scholarly journals Controlling nanowire nucleation and growth with a negative substrate bias

CrystEngComm ◽  
2016 ◽  
Vol 18 (16) ◽  
pp. 2913-2920
Author(s):  
J. Ball ◽  
H. S. Reehal
Keyword(s):  
Silicon Nanowires ◽  
Nucleation And Growth ◽  
Substrate Bias ◽  
Voltage Bias ◽  
Negative Substrate Bias

Applying a voltage bias to silicon nanowires during growth can influence wire density, diameter and length.

Improvement of Zr film purity by using a purified sputtering target and negative substrate bias voltage

2006 ◽  
Vol 201 (3-4) ◽  
pp. 1899-1901 ◽  
Author(s):  
J.-W. Lim ◽  
J.W. Bae ◽  
Y.F. Zhu ◽  
S. Lee ◽  
K. Mimura ◽  
...  
Keyword(s):  
Bias Voltage ◽  
Substrate Bias ◽  
Substrate Bias Voltage ◽  
Negative Substrate Bias

scholarly journals The effect of substrate bias on the piezoelectric properties of pulse DC magnetron sputtered AlN thin films

2020 ◽  
Vol 31 (24) ◽  
pp. 22833-22843
Author(s):  
Nguyen Quoc Khánh ◽  
János Radó ◽  
Zsolt Endre Horváth ◽  
Saeedeh Soleimani ◽  
Binderiya Oyunbolor ◽  
...  
Keyword(s):  
Piezoelectric Coefficient ◽  
Piezoresponse Force Microscopy ◽  
Substrate Bias ◽  
Vibration Energy Harvesting ◽  
Force Microscopy ◽  
Ni Substrate ◽  
Substrate Heating ◽  
Positive Ions ◽  
Negative Substrate Bias

AbstractSubstrate bias was applied for AlN deposition on rolled Ni sheet during pulse DC reactive sputtering to overcome the difficulty caused by thermal expansion mismatch between Ni substrate and AlN upon substrate heating. It was shown by Piezoresponse Force Microscopy (PFM) that the quality of the deposited AlN layer depends strongly on the negative substrate bias, i.e., the energy transferred via the bombardment of the accelerated positive ions on the sample. As the negative substrate bias becomes larger, the so formed layer shows higher piezoresponse, and better homogeneity. A Z-cut LiNbO3 single crystal was used as a reference to correct the PFM signals. The highest average d33 piezoelectric coefficient value, achieved at − 100 V substrate bias, is 3.4 pm/V indicating the feasibility of AlN deposition on rolled Ni substrate for vibration energy harvesting applications.

Characterization of Bias Sputtered Aluminum Film

1986 ◽  
Vol 76 ◽  
Author(s):  
Y. Homma ◽  
K. Hinode ◽  
T. Terada
Keyword(s):  
Heat Treatment ◽  
Bias Voltage ◽  
Void Growth ◽  
Aluminum Film ◽  
Substrate Bias ◽  
Substrate Bias Voltage ◽  
Film Characteristics ◽  
Negative Substrate Bias

ABSTRACTThe characteristics of RF bias-sputtered Al films are clarified. A negative substrate bias voltage, VDC, produced by RF biasing, strongly influences not only the planarization effect but also film characteristics such as hillock and void growth, and Ar content.Films deposited at VDc lower than -150 V. are significantly degraded due to the formation of two kinds of voids grown during annealing. One type is a blister-like voids, while the others are large and irregular. These are produced when Ar is released from the films during heat treatment. as evidenced by the fact that the amount of Ar released from the films rapidly increases when VDC is lower than -150 V.Although biasing strongly effects Al films resulting in the formation of an almost complete (111) texture. the effect degrades as VDC exceeds -200 V. Thus, Al bias sputtering requires a high resputtering rate and a VDC higher than -150 V to achieve appropriate planarization with suitable film characteristics.

