scholarly journals Thermal contact resistance across a linear heterojunction within a hybrid graphene/hexagonal boron nitride sheet

2016 ◽  
Vol 18 (35) ◽  
pp. 24164-24170 ◽  
Author(s):  
Yang Hong ◽  
Jingchao Zhang ◽  
Xiao Cheng Zeng
Keyword(s):  
Heat Transfer ◽  
Thermal Properties ◽  
Boron Nitride ◽  
Contact Resistance ◽  
Thermal Contact Resistance ◽  
Hexagonal Boron Nitride ◽  
Thermal Contact ◽  
Thermal Conductance ◽  
Vital Role ◽  
Interfacial Thermal Conductance

Interfacial thermal conductance plays a vital role in defining the thermal properties of nanostructured materials in which heat transfer is predominantly phonon mediated.

scholarly journals Energetic and thermal properties of tilt grain boundaries in graphene/hexagonal boron nitride heterostructures

2015 ◽  
Vol 08 (03) ◽  
pp. 1550038 ◽  
Author(s):  
Mingchao Wang ◽  
Guangping Zhang ◽  
Huisheng Peng ◽  
Cheng Yan
Keyword(s):  
Thermal Properties ◽  
Boron Nitride ◽  
Grain Boundaries ◽  
Hexagonal Boron Nitride ◽  
Electronic Devices ◽  
Thermal Conductance ◽  
Interfacial Thermal Conductance ◽  
Non Equilibrium Molecular Dynamics ◽  
Dynamics Simulations ◽  
Misorientation Angles

Graphene/hexagonal boron nitride (G/h-BN) heterostructure has attracted tremendous research efforts owing to its great potential for applications in nanoscale electronic devices. In such hybrid materials, tilt grain boundaries (GBs) between graphene and h-BN grains may have unique physical properties, which have not been well understood. Here we have conducted non-equilibrium molecular dynamics simulations to study the energetic and thermal properties of tilt GBs in G/h-BN heterostructures. The effect of misorientation angles of tilt GBs on both GB energy and interfacial thermal conductance are investigated.

scholarly journals Study of an inclined interface of contact using lattice Boltzmann method

2019 ◽  
Vol 23 (3 Part B) ◽  
pp. 1837-1846
Author(s):  
Mhamdi El ◽  
Elalami Semma
Keyword(s):  
Heat Transfer ◽  
Contact Resistance ◽  
Lattice Boltzmann Method ◽  
Lattice Boltzmann ◽  
Thermal Contact Resistance ◽  
Transfer Problem ◽  
Thermal Contact ◽  
Image Model ◽  
Steady Regime ◽  
Boltzmann Method

The lattice Boltzmann method and the particle image model are adopted to study a heat transfer problem with thermal contact resistance. In this paper, a new study involving an inclined interface of contact between two media is introduced in order to evaluate a 2-D heat transfer in the steady regime. A case of study and numerical results are provided to support this configuration. The obtained results show the effect of the thermal contact resistance on the heat transfer, as well as the temperature distribution on the two contacting media.

The problem of thermal contact resistance during heat transfer to liquid metals

Atomic Energy ◽  
1962 ◽  
Vol 11 (3) ◽  
pp. 910-913
Author(s):  
O. P. Astakhov ◽  
V. I. Petrov ◽  
O. S. Fedynskii
Keyword(s):  
Heat Transfer ◽  
Contact Resistance ◽  
Thermal Contact Resistance ◽  
Liquid Metals ◽  
Thermal Contact

Thermal Contact Resistance of a Silicon Nanowire on a Substrate

2007 ◽  
Author(s):  
Dhruv Singh ◽  
Timothy S. Fisher ◽  
Jayathi Y. Murthy
Keyword(s):  
Contact Resistance ◽  
Thermal Transport ◽  
Thermal Contact Resistance ◽  
Silicon Nanowire ◽  
Thermal Contact ◽  
Thermal Conductance ◽  
Boltzmann Transport ◽  
Constriction Resistance ◽  
The Wire ◽  
Volume Method

Increased interest in determining the thermal contact resistance encountered in various nanoscale devices derives from its role as a critical bottleneck to thermal transport at submicron scales. In the present work, the contact resistance of one such configuration — a silicon nanowire on a Si substrate — has been studied. A model based on the phonon Boltzmann transport equation (BTE) in the solid and Fourier conduction in the surrounding gas is used, in conjunction with a previously published finite volume method. This approach enables the accurate computation and examination of the relative magnitudes of constriction resistance, air thermal resistances, and the bulk resistance of the wire on transverse heat transport. The results confirm that the effective resistance is dominated by constriction resistance even for low and moderate wire acoustic thicknesses and that the constriction resistance is well represented by ballistic-limit models. In the mesoscale regime when the constriction is partially diffusive, a simple addition of diffusive and ballistic resistances is shown to work reasonably well, in agreement with previously published estimates. For higher wire acoustic thicknesses, the effects of bulk scattering in the wire cannot be ignored and a simple additive formula is inadequate. The fluid surrounding the wire can act as a complementary parallel pathway for thermal transport; however, in the high gas-phase Knudsen regime, the constriction resistance remains the controlling factor for overall thermal conductance.

Investigation of Pressure Dependent Thermal Contact Resistance between Silver Metallized SiC Chip and DBC Substrate

2015 ◽  
Vol 821-823 ◽  
pp. 452-455 ◽  
Author(s):  
Zsolt Toth Pal ◽  
Ya Fan Zhang ◽  
Ilja Belov ◽  
Hans Peter Nee ◽  
Mietek Bakowski
Keyword(s):  
Heat Transfer ◽  
Contact Resistance ◽  
Thermal Contact Resistance ◽  
Cfd Simulation ◽  
Thermal Contact ◽  
Cfd Model ◽  
Transfer Experiment ◽  
Transfer Path ◽  
Computational Fluid Dynamics Cfd ◽  
Pressure Independent

– Thermal contact resistances between a silver metallized SiC chip and a direct bonded copper (DBC) substrate have been measured in a heat transfer experiment. A novel experimental method to separate thermal contact resistances in multilayer heat transfer path has been demonstrated. The experimental results have been compared with analytical calculations and also with 3D computational fluid dynamics (CFD) simulation results. A simplified CFD model of the experimental setup has been validated. The results show significant pressure dependence of the thermal contact resistance but also a pressure independent part.

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