scholarly journals Effect of the aromatic precursor flow rate on the morphology and properties of carbon nanostructures in plasma enhanced chemical vapor deposition

RSC Advances ◽  
2016 ◽  
Vol 6 (39) ◽  
pp. 32779-32788 ◽  
Author(s):  
K. Lehmann ◽  
O. Yurchenko ◽  
G. Urban
Keyword(s):  
Chemical Vapor Deposition ◽  
Electrochemical Properties ◽  
Flow Rate ◽  
Vapor Deposition ◽  
Carbon Nanostructures ◽  
Chemical Vapor ◽  
Synthesis Parameters

Understanding the effects of the synthesis parameters on the morphology and electrochemical properties of nanocarbon layers is a key step in the development of application-tailored nanostructures.

An Assessment of Chemical Vapor Deposition Synthesis of SnO2 Nanowires by Statistical Design

2016 ◽  
Vol 701 ◽  
pp. 52-56 ◽  
Author(s):  
Maisara Azad Mat Akhir ◽  
Khairudin Mohamed ◽  
Sheikh Abdul Rezan ◽  
Hooi Ling Lee ◽  
Siti Suhaila M. Izah
Keyword(s):  
Chemical Vapor Deposition ◽  
Flow Rate ◽  
Vapor Deposition ◽  
Deposition Time ◽  
Statistical Design ◽  
Chemical Vapor ◽  
Synthesis Conditions ◽  
Synthesis Parameters ◽  
Cvd Synthesis ◽  
Temperature Deposition

This paper studies the chemical vapor deposition (CVD) synthesis conditions for tin oxide (SnO2) nanowires (NWs) by using statistical design of experiment (DOE). The influences of synthesis parameters (growth temperature, deposition time and flow rate of argon) on SnO2 NWs diameter were studied. From perturbation analysis with DOE, it was found that temperature gave the most significant effect to the diameter of SnO2 NWs via CVD method followed by flowrate of argon and deposition time. Furthermore, based on the cube graph, the smallest SnO2 NWs (~18 nm) can be obtained at temperature of 850 °C with argon flow rate of 100 sccm using a deposition time of 60 min. On the other hand, the largest SnO2 NWs (~248 nm) can be produced at 900 °C.

Numerical Model of Template-Based Chemical Vapor Deposition Processes to Manufacture Carbon Nanotubes for Biological Devices

2015 ◽  
Author(s):  
Yashar Seyed Vahedein ◽  
Michael G. Schrlau
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Process Parameters ◽  
Flow Rate ◽  
Vapor Deposition ◽  
Carbon Nanostructures ◽  
Numerical Models ◽  
Fluid Dynamic ◽  
Low Cost ◽  
Chemical Vapor

Carbon nanotubes (CNTs) hold significant promise in the fields of efficient drug delivery and bio-sensing for disease treatment because of their unique properties. In our lab, single and arrayed CNT-tipped devices are manufactured by deposition of carbon on the heated surfaces of templates using chemical vapor deposition (Template-Based Chemical Vapor Deposition, TB-CVD). Experimental results show CNT formation in templates is controlled by TB-CVD process parameters such as flow rate and temperature. However, there is a need for a more comprehensive and low cost way to characterize the flow in the furnace in order to understand how process parameters may affect CNT formation. In this report, 2D and 3D numerical models with Quadrilateral grids were developed using computational fluid dynamic (CFD) commercial codes. Velocity patterns and flow regimes in the tube were compared with experimental data. In addition, statistical techniques were employed to study temperature profiles and velocity patterns in the furnace as a function of flow rate. The outcome of this work will help to elucidate the TB-CVD process and facilitate the efficient manufacture of carbon nanostructures from a variety of templates. The results are broadly applicable to the manufacturing of CNTs and other nanostructured devices used in energy and biomedical fields, including CNT-based devices used in biological applications.