Nucleation and growth of epitaxial silicide in silicon nanowires

2010 ◽  
Vol 70 (3-6) ◽  
pp. 112-125 ◽  
Author(s):  
Yi-Chia Chou ◽  
Kuo-Chang Lu ◽  
K.N. Tu
Keyword(s):  
Silicon Nanowires ◽  
Nucleation And Growth

Nano-Structured TiN Thin Films Deposited by Single Ion Beam Reactive Sputtering

2007 ◽  
Vol 555 ◽  
pp. 303-308
Author(s):  
Ž. Bogdanov ◽  
N. Popović ◽  
M. Zlatanović ◽  
B. Goncić ◽  
Z. Rakočević ◽  
...  
Keyword(s):  
Thin Films ◽  
Partial Pressure ◽  
Ion Beam ◽  
Ion Source ◽  
Preferred Orientation ◽  
Substrate Bias ◽  
Substrate Bias Voltage ◽  
Substrate Current ◽  
Tin Thin Films ◽  
Negative Substrate Bias

The reactive sputter deposition of TiN thin films onto glass substrate at the ambient temperature using a homemade broad beam argon ion source was investigated in order to deposit the films with nanostructural characteristics. While constant Ar beam energy of 2 keV was used, the N2 partial pressure and the substrate current, adjusted by different accelerator grid potentials (Vacc) were varied. A negative substrate bias voltage (100 V) was additionally applied. The TiN film structure was investigated by XRD and STM methods. All deposited films exhibited (220) preferred orientation, and the change in normalized peak intensity (I220/d), lattice spacing (d220) and full-with at half-maximum (FWHM) were investigated. As a result of higher energy bombardment with 100 V negative substrate bias, compared to the substrate current change with Vacc, nearly constant (220) peak broadening with the increase of N2 partial pressure was obtained. The measured grain diameter (STM and XRD) confirms that the grain size is less than 12 nm, and the (220) preferred orientation was disturbed but not destructed.

Improved Copper Chemical Vapor Deposition Process by Applying Substrate Bias

1996 ◽  
Vol 427 ◽  
Author(s):  
Won-Jun Lee ◽  
Sa-Kyun Rha ◽  
Seung-Yun Lee ◽  
Dong-Won Kim ◽  
Soung-Soon Chun ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Copper Film ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Substrate Bias ◽  
Value Analysis ◽  
Poling Direction ◽  
Negative Substrate Bias

AbstractThe substrate bias was applied during the chemical vapor deposition (CVD) process of copper in an effort to change the adsorption behaviors of the reactant. Copper films were deposited on TiN and SiO2 from Cu(hfac)(tmvs) with the substrate bias and without one. The surface morphology, the thickness, the sheet resistance and the purity of the films were investigated. When the negative substrate bias of -30 V was applied to the substrate, the deposition rate of copper increased both on TiN and SiO2. No change was observed in the chemical composition of the copper film deposited with substrate bias in comparison with that of the copper film deposited with no bias. It was calculated that Cu(hfac) has the dipole moment whose direction is from copper to hfac. Under the d. c.electric field, dipole tends to align along the poling direction. Resulting from the overlapping population (OP) value analysis, the improvement of deposition rate under negative substrate bias was explained due to the adsorption of copper atom in Cu(hfac) species directly onto the substrate by the electric field applied between the substrate and the gas showerhead.

6.8 A 1.5V 33Mpixel 3D-stacked CMOS image sensor with negative substrate bias

2016 ◽  
Author(s):  
Charles Chih-Min Liu ◽  
Manoj M. Mhala ◽  
Chin-Hao Chang ◽  
Honyih Tu ◽  
Po-Sheng Chou ◽  
...  
Keyword(s):  
Cmos Image Sensor ◽  
Image Sensor ◽  
Substrate Bias ◽  
Negative Substrate Bias

scholarly journals DEPOSITION OF TiN-BASED COATINGS USING VACUUM ARC PLASMA IN INCREASED NEGATIVE SUBSTRATE BIAS VOLTAGE

2019 ◽  
pp. 154-160
Author(s):  
A.S. Kuprin ◽  
S.A. Leonov ◽  
V.D. Ovcharenko ◽  
E.N. Reshetnyak ◽  
V.A. Belous ◽  
...  
Keyword(s):  
Bias Voltage ◽  
Nitrogen Pressure ◽  
Vacuum Arc ◽  
Substrate Bias ◽  
Arc Plasma ◽  
Properties Of Coatings ◽  
Substrate Bias Voltage ◽  
Titanium Nitride Coating ◽  
Phase And Chemical Composition ◽  
Negative Substrate Bias

The paper presents the results of the study on the influence of a high substrate bias voltage from 300 up to 1300 V on the titanium nitride coating deposition under nitrogen pressure of 2 Pa. The deposition rate, phase and chemical composition, adhesion and mechanical properties of coatings, macroparticle number and size distribution were investigated.

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