Design and synthesis of model and practical palladium catalysts using atomic layer deposition

2016 ◽  
Vol 6 (18) ◽  
pp. 6845-6852 ◽  
Author(s):  
Zheng Lu ◽  
Orhan Kizilkaya ◽  
A. Jeremy Kropf ◽  
Mar Piernavieja-Hermida ◽  
Jeffrey T. Miller ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Palladium Catalysts ◽  
Atomic Layer ◽  
Design And Synthesis ◽  
Layer Deposition ◽  
The One

We investigated the “one-batch” synthesis of model and practical palladium catalysts using atomic layer deposition (ALD).

Coking- and Sintering-Resistant Palladium Catalysts Achieved Through Atomic Layer Deposition

Science ◽  
2012 ◽  
Vol 335 (6073) ◽  
pp. 1205-1208 ◽  
Author(s):  
Junling Lu ◽  
Baosong Fu ◽  
Mayfair C. Kung ◽  
Guomin Xiao ◽  
Jeffrey W. Elam ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Palladium Catalysts ◽  
Atomic Layer ◽  
Layer Deposition

Palladium Catalysts Synthesized by Atomic Layer Deposition for Methanol Decomposition

2010 ◽  
Vol 22 (10) ◽  
pp. 3133-3142 ◽  
Author(s):  
Hao Feng ◽  
Jeffrey W. Elam ◽  
Joseph A. Libera ◽  
Worajit Setthapun ◽  
Peter C. Stair
Keyword(s):  
Atomic Layer Deposition ◽  
Palladium Catalysts ◽  
Atomic Layer ◽  
Methanol Decomposition ◽  
Layer Deposition

Application of Atomic Layer Deposition in Dye-Sensitized Photoelectrosynthesis Cells

2021 ◽  
Vol 3 (1) ◽  
pp. 59-71
Author(s):  
Degao Wang ◽  
Qing Huang ◽  
Weiqun Shi ◽  
Wei You ◽  
Thomas J. Meyer
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Dye Sensitized ◽  
Layer Deposition

Workfunction of Al-Doped ZnO Films Deposited by Atomic Layer Deposition

2018 ◽  
Author(s):  
Peter George Gordon ◽  
Goran Bacic ◽  
Gregory P. Lopinski ◽  
Sean Thomas Barry
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Atomic Ratio ◽  
Aluminum Concentration ◽  
Zno Films ◽  
Transparent Conductor ◽  
Kelvin Probe ◽  
Layer Deposition ◽  
Earth Abundant ◽  
Doped Zno

Al-doped ZnO (AZO) is a promising earth-abundant alternative to Sn-doped In<sub>2</sub>O<sub>3</sub> (ITO) as an n-type transparent conductor for electronic and photovoltaic devices; AZO is also more straightforward to deposit by atomic layer deposition (ALD). The workfunction of this material is particularly important for the design of optoelectronic devices. We have deposited AZO films with resistivities as low as 1.1 x 10<sup>-3</sup> Ωcm by ALD using the industry-standard precursors trimethylaluminum (TMA), diethylzinc (DEZ), and water at 200<sup>◦</sup>C. These films were transparent and their elemental compositions showed reasonable agreement with the pulse program ratios. The workfunction of these films was measured using a scanning Kelvin Probe (sKP) to investigate the role of aluminum concentration. In addition, the workfunction of AZO films prepared by two different ALD recipes were compared: a “surface” recipe wherein the TMA was pulsed at the top of each repeating AZO stack, and a interlamellar recipe where the TMA pulse was introduced halfway through the stack. As aluminum doping increases, the surface recipe produces films with a consistently higher workfunction as compared to the interlamellar recipe. The resistivity of the surface recipe films show a minimum at a 1:16 Al:Zn atomic ratio and using an interlamellar recipe, minimum resistivity was seen at 1:19. The film thicknesses were characterized by ellipsometry, chemical composition by EDX, and resistivity by four-point probe.<br>

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