On the carbo-thermal reduction of silica for carbon nano-fibre formation via CVD

2011 ◽  
Vol 1284 ◽  
Author(s):  
Alicja Bachmatiuk ◽  
Felix Börrnert ◽  
Imad Ibrahim ◽  
Bernd Büchner ◽  
Mark H. Rümmeli
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Carbothermal Reduction ◽  
Carbon Nanostructures ◽  
Reduction Process ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Thermal Reduction ◽  
Fibre Formation ◽  
Quartz Substrates

ABSTRACTThe formation of carbon nanostructures using silica nanoparticles from quartz substrates as a catalyst in an aerosol assisted chemical vapor deposition process was examined. The silica particles are reduced to silicon carbide via a carbothermal reduction process. The recyclability of the explored quartz substrates is also presented. The addition of triethyl borate improves the efficiency of the carbothermal reduction process and carbon nanotubes formation. Moreover, the addition of hydrogen during the chemical vapor deposition leads to the helical carbon nanostructures formation.

Growth of Rhombohedral B12P2 Thin Films on 6H-SiC(0001) By Chemical Vapor Deposition

2003 ◽  
Vol 799 ◽  
Author(s):  
Peng Lu ◽  
J. H. Edgar ◽  
J. Pomeroy ◽  
M. Kuball ◽  
H. M. Meyer ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Flow Rate ◽  
Growth Rates ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Flow Rate Ratio ◽  
Good Surface ◽  
Boron Phosphide ◽  
Moderate Growth

ABSTRACTThe parameters necessary to deposit oriented rhombohedral boron phosphide (B12P2) thin films on on-axis Si-face 6H-SiC(0001) substrates by chemical vapor deposition are reported. Ultra high purity BBr3 and PBr3 were used as reactants, with hydrogen as the carrier gas. The BBr3 to PBr3 flow rate ratio was adjusted to obtain good surface morphology of the B12P2 films. BBr3 to PBr3 ratios in the range of 1 to 1.5 produced smooth surfaces and moderate growth rates of 10μm/hr. Higher growth rates were obtained by increasing the BBr3 flow rate, but the surfaces became very rough. The c-axis of the B12P2 film was aligned with the c -axis of the substrate at temperatures between 1650°C-1700°C. The surface morphologies were investigated by SEM and the crystalline properties of the films were characterized by XRD and Raman spectroscopy.

Fabrication and characterization of ferroelectric Pb(ZrxTi1–x)O3 thin films by metalorganic chemical vapor deposition

1999 ◽  
Vol 14 (2) ◽  
pp. 487-493 ◽  
Author(s):  
Han Sang Song ◽  
Tae Song Kim ◽  
Chang Eun Kim ◽  
Hyung Jin Jung
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Flow Rate ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Pyrochlore Phase ◽  
Chemical Vapor ◽  
Spectra Analysis ◽  
Pzt Thin Films ◽  
Metalorganic Chemical

Ferroelectric Pb(Zr, Ti)O3 (PZT) thin films were grown on Pt/Ti/SiO2/Si, RuO2/Pt/Ti/SiO2/Si, and Pt/MgO substrates at the substrate temperature of 600 °C by the metalorganic chemical vapor deposition (MOCVD) method. Pb(C11H19O2)2(Pb(DPM)2), Ti(OiC3H7)4, and Zr(OtC4H9)4 as source material and Ar and O2 as a carrier gas and oxidizing agent were selected, respectively. In order to investigate the effect of Zr and Ti component changes on the growth aspect of PZT thin films, Zr and Ti source materials were varied by controlling Zr and Ti flow rate. From the Rutherford backscattering spectroscopy (RBS) measurement, it was confirmed that the composition of the films, particularly Pb content, changed with the increasing Zr flow rate. In addition, the x-ray diffraction (XRD) spectra analysis showed the existence of a Pb-deficient pyrochlore phase as well as ZrO2 as a secondary phase. From these results, it is believed that the higher Zr partial pressure in the gas phase reduces the sticking of the Pb precursor to the substrate. The film with Pb:Zr:Ti = 1:0.42:0.58 showed a dielectric constant of 816 at 1 MHz. The spontaneous polarization, remanent polarization, and coercive field measured from the RT66A by applying 3.5 V were 44.1 μC/cm2, 24.4 μC/cm2, and 59.6 kV/cm, respectively. The fatigue analysis of PZT thin films with Pb:Zr:Ti = 1:0.42:0.58 at an applied voltage of Vp-p = 5.4 V showed 40% degradation on the basis of initial polarization value after 109 cycles.

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