New assembly design suitable for tower-shaped large size single-crystal diamond growth under high pressure and high temperature

CrystEngComm ◽  
2017 ◽  
Vol 19 (1) ◽  
pp. 137-141 ◽  
Author(s):  
Yadong Li ◽  
Xiaopeng Jia ◽  
Ning Chen ◽  
Liangchao Chen ◽  
Longsuo Guo ◽  
...  
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Single Crystal ◽  
Diamond Growth ◽  
Assembly Design ◽  
Large Size ◽  
Single Crystal Diamond

scholarly journals Ultrastrong catalyst-free polycrystalline diamond

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Qiang Li ◽  
Guodong Zhan ◽  
Dong Li ◽  
Duanwei He ◽  
Timothy Eric Moellendick ◽  
...  
Keyword(s):  
High Pressure ◽  
Wear Resistance ◽  
High Temperature ◽  
Single Crystal ◽  
Polycrystalline Diamond ◽  
Industrial Applications ◽  
Catalyst Free ◽  
Single Crystal Diamond ◽  
New Material ◽  
Polycrystalline Diamond Compact

AbstractDiamond is the hardest naturally occurring material found on earth but single crystal diamond is brittle due to the nature of catastrophic cleavage fracture. Polycrystalline diamond compact (PDC) materials are made by high pressure and high temperature (HPHT) technology. PDC materials have been widely used in several industries. Wear resistance is a key material property that has long been pursued for its valuable industrial applications. However, the inevitable use of catalysts introduced by the conventional manufacturing process significantly reduces their end-use performance and limits many of their potential applications. In this work, an ultra-strong catalyst-free polycrystalline diamond compact material has been successfully synthesized through innovative ultra-high pressure and ultra-high temperature (UHPHT) technology. These results set up new industry records for wear resistance and thermal stability for PDC cutters utilized for drilling in the oil and gas industry. The new material also broke all single-crystal diamond indenters, suggesting that the new material is too hard to be measured by the current standard single-crystal diamond indentation method. This represents a major breakthrough in hard materials that can expand many potential scientific research and industrial applications.

Large single crystal diamond grown in FeNiMnCo–S–C system under high pressure and high temperature conditions

2016 ◽  
Vol 25 (11) ◽  
pp. 118104 ◽  
Author(s):  
He Zhang ◽  
Shangsheng Li ◽  
Taichao Su ◽  
Meihua Hu ◽  
Guanghui Li ◽  
...  
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Single Crystal ◽  
Large Single Crystal ◽  
Temperature Conditions ◽  
Single Crystal Diamond

Growth of Diamond Anvils for High-Pressure Research by Chemical Vapor Deposition

1997 ◽  
Vol 499 ◽  
Author(s):  
Andrew Israel ◽  
Yogesh K. Vohra
Keyword(s):  
High Pressure ◽  
Chemical Vapor Deposition ◽  
High Temperature ◽  
Growth Rates ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Diamond Growth ◽  
High Pressure High Temperature ◽  
Single Crystal Diamond ◽  
Diamond Anvils

ABSTRACTGem quality diamond crystals are employed as anvils in high-pressure diamond cell research. Homoepitaxial growth experiments by microwave plasma-assisted chemical vapor deposition (MPCVD) have produced 1.76 mm (diameter) by 0.65 mm (thickness) sized diamonds. We report fundamental studies on diamond growth rate and quality as a function of reactor pressure and methane concentration, in a hydrogen plasma. By varying the growth conditions, large, single crystal diamond can be produced, which is ideal for manufacturing high pressure anvils.Traditional high pressure, high temperature (HPHT) techniques for production of synthetic diamond anvils are extremely expensive and chemical vapor deposition (CVD) provides an economically viable alternative. We report diamond growth rates up to 0.32 mg/hr, which are comparable to HPHT growth rates, and crystal quality approaching that of gem diamond. When perfected, diamond anvils produced from chemical vapor deposition methods could replace those manufactured by high pressure, high temperature synthesis.

High‐Pressure High‐Temperature Single‐Crystal Diamond Type IIa Characterization for Particle Detectors

2020 ◽  
Vol 217 (8) ◽  
pp. 1900888 ◽  
Author(s):  
Sergey V. Chernykh ◽  
Alexey V. Chernykh ◽  
Sergey A. Tarelkin ◽  
Mikhail N. Kondakov ◽  
Kirill D. Shcherbachev ◽  
...  
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Single Crystal ◽  
Particle Detectors ◽  
High Pressure High Temperature ◽  
Single Crystal Diamond ◽  
Diamond Type

Synergistic effect of titanium, boron and oxygen on large-size single-crystal diamond growth at high pressure and high temperature

2021 ◽  
Author(s):  
Guang-tong Zhou ◽  
Yu-hu Mu ◽  
Yuan-wen Song ◽  
Zhuang-fei Zhang ◽  
Yue-wen Zhang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Diamond Growth ◽  
High Concentration ◽  
Large Size ◽  
Single Crystal Diamond ◽  
High Boron ◽  
Scientific Significance ◽  
Oxygen Impurities ◽  
Carbon System ◽  
Oxygen Complexes

Abstract In this study, the synergistic impact of boron, oxygen and titanium on growing large single-crystal diamonds was studied using different concentrations of B2O3 in a solvent-carbon system under 5.5-5.7 GPa and 1300-1500 ℃. The study found that it was difficult for boron atoms to enter the crystal when boron and oxygen impurities were doped using B2O3 without the addition of Ti. However, a high boron content was achieved in the doped diamonds that were synthesised with the addition of Ti. Additionally, boron-oxygen complexes were found on the surface of the crystal, and oxygen-related impurities appeared in the crystal interior when Ti added in the FeNi-C system. The results showed that the introduction of Ti in the synthesis cavity could effectively control the amount of boron and oxygen in the crystal. This not only has important scientific significance for understanding the synergistic influence of boron, oxygen and titanium on the growth of diamond in the earth, but also for the preparation of high-concentration boron or oxygen containing semiconductor diamond technologies.

scholarly journals Epitaxial lateral growth of single-crystal diamond under high pressure by a plate-to-plate MPCVD

2021 ◽  
Vol 1 (1) ◽  
pp. 143-149
Author(s):  
Wei Cao ◽  
Deng Gao ◽  
Hongyang Zhao ◽  
Zhibin Ma
Keyword(s):  
High Pressure ◽  
Single Crystal ◽  
Lateral Growth ◽  
Single Crystal Diamond
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