Convertible resistive switching characteristics between memory switching and threshold switching in a single ferritin-based memristor

2016 ◽  
Vol 52 (26) ◽  
pp. 4828-4831 ◽  
Author(s):  
Chaochao Zhang ◽  
Jie Shang ◽  
Wuhong Xue ◽  
Hongwei Tan ◽  
Liang Pan ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Resistance Switching ◽  
Promising Candidate ◽  
Memory Switching ◽  
Threshold Switching ◽  
Switching Characteristics

The coexistence and inter-conversion between threshold and memory resistance switching in a ferritin memristor makes it a promising candidate for physiological applications.

Fabrication of Semi-transparent Resistive Random Access memory and Its Characteristics of Nonvolatile Resistive Switching

2011 ◽  
Vol 1292 ◽  
Author(s):  
Jung Won Seo ◽  
Seung Jae Baik ◽  
Sang Jung Kang ◽  
Koeng Su Lim
Keyword(s):  
Metal Oxide ◽  
Resistive Switching ◽  
Current Density ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Promising Candidate ◽  
Forward Current ◽  
Switching Characteristics

ABSTRACTThis report covers the resistive switching characteristics of cross-bar type semi-transparent (or see-through) resistive random access memory (RRAM) devices based on ZnO. In order to evaluate the transmittance of the devices, we designed the memory array with various electrode sizes and spaces between the electrodes. To prevent read disturbance problems due to sneak currents, we employed a metal oxide based p-NiO/n-ZnO diode structure, which exhibited good rectifying characteristics and high forward current density. Based on these results, we found that the combined metal oxide diode/RRAM device could be promising candidate with suppressed read disturbances of cross-bar type ZnO RRAM device.

Nonvolatile Resistive Memory Switching in Amorphous LaGdO3 Thin Films

2013 ◽  
Vol 1562 ◽  
Author(s):  
P. Misra ◽  
S. P. Pavunny ◽  
R. S. Katiyar
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
High Resistance ◽  
Temperature Dependent ◽  
Memory Switching ◽  
Ohmic Behavior ◽  
Nonvolatile Memories ◽  
Frenkel Emission ◽  
Switching Characteristics ◽  
Unipolar Resistive Switching

ABSTRACTNonvolatile unipolar resistive switching properties of the amorphous LaGdO3 thin films deposited by pulsed laser deposition have been studied. Reliable and repeatable switching of the resistance of LaGdO3 film was obtained between low and high resistance states with nearly constant resistance ratio ∼ 106 and non-overlapping switching voltages in the range of ∼0.6-0.75 V and 2.5-4 V respectively. The switching between low and high resistance states was attributed to the formation and rupture of conductive filaments using temperature dependent resistance measurements. The current conduction mechanisms of the LaGdO3 film in low and high resistance states were found to follow the Ohmic behavior and Poole-Frenkel emission respectively. The resistance of low and high resistance states of the film remained nearly constant for up to ∼ 104 seconds indicating good retention. The observed resistive switching characteristics of LaGdO3 thin films are promising for futuristic nonvolatile memories.

scholarly journals Light-activated Multilevel Resistive Switching Storage in Pt/Cs2AgBiBr6/ITO/Glass Devices

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Tingting Zhong ◽  
Yongfu Qin ◽  
Fengzhen Lv ◽  
Haijun Qin ◽  
Xuedong Tian
Keyword(s):  
Resistive Switching ◽  
Indium Tin Oxide ◽  
Sol Gel ◽  
Resistance Switching ◽  
High Density ◽  
Switching Behavior ◽  
Photoelectrical Properties ◽  
Ito Glass ◽  
One Step ◽  
Switching Characteristics

