Cells

2014 ◽  
Author(s):  
H. Lee ◽  
N. Sawamoto ◽  
K. Ueda ◽  
Y. Enomoto ◽  
K. Arafune ◽  
...  
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
Surface Passivation ◽  
Low Cost ◽  
Si Solar Cells
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