scholarly journals Grain boundary-mediated nanopores in molybdenum disulfide grown by chemical vapor deposition

Nanoscale ◽  
2017 ◽  
Vol 9 (4) ◽  
pp. 1591-1598 ◽  
Author(s):  
Kenan Elibol ◽  
Toma Susi ◽  
Maria O′Brien ◽  
Bernhard C. Bayer ◽  
Timothy J. Pennycook ◽  
...  
Materials ◽  
2018 ◽  
Vol 11 (4) ◽  
pp. 631 ◽  
Author(s):  
Song Zhang ◽  
Jiajia Liu ◽  
Karla Ruiz ◽  
Rong Tu ◽  
Meijun Yang ◽  
...  

2020 ◽  
Vol 124 (4) ◽  
pp. 2689-2697 ◽  
Author(s):  
Erik Pollmann ◽  
Juliana M. Morbec ◽  
Lukas Madauß ◽  
Lara Bröckers ◽  
Peter Kratzer ◽  
...  

2020 ◽  
Vol 204 ◽  
pp. 01003
Author(s):  
Huaizhang Wang ◽  
Yangyang Wang ◽  
Pengbo Chi ◽  
Huaning Jiang ◽  
Jingfei Chen ◽  
...  

As a graphene-like material, molybdenum disulfide has similar properties to graphene, but due to its excellent properties such as adjustable band gap, molybdenum disulfide has a broader application in many aspects (such as gas sensors). With the deepening of research, molybdenum disulfide cannot fully meet the needs of researchers due to defects and other reasons. Therefore, researches on doping and compounding of molybdenum disulfide have gradually attracted attention. At present, most of the research on gas sensitivity has focused on harmful gases (such as nitrogen dioxide, ammonia and carbon monoxide, etc.). There are few studies on the erosive chemical toxic mustard gas. In this paper, vanadium-doped molybdenum disulfide were prepared based on chemical vapor deposition, and the gas-sensitive response of vanadium-doped molybdenum disulfide to mustard gas was studied.


ACS Omega ◽  
2020 ◽  
Vol 5 (34) ◽  
pp. 21853-21861
Author(s):  
Chad A. Beaudette ◽  
Jacob T. Held ◽  
K. Andre Mkhoyan ◽  
Uwe R. Kortshagen

2017 ◽  
Vol 28 (46) ◽  
pp. 465103 ◽  
Author(s):  
Jeong-Gyu Song ◽  
Gyeong Hee Ryu ◽  
Youngjun Kim ◽  
Whang Je Woo ◽  
Kyung Yong Ko ◽  
...  

NANO ◽  
2018 ◽  
Vol 13 (08) ◽  
pp. 1850088 ◽  
Author(s):  
Yang Wang ◽  
Yu Cheng ◽  
Yunlu Wang ◽  
Shuai Zhang ◽  
Chen Xu ◽  
...  

Many aspects in the chemical vapor deposition (CVD) growth of graphene remain unclear such as its behavior near the catalyst grain boundaries. Here we investigate the CVD growth mechanism of graphene across the Cu grain boundaries using unidirectional aligned graphene domains, which simplifies the analysis of both graphene and Cu to a large extent. We found that for a graphene domain grown across the Cu grain boundary, the domain orientation is determined by the Cu grain where the domain nucleation center is located, and the Cu grain boundary will not change the growth behavior for this graphene domain. This growth mechanism is consistent with the Cu-step-attached nucleation and edge-attachment-limited growth mechanism for H-terminated graphene domains and will provide more guidance for the synthesis of high-quality graphene with less domain boundaries.


2020 ◽  
Vol 13 (7) ◽  
pp. 071006
Author(s):  
Ai-Guo Yang ◽  
Jiajun Chen ◽  
Peng Yang ◽  
Laigui Hu ◽  
Ran Liu ◽  
...  

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