scholarly journals Detection of electron tunneling across plasmonic nanoparticle–film junctions using nitrile vibrations

2017 ◽  
Vol 19 (8) ◽  
pp. 5786-5796 ◽  
Author(s):  
Hao Wang ◽  
Kun Yao ◽  
John A. Parkhill ◽  
Zachary D. Schultz

Vibrational Stark shifts from nitriles provide a quantitative indicator of electric fields arising from plasmon-induced quantum tunneling effects.

Author(s):  
P. Singh ◽  
V. Cozzolino ◽  
G. Galyon ◽  
R. Logan ◽  
K. Troccia ◽  
...  

Abstract The time delayed failure of a mesa diode is explained on the basis of dendritic growth on the oxide passivated diode side walls. Lead dendrites nucleated at the p+ side Pb-Sn solder metallization and grew towards the n side metallization. The infinitesimal cross section area of the dendrites was not sufficient to allow them to directly affect the electrical behavior of the high voltage power diodes. However, the electric fields associated with the dendrites caused sharp band bending near the silicon-oxide interface leading to electron tunneling across the band gap at velocities high enough to cause impact ionization and ultimately the avalanche breakdown of the diode. Damage was confined to a narrow path on the diode side wall because of the limited influence of the electric field associated with the dendrite. The paper presents experimental details that led to the discovery of the dendrites. The observed failures are explained in the context of classical semiconductor physics and electrochemistry.


2020 ◽  
Vol 12 (14) ◽  
pp. 16753-16761 ◽  
Author(s):  
Wenkai Liang ◽  
Yinghui Sun ◽  
Zhiqiang Liang ◽  
Dong Li ◽  
Yawen Wang ◽  
...  

Nanoscale ◽  
2019 ◽  
Vol 11 (47) ◽  
pp. 23058-23064 ◽  
Author(s):  
Junchang Zhang ◽  
Yinghui Sun ◽  
Rui Feng ◽  
Wenkai Liang ◽  
Zhiqiang Liang ◽  
...  

Vis-NIR light absorption and effective separation of electron–hole pairs are achieved by integrating the SPR modes of plasmonic nanoparticle and film, which lead to an 88-fold increase in photocurrent under λ > 420 nm compared to TiO2.


2010 ◽  
Vol 108 (11) ◽  
pp. 113107
Author(s):  
L. B. Cen ◽  
B. Shen ◽  
C. C. Huang ◽  
F. J. Xu ◽  
Z. X. Qin ◽  
...  

2018 ◽  
Vol 6 (22) ◽  
pp. 5857-5864 ◽  
Author(s):  
Niranjan V. Ilawe ◽  
M. Belén Oviedo ◽  
Bryan M. Wong

Quantum-mechanical effects can result in qualitatively different (and sometimes completely opposite) results for excitation energy transfer in plasmonic waveguides.


1990 ◽  
Vol 42 (9) ◽  
pp. 5719-5734 ◽  
Author(s):  
Toshio Matsusue ◽  
Masahiro Tsuchiya ◽  
J. N. Schulman ◽  
Hiroyuki Sakaki

2022 ◽  
Vol 2022 ◽  
pp. 1-6
Author(s):  
Lamessa Gudata ◽  
Jule Leta Tesfaye ◽  
Abela Saka ◽  
R. Shanmugam ◽  
L. Priyanka Dwarampudi ◽  
...  

The exploration of Coulomb blockade oscillations in plasmonic nanoparticle dimers is the subject of this study. When two metal nanoparticles are brought together at the end of their journey, tunnelling current prevents an infinite connection dipolar plasmon and an infinite amplification in the electric fields throughout the hot spot in between nanoparticles from occurring. One way to think about single-electron tunnelling through some kind of quantum dot is to think about Coulomb blockage oscillations in conductance. The electron transport between the dot and source is considered. The model of study is the linear conductance skilled at describing the basic physics of electronic states in the quantum dot. The linear conductance through the dot is defined as G = lim ⟶ 0 I / V in the limit of infinity of small bias voltage. We discuss the classical and quantum metallic Coulomb blockade oscillations. Numerically, the linear conductance was plotted as a function gate voltage. The Coulomb blockade oscillation occurs as gate voltage varies. In the valleys, the conductance falls exponentially as a function gate voltage. As a result of our study, the conductance is constant at high temperature and does not show oscillation in both positive and negative gate voltages. At low temperature, conductance shows oscillation in both positive and negative gate voltages.


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