Plasma-induced highly efficient synthesis of boron doped reduced graphene oxide for supercapacitors

2016 ◽  
Vol 52 (73) ◽  
pp. 10988-10991 ◽  
Author(s):  
Shaobo Li ◽  
Zhaofeng Wang ◽  
Hanmei Jiang ◽  
Limei Zhang ◽  
Jingzheng Ren ◽  
...  

In this work, we presented a novel route to synthesize boron doped reduced graphene oxide (rGO) by using the dielectric barrier discharge (DBD) plasma technology under ambient conditions.

ChemCatChem ◽  
2020 ◽  
Vol 12 (19) ◽  
pp. 4825-4830
Author(s):  
Xiao Zhang ◽  
Kai‐Hong Chen ◽  
Zhi‐Hua Zhou ◽  
Liang‐Nian He

2019 ◽  
Vol 55 (72) ◽  
pp. 10717-10720 ◽  
Author(s):  
Hongtao Xie ◽  
Qin Geng ◽  
Xin Li ◽  
Ting Wang ◽  
Yonglan Luo ◽  
...  

Ultrasmall CeO2 on the surface of rGO sheets exhibits electrocatalytic performance towards artificial N2 conversion to NH3 with excellent selectivity.


2020 ◽  
Vol 8 (1) ◽  
pp. 77-81 ◽  
Author(s):  
Runbo Zhao ◽  
Chuangwei Liu ◽  
Xiaoxue Zhang ◽  
Xiaojuan Zhu ◽  
Peipei Wei ◽  
...  

A Ru2P–reduced graphene oxide hybrid acts as a superior catalyst for electrochemical N2 fixation in 0.1 M HCl, achieving a large NH3 yield of 32.8 μg h−1mgcat.−1 and a high faradaic efficiency of 13.04%−0.05 V vs. the reversible hydrogen electrode.


2020 ◽  
Vol 304 ◽  
pp. 111884 ◽  
Author(s):  
G. Tabares ◽  
A. Redondo-Cubero ◽  
L. Vazquez ◽  
M. Revenga ◽  
S. Cortijo-Campos ◽  
...  

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Yu-Sung Chang ◽  
Feng-Kuan Chen ◽  
Du-Cheng Tsai ◽  
Bing-Hau Kuo ◽  
Fuh-Sheng Shieu

AbstractIn this study, we use nitrogen-doped to improving the gas-sensing properties of reduced graphene oxide. Graphene oxide was prepared according to a modified Hummers’ method and then nitrogen-doped reduced graphene oxide (N-rGO) was synthesized by a hydrothermal method using graphene oxide and NH4OH as precursors. The rGO is flat and smooth with a sheet-like morphology while the N-rGO exhibits folded morphology. This type of folding of the surface morphology can increase the gas sensitivity. The N-rGO and the rGO sensors showed n-type and p-type semiconducting behaviors in ambient conditions, respectively, and were responsive to low concentrations of NO gases (< 1000 ppb) at room temperature. The gas-sensing results showed that the N-rGO sensors could detect NO gas at concentrations as low as 400 ppb. The sensitivity of the N-rGO sensor to 1000 ppb NO (1.7) is much better than that of the rGO sensor (0.012). Compared with pure rGO, N-rGO exhibited a higher sensitivity and excellent reproducibility.


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