Abstract High-density Cs2AgBiBr6 films with uniform grains were prepared by a simple one-step and low-temperature sol–gel method on indium tin oxide (ITO) substrates. An explicit tristate bipolar resistance switching behavior was observed in the Pt/Cs2 AgBiBr6/ITO/glass devices under irradiation of 10 mW/cm2 (445 nm). This behavior was stable over 1200 s. The maximum ratio of the high and low resistance states was about 500. Based on the analysis of electric properties, valence variation and absorption spectra, the resistive switching characteristics were attributed to the trap-controlled space charge-limited current mechanism due to the bromine vacancies in the Cs2AgBiBr6 layer. On the other hand, it is suggested that the ordering of the Schottky-like barrier located at Pt/Cs2AgBiBr6 affects the three-state resistance switching behavior under light irradiation. The ability to adjust the photoelectrical properties of Cs2AgBiBr6-based resistive switching memory devices is a promising strategy to develop high-density memory. Graphical Abstract

scholarly journals Threshold Switching of Ag-Ga2Te3 Selector with High Endurance for Applications to Cross-Point Arrays

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Jaeyeon Kim ◽  
Jimin Lee ◽  
Minkyu Kang ◽  
Hyunchul Sohn
Keyword(s):  
Three Dimensional ◽  
Input Voltage ◽  
Switching Behavior ◽  
Practical Application ◽  
Promising Candidate ◽  
Cross Point ◽  
Pulse Input ◽  
Threshold Switching ◽  
Array Structures ◽  
Switching Characteristics

AbstractThreshold switching in chalcogenides has attracted considerable attention because of their potential application to high-density and three-dimensional stackable cross-point array structures. However, despite their excellent threshold switching characteristics, the selectivity and endurance characteristics of such selectors should be improved for practical application. In this study, the effect of Ag on the threshold switching behavior of a Ga2Te3 selector was investigated in terms of selectivity and endurance. The Ag-Ga2Te3 selector exhibited a high selectivity of 108 with low off-state current of < 100 fA, steep turn-on slope of 0.19 mV/dec, and high endurance of 109 cycles. The transient response was verified to depend on the pulse input voltage and measurement temperature. Considering its excellent threshold switching characteristics, the Ag-Ga2Te3 selector is a promising candidate for applications in cross-point array structures.

scholarly journals Demonstration of Threshold Switching and Bipolar Resistive Switching in Ag/SnOx/TiN Memory Device

Metals ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 1605
Author(s):  
Jooyoung Pyo ◽  
Seungjin Woo ◽  
Kisong Lee ◽  
Sungjun Kim
Keyword(s):  
Resistive Switching ◽  
Photoelectron Spectroscopy ◽  
Pulse Amplitude ◽  
Memory Device ◽  
Gradual Transition ◽  
Bipolar Resistive Switching ◽  
Memory Switching ◽  
Threshold Switching ◽  
Non Volatile Memory ◽  
Multiple Pulses

In this work, we observed the duality of threshold switching and non-volatile memory switching of Ag/SnOx/TiN memory devices by controlling the compliance current (CC) or pulse amplitude. The insulator thickness and chemical analysis of the device stack were confirmed by transmission electron microscope (TEM) images of the Ag/SnOx/TiN stack and X-ray photoelectron spectroscopy (XPS) of the SnOx film. The threshold switching was achieved at low CC (50 μA), showing volatile resistive switching. Optimal CC (5 mA) for bipolar resistive switching conditions with a gradual transition was also found. An unstable low-resistance state (LRS) and negative-set behavior were observed at CCs of 1 mA and 30 mA, respectively. We also demonstrated the pulse operation for volatile switching, set, reset processes, and negative-set behaviors by controlling pulse amplitude and polarity. Finally, the potentiation and depression characteristics were mimicked by multiple pulses, and MNIST pattern recognition was calculated using a neural network, including the conductance update for a hardware-based neuromorphic system.

Study on Preparation and Resistive Switching Characteristics of SnO2 Films

2014 ◽  
Vol 609-610 ◽  
pp. 169-174 ◽  
Author(s):  
Hong Xia Li ◽  
Hui Chen ◽  
Wei Qing Ke ◽  
Jun Hua Xi ◽  
Zhe Kong ◽  
...  
Keyword(s):  
Film Thickness ◽  
Resistive Switching ◽  
Sandwich Structure ◽  
Resistance Switching ◽  
Practical Application ◽  
Switching Characteristic ◽  
Low Resistance ◽  
Switching Characteristics ◽  
Switching Devices

In this paper, resistance switching devices with Au/SnO2/Al sandwich structure were fabricated. The prepared devices showed a reliable unipolar resistance switching characteristic. The forming voltage of SnO2-based resistance devices increased with increasing film thicknesses, while SnO2film thickness had little influence on set and reset voltages. When the SnO2film thickness was 46 nm, the device showed steady and reliable conversion under voltage sweeping and the ratio between high and low resistance states was higher than 102, which can basically satisfy the requirements for practical application.

