scholarly journals Interface phonon modes in the [AlN/GaN]20 and [Al0.35Ga0.65N/Al0.55Ga0.45N]20 2D multi-quantum well structures

2016 ◽  
Vol 18 (43) ◽  
pp. 29864-29870 ◽  
Author(s):  
A. K. Sivadasan ◽  
Chirantan Singha ◽  
A. Bhattacharyya ◽  
Sandip Dhara
Keyword(s):  
Dielectric Constant ◽  
Quantum Well ◽  
Phonon Modes ◽  
Quantum Well Structures ◽  
Barrier Layers ◽  
Multi Quantum Well

Interface phonon (IF) modes of [AlN/GaN]20 and [Al0.35Ga0.65N/Al0.55Ga0.45N]20 multi-quantum well (MQW) structures are reported. The effect of variation in the dielectric constant of “barrier” layers periodically arranged in the MQWs is investigated.

InGaN∕GaN multi-quantum-well structures on (111)-oriented bonded silicon-on-insulator substrates

2005 ◽  
Vol 87 (11) ◽  
pp. 111908 ◽  
Author(s):  
L. S. Wang ◽  
S. Tripathy ◽  
S. J. Chua ◽  
K. Y. Zang
Keyword(s):  
Quantum Well ◽  
Silicon On Insulator ◽  
Quantum Well Structures ◽  
Multi Quantum Well

scholarly journals lntersubband Relaxation in Step Quantum Well Structures

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 289-293
Author(s):  
J. P. Sun ◽  
H. B. Teng ◽  
G. I. Haddad ◽  
M. A. Stroscio ◽  
G. J. Iafrate
Keyword(s):  
Quantum Well ◽  
Form Factors ◽  
Phonon Energy ◽  
Longitudinal Optical Phonon ◽  
Relaxation Rates ◽  
Phonon Modes ◽  
Quantum Well Structures ◽  
Bulk Phonon ◽  
Interface Phonons ◽  
Intersubband Relaxation

Intersubband relaxation due to electron interactions with the localized phonon modes plays an important role for population inversion in quantum well laser structures designed for intersubband lasers operating at mid-infrared to submillimeter wavelengths. In this work, intersubband relaxation rates between subbands in step quantum well structures are evaluated numerically using Fermi's golden rule, in which the localized phonon modes including the asymmetric interface modes, symmetric interface modes, and confined phonon modes and the electron – phonon interaction Hamiltonians are derived based on the macroscopic dielectric continuum model, whereas the electron wave functions are obtained by solving the Schrödinger equation for the heterostructures under investigation. The sum rule for the relationship between the form factors of the various localized phonon modes and the bulk phonon modes is examined and verified for these structures. The intersubband relaxation rates due to electron scattering by the asymmetric interface phonons, symmetric interface phonons, and confined phonons are calculated and compared with the relaxation rates calculated using the bulk phonon modes and the Fröhlich interaction Hamiltonian for step quantum well structures with subband separations of 36 meV and 50meV, corresponding to the bulk longitudinal optical phonon energy and interface phonon energy, respectively. Our results show that for preferential electron relaxation in intersubband laser structures, the effects of the localized phonon modes, especially the interface phonon modes, must be included for optimal design of these structures.

Dispersion of photoluminescence peak positions in asymmetric InAs QD multi quantum well structures

2011 ◽  
Vol 8 (4) ◽  
pp. 1388-1390 ◽  
Author(s):  
J. L. Casas Espínola ◽  
T. V. Torchynska ◽  
G. Polupan ◽  
M. Ojeda Martínez
Keyword(s):  
Quantum Well ◽  
Quantum Well Structures ◽  
Multi Quantum Well ◽  
Photoluminescence Peak

1550-nm InGaAsP multi-quantum-well structures selectively grown on v-groove-patterned SOI substrates

2017 ◽  
Vol 111 (3) ◽  
pp. 032105 ◽  
Author(s):  
Ludovico Megalini ◽  
Bastien Bonef ◽  
Brian C. Cabinian ◽  
Hongwei Zhao ◽  
Aidan Taylor ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Well Structures ◽  
Soi Substrates ◽  
Multi Quantum Well

Self-Consistent Optimization of Multi-Quantum Well Structures by a Genetic Algorithm

2010 ◽  
Vol 46 (8) ◽  
pp. 2759-2762 ◽  
Author(s):  
Angelo Passaro ◽  
Roberto Yuji Tanaka ◽  
Ademar Muraro ◽  
Gustavo Soares Vieira ◽  
Nancy Mieko Abe
Keyword(s):  
Genetic Algorithm ◽  
Quantum Well ◽  
Quantum Well Structures ◽  
Self Consistent ◽  
Multi Quantum Well

Effects of pulsed Al injection on InGaN/GaN multi quantum well structures grown by MOCVD

2021 ◽  
Author(s):  
Avinash Paliwal ◽  
Priyavart Parjapat ◽  
Bhoopendra Kumar Kushwaha ◽  
Kuldip Singh ◽  
Manish Mathew
Keyword(s):  
Quantum Well ◽  
Quantum Well Structures ◽  
Multi Quantum Well
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