Wide-range work-function tuning of active graphene transparent electrodes via hole doping

RSC Advances ◽  
2016 ◽  
Vol 6 (39) ◽  
pp. 32746-32756 ◽  
Author(s):  
Jheng-Yuan Syu ◽  
Yu-Min Chen ◽  
Kai-Xiang Xu ◽  
Shih-Ming He ◽  
Wu-Ching Hung ◽  
...  
Keyword(s):  
Work Function ◽  
Hole Doping ◽  
Transparent Electrodes ◽  
Wide Range ◽  
Work Function Tuning ◽  
Via Hole ◽  
Novel Strategy ◽  
Transparent Conductive Electrodes

A novel strategy for preparing active transparent conductive electrodes by doping LBL-stacked graphene with AuCl3, successfully achieving an extremely wide range of work-function tunability of up to ~1.5 eV.

scholarly journals Advanced Graphene-Based Transparent Conductive Electrodes for Photovoltaic Applications

Micromachines ◽  
2019 ◽  
Vol 10 (6) ◽  
pp. 402 ◽  
Author(s):  
Susana Fernández ◽  
Alberto Boscá ◽  
Jorge Pedrós ◽  
Andrea Inés ◽  
Montserrat Fernández ◽  
...  
Keyword(s):  
Thin Films ◽  
Strong Dependence ◽  
Transparent Conductive Oxide ◽  
Electrical Performance ◽  
Transparent Electrodes ◽  
Surface Reflection ◽  
Wide Range ◽  
Cell Front ◽  
Additional Role ◽  
Transparent Conductive Electrodes

New architectures of transparent conductive electrodes (TCEs) incorporating graphene monolayers in different configurations have been explored with the aim to improve the performance of silicon-heterojunction (SHJ) cell front transparent contacts. In SHJ technology, front electrodes play an important additional role as anti-reflectance (AR) coatings. In this work, different transparent-conductive-oxide (TCO) thin films have been combined with graphene monolayers in different configurations, yielding advanced transparent electrodes specifically designed to minimize surface reflection over a wide range of wavelengths and angles of incidence and to improve electrical performance. A preliminary analysis reveals a strong dependence of the optoelectronic properties of the TCEs on (i) the order in which the different thin films are deposited or the graphene is transferred and (ii) the specific TCO material used. The results shows a clear electrical improvement when three graphene monolayers are placed on top on 80-nm-thick ITO thin film. This optimum TCE presents sheet resistances as low as 55 Ω/sq and an average conductance as high as 13.12 mS. In addition, the spectral reflectance of this TCE also shows an important reduction in its weighted reflectance value of 2–3%. Hence, the work undergone so far clearly suggests the possibility to noticeably improve transparent electrodes with this approach and therefore to further enhance silicon-heterojunction cell performance. These results achieved so far clearly open the possibility to noticeably improve TCEs and therefore to further enhance SHJ contact-technology performance.

Work function tuning for flexible transparent electrodes based on functionalized metallic single walled carbon nanotubes

Carbon ◽  
2012 ◽  
Vol 50 (10) ◽  
pp. 3459-3464 ◽  
Author(s):  
Evan J. Spadafora ◽  
Karell Saint-Aubin ◽  
Caroline Celle ◽  
Renaud Demadrille ◽  
Benjamin Grévin ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Work Function ◽  
Single Walled Carbon Nanotubes ◽  
Transparent Electrodes ◽  
Single Walled Carbon ◽  
Work Function Tuning ◽  
Walled Carbon Nanotubes ◽  
Flexible Transparent Electrodes

Epitaxial ferroelectric thin films

1994 ◽  
Vol 52 ◽  
pp. 572-573
Author(s):  
S. G. Ghonge ◽  
E. Goo ◽  
R. Ramesh ◽  
R. Haakenaasen ◽  
D. K. Fork
Keyword(s):  
Single Crystal ◽  
Work Function ◽  
Nonvolatile Memory ◽  
Ferroelectric Properties ◽  
Electrical Contact ◽  
Memory Devices ◽  
Ferroelectric Films ◽  
Si Substrates ◽  
Electro Optic ◽  
Wide Range

Microstructure of epitaxial ferroelectric/conductive oxide heterostructures on LaAIO3(LAO) and Si substrates have been studied by conventional and high resolution transmission electron microscopy. The epitaxial films have a wide range of potential applications in areas such as non-volatile memory devices, electro-optic devices and pyroelectric detectors. For applications such as electro-optic devices the films must be single crystal and for applications such as nonvolatile memory devices and pyroelectric devices single crystal films will enhance the performance of the devices. The ferroelectric films studied are Pb(Zr0.2Ti0.8)O3(PLZT), PbTiO3(PT), BiTiO3(BT) and Pb0.9La0.1(Zr0.2Ti0.8)0.975O3(PLZT).Electrical contact to ferroelectric films is commonly made with metals such as Pt. Metals generally have a large difference in work function compared to the work function of the ferroelectric oxides. This results in a Schottky barrier at the interface and the interfacial space charge is believed to responsible for domain pinning and degradation in the ferroelectric properties resulting in phenomenon such as fatigue.

