scholarly journals Searching for promising new perovskite-based photovoltaic absorbers: the importance of electronic dimensionality

2017 ◽  
Vol 4 (2) ◽  
pp. 206-216 ◽  
Author(s):  
Zewen Xiao ◽  
Weiwei Meng ◽  
Jianbo Wang ◽  
David B. Mitzi ◽  
Yanfa Yan
Keyword(s):  
Solar Cells ◽  
Valence Band ◽  
Conduction Band ◽  
Device Performance ◽  
Atomic Orbitals ◽  
Lower Conduction Band

The concept of electronic dimensionality,i.e., the connectivity of the atomic orbitals that comprise the lower conduction band and upper valence band, is introduced to better account for the device performance of the perovskite-based solar cells.

Relationship between the intermediate phases of the sputtered Zn(O,S) buffer layer and the conduction band offset in Cd-free Cu(In,Ga)Se2 solar cells

CrystEngComm ◽  
2020 ◽  
Vol 22 (26) ◽  
pp. 4416-4426
Author(s):  
Qian Du ◽  
Boyan Li ◽  
Sihan Shi ◽  
Kaizhi Zhang ◽  
Yunxiang Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Buffer Layer ◽  
Conduction Band ◽  
Band Offset ◽  
Device Performance ◽  
Conduction Band Offset ◽  
Intermediate Phases

Intermediate phases are formed in Zn(O,S) thin films with different oxygen fluxes, affecting the device performance.

Corrole-sensitized TiO2 solar cells

2006 ◽  
Vol 10 (11) ◽  
pp. 1259-1262 ◽  
Author(s):  
Don Walker ◽  
Shlomit Chappel ◽  
Atif Mahammed ◽  
Bruce S. Brunschwig ◽  
Jay R. Winkler ◽  
...  
Keyword(s):  
Solar Cells ◽  
Excited States ◽  
Conduction Band ◽  
Reducing Power ◽  
Free Base ◽  
Lower Conduction Band

We are investigating the properties of corrole-sensitized TiO 2 solar cells. The TiO 2-adsorbed free base and Ga III corroles display cell efficiencies under AM 1.5 illumination that are about half that of a standard N 3-sensitized cell ( N 3 = cis-bis(4,4'-dicarboxy-2,2'-bipyridine)dithiocyanato ruthenium(II)), while that of the Sn IV-based cell is much lower. The properties of the corrole- TiO 2 solar cells, along with results obtained with electrodes of lower conduction band energies clearly reveal that the reducing power of the singlet excited states of the free base and Ga III corrole, but not of the Sn IV derivative, is sufficiently high for efficient injection into the TiO 2 conduction band.

scholarly journals Band Tunable CdSe Quantum Dot-Doped Metals for Quantum Dot-Sensitized Solar Cell Application

2019 ◽  
Vol 2019 ◽  
pp. 1-8 ◽  
Author(s):  
Dang Huu Phuc ◽  
Ha Thanh Tung
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Valence Band ◽  
Conduction Band ◽  
High Efficiency ◽  
Energy Gap ◽  
Electrochemical Impedance ◽  
Morphological Observation ◽  
Energy Structure ◽  
Solar Cell Application

Quantum dots are drawing great attention as a material for the next-generation solar cells because of the high absorption coefficient, tunable band gap, and multiple exciton generation effect. In search of the viable way to enhance the power conversion efficiency of quantum dot-sensitized solar cells, we have succeeded in preparing the quantum dot solar cells with high efficiency based on CdSe:X (Mn2+ or Cu2+) nanocrystal by successive ionic layer absorption and reaction. The morphological observation and crystalline structure of photoanode were characterized by field-emission scanning electron microscopy, X-ray diffraction, and the EDX spectra. In addition, the electrochemical performance of photoelectrode was studied by the electrochemical impedance spectra. As a result, we have succeeded in designing QDSSCs with a high efficiency of 4.3%. Moreover, the optical properties, the direct optical energy gap, and both the conduction band and the valence band levels of the compositional CdSe:X were estimated by the theory of Tauc and discussed details. This theory is useful for us to understand the alignment energy structure of the compositions in electrodes, in particular, the conduction band and valence band levels of CdSe:X nanoparticles.

Effects of Band Offsets on a-Sic:H/c-Si Heterojunction Solar Cell Performance

1998 ◽  
Vol 507 ◽  
Author(s):  
M. W. M. Van Cleef ◽  
F. A. Rubinelli ◽  
R. E. I. Schropp
Keyword(s):  
Solar Cells ◽  
Valence Band ◽  
Conduction Band ◽  
Fill Factor ◽  
Open Circuit ◽  
Tunnel Barrier ◽  
Solar Cell Performance ◽  
Band Offsets ◽  
Heterojunction Solar Cells ◽  
Simulation Results

ABSTRACTWe used the internal photoemission technique to determine the exact valence and conduction band offsets at the a-SiC:H/c-Si interface and investigated with numerical simulations their effects on the photocarrier collection in p+a-SiC:H/n c-Si heterojunction solar cells. The valence and conduction band offsets were found to be 0.60 eV and 0.55 eV, respectively. Simulation results show that a high valence band offset increases the open circuit voltage (higher built-in potential) but on the other hand can decrease the fill factor (by blocking the collection of photogenerated holes at the front contact). Interestingly, despite having a large barrier inside the valence band (ΔEv = 0.6 eV), our highly doped p+a-SiC:H/n c-Si heterojunction solar cells show no collection problems (FF= 0.73). Both IPE measurements and simulation results indicate that tunneling of holes through this barrier in the valence band can explain this effect. For thin highly doped (Eact = 0.33 eV) p+a-SiC:H layers, the tunnel barrier becomes very narrow (< 70 Å) and the tunneling probability is strongly enhanced.

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