Efficient ambipolar transport properties in alternate stacking donor–acceptor complexes: from experiment to theory

2016 ◽  
Vol 18 (20) ◽  
pp. 14094-14103 ◽  
Author(s):  
Yunke Qin ◽  
Changli Cheng ◽  
Hua Geng ◽  
Chao Wang ◽  
Wenping Hu ◽  
...  
Keyword(s):  
Transport Properties ◽  
Crystal Structures ◽  
Electrical Transport ◽  
Electrical Transport Properties ◽  
Donor Acceptor ◽  
Ambipolar Transport ◽  
Theoretical Simulations

Comprehensive investigations of crystal structures, electrical transport properties and theoretical simulations have been performed over a series of donor–acceptor complexes.

Ambipolar Transport Behaviors in Fullerene Peapod Transistors

2007 ◽  
Vol 121-123 ◽  
pp. 521-524 ◽  
Author(s):  
Ao Guo ◽  
Yun Yi Fu ◽  
Lun Hui Guan ◽  
Zu Jin Shi ◽  
Zhen Nan Gu ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electrical Transport ◽  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistors ◽  
Large Percentage ◽  
C60 Fullerene ◽  
Electrical Transport Properties ◽  
Ambipolar Behavior ◽  
Ambipolar Transport

The electrical transport properties of C70 and C60 fullerene peapods are investigated. We report the fabrications and performances of field-effect transistors (FETs) based on C70 and C60 fullerene peapods. A large percentage of the fullerene peapod-FETs we fabricated exhibit ambipolar characteristics with high Ion/Ioff ratio at room temperature in air. The origin of ambipolar behavior is qualitatively discussed.

scholarly journals Gold Nanoparticle-Mediated Noncovalent Functionalization of Graphene for Field-Effect Transistor

2021 ◽  
Author(s):  
Dongha Shin ◽  
Hwa Rang Kim ◽  
Byung Hee Hong
Keyword(s):  
Transport Properties ◽  
Gold Nanoparticle ◽  
Electrical Transport ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Electrical Transport Properties ◽  
Noncovalent Functionalization ◽  
Effect Transistor

Since of its first discovery, graphene has attracted much attention because of the unique electrical transport properties that can be applied to high-performance field-effect transistor (FET). However, mounting chemical functionalities...

scholarly journals Pressure-Induced Structural Phase Transition and Metallization in Ga2Se3 up to 40.2 GPa under Non-Hydrostatic and Hydrostatic Environments

Crystals ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 746
Author(s):  
Meiling Hong ◽  
Lidong Dai ◽  
Haiying Hu ◽  
Xinyu Zhang
Keyword(s):  
Phase Transition ◽  
Electrical Conductivity ◽  
High Pressure ◽  
Phase Transformation ◽  
Transport Properties ◽  
Electrical Transport ◽  
Structural Phase ◽  
Structure Evolution ◽  
Systematic Research ◽  
Electrical Transport Properties

A series of investigations on the structural, vibrational, and electrical transport characterizations for Ga2Se3 were conducted up to 40.2 GPa under different hydrostatic environments by virtue of Raman scattering, electrical conductivity, high-resolution transmission electron microscopy, and atomic force microscopy. Upon compression, Ga2Se3 underwent a phase transformation from the zinc-blende to NaCl-type structure at 10.6 GPa under non-hydrostatic conditions, which was manifested by the disappearance of an A mode and the noticeable discontinuities in the pressure-dependent Raman full width at half maximum (FWHMs) and electrical conductivity. Further increasing the pressure to 18.8 GPa, the semiconductor-to-metal phase transition occurred in Ga2Se3, which was evidenced by the high-pressure variable-temperature electrical conductivity measurements. However, the higher structural transition pressure point of 13.2 GPa was detected for Ga2Se3 under hydrostatic conditions, which was possibly related to the protective influence of the pressure medium. Upon decompression, the phase transformation and metallization were found to be reversible but existed in the large pressure hysteresis effect under different hydrostatic environments. Systematic research on the high-pressure structural and electrical transport properties for Ga2Se3 would be helpful to further explore the crystal structure evolution and electrical transport properties for other A2B3-type compounds.

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