Conductance and activation energy for electron transport in series and parallel intramolecular circuits

2016 ◽  
Vol 18 (47) ◽  
pp. 32087-32095 ◽  
Author(s):  
Liang-Yan Hsu ◽  
Ning Wu ◽  
Herschel Rabitz
Keyword(s):  
Activation Energy ◽  
Electron Transport ◽  
Redfield Theory ◽  
In Series ◽  
Multi Level

We investigate electron transport through series and parallel intramolecular circuits in the framework of the multi-level Redfield theory.

Activation Energy of Electron Transport in Dye-Sensitized TiO2Solar Cells

2005 ◽  
Vol 109 (24) ◽  
pp. 12093-12098 ◽  
Author(s):  
Gerrit Boschloo ◽  
Anders Hagfeldt
Keyword(s):  
Activation Energy ◽  
Electron Transport ◽  
Dye Sensitized

The Tolerance Optimization Problem Using a Near-to-Global Optimum

2000 ◽  
Author(s):  
Mohamed H. Gadallah
Keyword(s):  
Optimization Problem ◽  
Global Optimum ◽  
Optimum Process ◽  
Test Cases ◽  
Discrete Optimization Problem ◽  
Tolerance Optimization ◽  
In Series ◽  
Multi Level ◽  
Process Combination ◽  
Search Domain

Abstract In this paper, an algorithm is developed to deal with the discrete optimization problem. The algorithm approximates any design continuous domain with finite number of discrete points and employs single and multi-level search to reach near-to-global optimum. In single level search, one orthogonal array is used to model any given search domain. In multi-level search, two or more orthogonal arrays are coupled in series and used to model the search domain. The number of design levels are increased with the number of arrays via different coefficients. The tolerance synthesis problem with optimum process combination is revisited to compare our method with well-established algorithms such as Simulated Annealing (SA) and Sequential Quadratic Programming (SQP). The effect of algorithm parameters: different structure combinations, reducing move factors, weighing factors and column assignments on optimum for single and multi-level search are investigated. Results indicate the capability of the approach to reach near-to-global optimum in about 5.20%–19.5% of time taken by other methods. A survey of available algorithms is given and the method is validated with few test cases.

Macro Kinetics of N-Phosphonomethyliminodiacetic Acid Catalytic Oxidation

2012 ◽  
Vol 455-456 ◽  
pp. 872-879 ◽  
Author(s):  
Yan Bao ◽  
Jia Wu ◽  
Xiao Ping Hu
Keyword(s):  
Activation Energy ◽  
Kinetic Model ◽  
Measured Data ◽  
Second Step ◽  
Oxidizing Agent ◽  
Dissolved Oxygen Concentration ◽  
Exponential Factor ◽  
In Series ◽  
Kinetics Of ◽  
Made In

The oxidation of N-phosphonomethyliminodiacetic acid (PMIDA) to prepare glyphosate (PMG) over active carbon was investigated. Experiments were carried out with O2 as the oxidizing agent in a 150-mL autoclave made in stainless steel, with reaction temperature ranging from 323.15 to 353.25K and the pressure from 0.12 to 0.40 MPa. The macro kinetic model of the reactions in series was developed, and the pre-exponential factor and activation energy were estimated from the measured data in experiments. The influence of dissolved oxygen concentration was also considered in this macro kinetic model. The results indicated that the two step reactions are all one-order to reactant (PMIDA or PMG) and 0.3 or 0.07 to O2 respectively. The active energy was 12.98kJ/mol for the first step reaction and 10.87kJ/mol for the second step reaction.

Multiple multi-level redundancy allocation in series systems

2007 ◽  
Vol 92 (3) ◽  
pp. 308-313 ◽  
Author(s):  
Won Young Yun ◽  
Young Man Song ◽  
Ho-Gyun Kim
Keyword(s):  
Redundancy Allocation ◽  
In Series ◽  
Multi Level ◽  
Series Systems

An X-Ray Photoelectron Study of Doped and Supported Nickel Oxide

1985 ◽  
Vol 38 (9) ◽  
pp. 1293 ◽  
Author(s):  
SJ Cochran ◽  
FP Larkins
Keyword(s):  
Activation Energy ◽  
Electron Transport ◽  
Nickel Oxide ◽  
Photoelectron Spectroscopy ◽  
Oxide Surface ◽  
X Ray ◽  
Peak Intensity ◽  
Photoelectron Study ◽  
Supported Oxides ◽  
Doped Oxide

