Photoinduced electron transfer from quantum dots to TiO2: elucidating the involvement of excitonic and surface states

2016 ◽  
Vol 18 (30) ◽  
pp. 20466-20475 ◽  
Author(s):  
Saurabh Chauhan ◽  
David F. Watson
Keyword(s):  
Quantum Dots ◽  
Electron Transfer ◽  
Photoinduced Electron Transfer ◽  
Surface States ◽  
Band Edge ◽  
Core Shell ◽  
Edge States ◽  
Cdse Qds

CdSe QDs transfer electrons from band-edge and surface states to TiO2; core/shell CdSe/ZnS QDs transfer electrons exclusively from band-edge states.

scholarly journals Controlling photoinduced electron transfer from PbS@CdS core@shell quantum dots to metal oxide nanostructured thin films

Nanoscale ◽  
2014 ◽  
Vol 6 (12) ◽  
pp. 7004-7011 ◽  
Author(s):  
H. Zhao ◽  
Z. Fan ◽  
H. Liang ◽  
G. S. Selopal ◽  
B. A. Gonfa ◽  
...  
Keyword(s):  
Thin Films ◽  
Quantum Dots ◽  
Electron Transfer ◽  
Metal Oxide ◽  
Photoinduced Electron Transfer ◽  
Transfer Rate ◽  
Shell Thickness ◽  
Wide Bandgap ◽  
Core Shell ◽  
Photoluminescence Lifetime

We investigate the photoelectron transfer rate from PbS@CdS core@shell QDs to wide bandgap mesoporous films using photoluminescence lifetime spectroscopy, which is strongly size, shell thickness and oxide dependent.

scholarly journals Photoinduced electron transfer in novel CdSe–Cu2Se type II core–shell quantum dots

RSC Advances ◽  
2019 ◽  
Vol 9 (26) ◽  
pp. 15092-15098 ◽  
Author(s):  
N. J. Simi ◽  
R. Vinayakan ◽  
V. V. Ison
Keyword(s):  
Quantum Dots ◽  
Electron Transfer ◽  
Photoinduced Electron Transfer ◽  
Core Shell ◽  
Type Ii ◽  
Shell System ◽  
System P

Herein we report the synthesis, characterisation and electron transfer studies of CdSe–Cu2Se QDs, a novel type II core–shell system.

Silicon quantum dot sensors for an explosive taggant, 2,3-dimethyl-2,3-dinitrobutane (DMNB)

2016 ◽  
Vol 52 (53) ◽  
pp. 8207-8210 ◽  
Author(s):  
Jin Soo Kim ◽  
Bomin Cho ◽  
Soo Gyeong Cho ◽  
Honglae Sohn
Keyword(s):  
Quantum Dots ◽  
Electron Transfer ◽  
Quantum Dot ◽  
Cadmium Selenide ◽  
Conduction Band ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Cdse Qds ◽  
Silicon Quantum Dot ◽  
Pl Quenching

Conduction band edge dependent photoluminescence (PL) quenching by electron transfer was observed. PL from silicon quantum dots (Si QDs) was quenched by 2,3-dimethyl-2,3-dinitrobutane (DMNB), however PL from cadmium selenide (CdSe QDs) was not quenched by DMNB.

Photoinduced electron transfer between quantum dots and pralidoxime: an efficient sensing strategy

2017 ◽  
Vol 41 (19) ◽  
pp. 10828-10834 ◽  
Author(s):  
A. R. Jose ◽  
A. E. Vikraman ◽  
K. Girish Kumar
Keyword(s):  
Quantum Dots ◽  
Electron Transfer ◽  
Fluorescence Quenching ◽  
Photoinduced Electron Transfer ◽  
Cds Quantum Dots

Photoinduced electron transfer (PET)-mediated fluorescence quenching of CdTe/CdS quantum dots by pralidoxime (PAM).

Ultrafast Carrier Dynamics, Optical Amplification, and Lasing in Nanocrystal Quantum Dots

MRS Bulletin ◽  
2001 ◽  
Vol 26 (12) ◽  
pp. 998-1004 ◽  
Author(s):  
Victor I. Klimov ◽  
Moungi G. Bawendi
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
Quantum Wires ◽  
Electronic States ◽  
Three Dimensions ◽  
Band Edge ◽  
Lasing Threshold ◽  
Wide Energy Range ◽  
Band Edge Emission ◽  
Edge States

Semiconductor materials are widely used in both optically and electrically pumped lasers. The use of semiconductor quantum wells (QWs) as optical-gain media has resulted in important advances in laser technology. QWs have a two-dimensional, step-like density of electronic states that is nonzero at the band edge, enabling a higher concentration of carriers to contribute to the band-edge emission and leading to a reduced lasing threshold, improved temperature stability, and a narrower emission line. A further enhancement in the density of the band-edge states and an associated reduction in the lasing threshold are in principle possible using quantum wires and quantum dots (QDs), in which the confinement is in two and three dimensions, respectively. In very small dots, the spacing of the electronic states is much greater than the available thermal energy (strong confinement), inhibiting thermal depopulation of the lowest electronic states. This effect should result in a lasing threshold that is temperatureinsensitive at an excitation level of only 1 electron-hole (e-h) pair per dot on average. Additionally, QDs in the strongconfinement regime have an emission wavelength that is a pronounced function of size, adding the advantage of continuous spectral tunability over a wide energy range simply by changing the size of the dots.

Balancing Electron Transfer and Surface Passivation in Gradient CdSe/ZnS Core–Shell Quantum Dots Attached to ZnO

2013 ◽  
Vol 4 (11) ◽  
pp. 1760-1765 ◽  
Author(s):  
Mohamed Abdellah ◽  
Karel Žídek ◽  
Kaibo Zheng ◽  
Pavel Chábera ◽  
Maria E. Messing ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electron Transfer ◽  
Surface Passivation ◽  
Core Shell

scholarly journals [Paper] Green Electroluminescence Generated by Band-edge Transition in Ag-In-Ga-S/GaSx Core/shell Quantum Dots

2021 ◽  
Vol 9 (4) ◽  
pp. 222-227
Author(s):  
Genichi Motomura ◽  
Yukiko Iwasaki ◽  
Tatsuya Kameyama ◽  
Tsukasa Torimoto ◽  
Taro Uematsu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Band Edge ◽  
Core Shell ◽  
Band Edge Transition
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