scholarly journals A Productive Expression Platform Derived from Host-Restricted Eilat Virus: Its Extensive Validation and Novel Strategy

Viruses ◽  
2021 ◽  
Vol 13 (4) ◽  
pp. 660
Author(s):  
Lu Tan ◽  
Yiwen Zhang ◽  
Xingxing Wang ◽  
Dal Young Kim
Keyword(s):  
Expression Vectors ◽  
Structural Genes ◽  
Host Restriction ◽  
Expression Platform ◽  
Mosquito Cells ◽  
Wide Range ◽  
Restriction Property ◽  
Infected Cells ◽  
Multiple Levels ◽  
Novel Strategy

Most alphaviruses are transmitted by mosquitoes and infect a wide range of insects and vertebrates. However, Eilat virus (EILV) is defective for infecting vertebrate cells at multiple levels of the viral life cycle. This host-restriction property renders EILV an attractive expression platform since it is not infectious for vertebrates and therefore provides a highly advantageous safety profile. Here, we investigated the feasibility of versatile EILV-based expression vectors. By replacing the structural genes of EILV with those of other alphaviruses, we generated seven different chimeras. These chimeras were readily rescued in the original mosquito cells and were able to reach high titers, suggesting that EILV is capable of packaging the structural proteins of different lineages. We also explored the ability of EILV to express authentic antigens via double subgenomic (SG) RNA vectors. Four foreign genetic materials of varied length were introduced into the EILV genome, and the expressed heterologous genetic materials were readily detected in the infected cells. By inserting an additional SG promoter into the chimera genome containing the structural genes of Chikungunya virus (CHIKV), we developed a bivalent vaccine candidate against CHIKV and Zika virus. These data demonstrate the outstanding compatibility of the EILV genome. The produced recombinants can be applied to vaccine and diagnostic tool development, but more investigations are required.

Oxygen incorporation in TiN for metal gate work function tuning with a replacement gate integration approach

2010 ◽  
Vol 87 (9) ◽  
pp. 1805-1807 ◽  
Author(s):  
Zilan Li ◽  
Tom Schram ◽  
Thomas Witters ◽  
Joshua Tseng ◽  
Stefan De Gendt ◽  
...  
Keyword(s):  
Work Function ◽  
Metal Gate ◽  
Oxygen Incorporation ◽  
Integration Approach ◽  
Work Function Tuning ◽  
Gate Work Function

Bottom-up method for work function tuning in high-k/metal gate stacks in advanced CMOS technologies

2011 ◽  
Author(s):  
Mrunal A. Khaderbad ◽  
Rohit Pandharipande ◽  
Aradhana Gautam ◽  
Abhishek Mishra ◽  
Meenakshi Bhaisare ◽  
...  
Keyword(s):  
Work Function ◽  
Gate Stacks ◽  
Metal Gate ◽  
Bottom Up ◽  
High K ◽  
Work Function Tuning

Fabrication and characterization of flexible hybrid transparent electrodes with broadband transparency

2021 ◽  
pp. 2140023
Author(s):  
Keh-Moh Lin ◽  
Swapnil Shinde ◽  
Ru-Li Lin ◽  
Wen-Tse Hsiao ◽  
Pankaj Koinkar
Keyword(s):  
Sheet Resistance ◽  
Bending Test ◽  
Transparent Electrodes ◽  
Radio Frequency Sputtering ◽  
Light Region ◽  
Average Transmittance ◽  
Continuous State ◽  
Wide Range ◽  
Polyethylene Terephthalate Substrate

In this study, indium-zinc oxide (IZO)/silver (Ag)/IZO (ZAZ) flexible transparent electrodes were prepared on polyethylene terephthalate substrate using radio frequency sputtering technique. Experimental results showed that when the Ag film transited from semi-continuous state to continuous state, the ZAZ electrode exhibited high optoelectronic performance. The best ZAZ sample had a quite wide range of high transmittance and an average transmittance of 78.9% in visible light region, and sheet resistance of [Formula: see text]/sq and a Haacke Index of [Formula: see text]. The bending test revealed that the [Formula: see text] (change in sheet resistance) of ZAZ electrodes after 1000 bends was still less than 25% while the electrical properties of IZO films deteriorated after only 100 bending tests.

scholarly journals Two-dimensional gallium and indium oxides from global structure searching: Ferromagnetism and half metallicity via hole doping

2020 ◽  
Vol 128 (3) ◽  
pp. 034304
Author(s):  
Ruishen Meng ◽  
Michel Houssa ◽  
Konstantina Iordanidou ◽  
Geoffrey Pourtois ◽  
Valeri Afanasiev ◽  
...  
Keyword(s):  
Global Structure ◽  
Hole Doping ◽  
Two Dimensional ◽  
Half Metallicity ◽  
Indium Oxides ◽  
Via Hole
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