The surfaces of lithium-and chromium-doped nickel oxide and of nickel oxide supported on alumina have been examined by X-ray photoelectron spectroscopy. The concentration of the nickel(III) species increased for the lithium-doped oxide and decreased for the chromium-doped oxide relative to the undoped oxide. The effects of doping were manifested most clearly however by the amount of oxygen-containing species adsorbed on the oxide surface rather than by variations in the nickel(III) peak intensity. Lithium-doped oxides were also shown to reduce more readily than undoped or chromium-doped oxides in the presence of carbon-containing impurities. The rate of reduction is influenced by the activation energy for electron transport which is related to the availability of the nickel(III) species. Supported oxides showed significant surface enhancement of nickel(II) as well as an absence of the nickel(III) species. The nickel(II) species in the supported oxide was not easily reduced to nickel(0).

On Compensation and Impurities in State-of-the-Art GaN Epilayers Grown on Sapphire

1995 ◽  
Vol 395 ◽  
Author(s):  
A.E. Wickenden ◽  
D.K. Gaskill ◽  
D.D. Koleske ◽  
K. Doverspike ◽  
D.S. Simons ◽  
...  
Keyword(s):  
Activation Energy ◽  
Electron Transport ◽  
State Of The Art ◽  
Theoretical Calculations ◽  
Recent Analysis ◽  
Silicon Doping ◽  
Sapphire Substrates ◽  
Silicon Doped ◽  
Gan Film

ABSTRACTA comparison between 300 K electron transport data for state-of-the-art wurtzite GaN grown on sapphire substrates and corresponding theoretical calculations shows a large difference, with experimental mobility less than the predicted mobility for a given carrier concentration. The comparison seems to imply that GaN films are greatly compensated, but the discrepancy may also be due to the poorly known values of the materials parameters used in the calculations. In this work, recent analysis of transport and SIMS measurements on silicon-doped GaN films are shown to imply that the compensation, NA/ND, is less than 0.3. In addition, the determination of an activation energy of 34 meV in a GaN film doped to a level of 6×1016 cm−3 suggests either that a second, native donor exists in the doped films at a level of between 6×1017 cm−3 and 1×1017 cm−3, or that the activation energy of Si in GaN is dependent on the concentration, being influenced by impurity banding or some other physical effect. GaN films grown without silicon doping are highly resistive.

Effect of Word-Line Bias on Linearity of Multi-Level Conductance Steps for Multi-Layer Neural Networks Based on NAND Flash Cells

2020 ◽  
Vol 20 (7) ◽  
pp. 4138-4142
Author(s):  
Sung-Tae Lee ◽  
Suhwan Lim ◽  
Nagyong Choi ◽  
Jong-Ho Bae ◽  
Dongseok Kwon ◽  
...  
Keyword(s):  
Neural Networks ◽  
Flash Memory ◽  
Storage Capacity ◽  
High Density ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Data Set ◽  
Source Line ◽  
In Series ◽  
Multi Level

NAND flash memory which is mature technology has great advantage in high density and great storage capacity per chip because cells are connected in series between a bit-line and a source-line. Therefore, NAND flash cell can be used as a synaptic device which is very useful for a high-density synaptic array. In this paper, the effect of the word-line bias on the linearity of multi-level conductance steps of the NAND flash cell is investigated. A 3-layer perceptron network (784×200×10) is trained by a suitable weight update method for NAND flash memory using MNIST data set. The linearity of multi-level conductance steps is improved as the word line bias increases from Vth −0.5 to Vth +1 at a fixed bit-line bias of 0.2 V. As a result, the learning accuracy is improved as the word-line bias increases from Vth −0.5 to Vth+1.

Current Analysis of Power Devices of the Sub-Module in New Modular Multi-Level Converter

2012 ◽  
Vol 201-202 ◽  
pp. 410-413
Author(s):  
Yan Xie ◽  
Bo Chao Chen ◽  
Yao Jun Chen
Keyword(s):  
Current Distribution ◽  
Theoretical Basis ◽  
Power Level ◽  
Current Analysis ◽  
Power Devices ◽  
Working Mechanism ◽  
In Series ◽  
Multi Level ◽  
Simulation Results ◽  
Level Converter

This paper introduced a new modular multi-level converter (MMC), which could enhance the voltage and power level by sub-converter modules in series and was easy to extend to any level of output. Its structure and working mechanism were described.By analyzing the new modular multi-level converter (MMC) working mode, its sub-module four power devices’ current distribution is detailed analysis. It can further guide the choice of the device. The simulation results show that the analysis is correct and effective. It can provide a valid theoretical basis for the choice of the MMC sub-module power devices.

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