scholarly journals Rich magneto-absorption spectra of AAB-stacked trilayer graphene

2016 ◽  
Vol 18 (26) ◽  
pp. 17597-17605 ◽  
Author(s):  
Thi-Nga Do ◽  
Po-Hsin Shih ◽  
Cheng-Peng Chang ◽  
Chiun-Yan Lin ◽  
Ming-Fa Lin
Keyword(s):  
Optical Properties ◽  
Absorption Spectra ◽  
Tight Binding ◽  
Tight Binding Model ◽  
Binding Model ◽  
Trilayer Graphene

A generalized tight-binding model is developed to investigate the feature-rich magneto-optical properties of AAB-stacked trilayer graphene.

Magneto-optical properties of ABC-stacked trilayer graphene

2015 ◽  
Vol 17 (24) ◽  
pp. 15921-15927 ◽  
Author(s):  
Yi-Ping Lin ◽  
Chiun-Yan Lin ◽  
Yen-Hung Ho ◽  
Thi-Nga Do ◽  
Ming-Fa Lin
Keyword(s):  
Optical Properties ◽  
Optical Absorption ◽  
Absorption Spectra ◽  
Tight Binding ◽  
Tight Binding Model ◽  
Optical Absorption Spectra ◽  
Binding Model ◽  
Trilayer Graphene

The generalized tight-binding model is developed to investigate the magneto-optical absorption spectra of ABC-stacked trilayer graphene.

Magneto-electronic properties of rhombohedral trilayer graphene: Peierls tight-binding model

2011 ◽  
Vol 326 (3) ◽  
pp. 721-739 ◽  
Author(s):  
C.H. Ho ◽  
Y.H. Ho ◽  
Y.H. Chiu ◽  
Y.N. Chen ◽  
M.F. Lin
Keyword(s):  
Electronic Properties ◽  
Tight Binding ◽  
Tight Binding Model ◽  
Binding Model ◽  
Trilayer Graphene

A Tight-Binding Model for Optical Properties of Porous Silicon

1997 ◽  
Vol 491 ◽  
Author(s):  
M. Cruz ◽  
M. R. Beltran ◽  
C. Wang ◽  
J. Tagüeña-Martinez
Keyword(s):  
Optical Properties ◽  
Porous Silicon ◽  
Crystalline Silicon ◽  
Tight Binding ◽  
Basis Set ◽  
Extended Defects ◽  
Tight Binding Model ◽  
Binding Model ◽  
Semi Empirical ◽  
Good Agreement

ABSTRACTSemi-empirical tight-binding techniques have been extensively used during the last six decades to study local and extended defects as well as aperiodic systems. In this work we propose a tight-binding model capable of describing optical properties of disordered porous materials in a novel way. Besides discussing the details of this approach, we apply it to study porous silicon (p-Si). For this purpose, we use an sp3s* basis set and supercells, where empty columns are digged in the [001] direction in crystalline silicon (c-Si). The disorder of the pores is considered through a random perturbative potential, which relaxes the wave vector selection rule, resulting in a significant enlargement of the optically active k-zone. The dielectric function and the light absorption spectra are calculated. The results are compared with experimental data showing a good agreement.

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