Deposition of Bi2O3 Thin Films and Their Resistive Switching Characteristics

2012 ◽  
Vol 27 (3) ◽  
pp. 323-326
Author(s):  
Zhen-Guo JI ◽  
Jun-Jie WANG ◽  
Qi-Nan MAO ◽  
Jun-Hua XI
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Switching Characteristics

Titania Based Nano-ionic Memristive Crossbar Arrays: Fabrication and Resistive Switching Characteristics

2019 ◽  
Vol 9 (4) ◽  
pp. 486-493 ◽  
Author(s):  
S. Sahoo ◽  
P. Manoravi ◽  
S.R.S. Prabaharan
Keyword(s):  
Resistive Switching ◽  
Bottom Electrode ◽  
Rf Sputtering ◽  
Hysteresis Curve ◽  
Bipolar Switching ◽  
Post Annealing ◽  
Endurance Tests ◽  
Bilayer Device ◽  
Switching Characteristics ◽  
Pinched Hysteresis

Introduction: Intrinsic resistive switching properties of Pt/TiO2-x/TiO2/Pt crossbar memory array has been examined using the crossbar (4×4) arrays fabricated by using DC/RF sputtering under specific conditions at room temperature. Materials and Methods: The growth of filament is envisaged from bottom electrode (BE) towards the top electrode (TE) by forming conducting nano-filaments across TiO2/TiO2-x bilayer stack. Non-linear pinched hysteresis curve (a signature of memristor) is evident from I-V plot measured using Pt/TiO2-x /TiO2/Pt bilayer device (a single cell amongst the 4×4 array is used). It is found that the observed I-V profile shows two distinguishable regions of switching symmetrically in both SET and RESET cycle. Distinguishable potential profiles are evident from I-V curve; in which region-1 relates to the electroformation prior to switching and region-2 shows the switching to ON state (LRS). It is observed that upon reversing the polarity, bipolar switching (set and reset) is evident from the facile symmetric pinched hysteresis profile. Obtaining such a facile switching is attributed to the desired composition of Titania layers i.e. the rutile TiO2 (stoichiometric) as the first layer obtained via controlled post annealing (650oC/1h) process onto which TiO2-x (anatase) is formed (350oC/1h). Results: These controlled processes adapted during the fabrication step help manipulate the desired potential barrier between metal (Pt) and TiO2 interface. Interestingly, this controlled process variation is found to be crucial for measuring the switching characteristics expected in Titania based memristor. In order to ensure the formation of rutile and anatase phases, XPS, XRD and HRSEM analyses have been carried out. Conclusion: Finally, the reliability of bilayer memristive structure is investigated by monitoring the retention (104 s) and endurance tests which ensured the reproducibility over 10,000 cycles.

scholarly journals Multi-level characteristics of TiOx transparent non-volatile resistive switching device by embedding SiO2 nanoparticles

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Sera Kwon ◽  
Min-Jung Kim ◽  
Kwun-Bum Chung
Keyword(s):  
Resistive Switching ◽  
High Performance ◽  
Sio2 Nanoparticles ◽  
Visible Range ◽  
Resistive State ◽  
Switching Device ◽  
Structural Density ◽  
Multi Level ◽  
Switching Characteristics ◽  
Switching Devices

AbstractTiOx-based resistive switching devices have recently attracted attention as a promising candidate for next-generation non-volatile memory devices. A number of studies have attempted to increase the structural density of resistive switching devices. The fabrication of a multi-level switching device is a feasible method for increasing the density of the memory cell. Herein, we attempt to obtain a non-volatile multi-level switching memory device that is highly transparent by embedding SiO2 nanoparticles (NPs) into the TiOx matrix (TiOx@SiO2 NPs). The fully transparent resistive switching device is fabricated with an ITO/TiOx@SiO2 NPs/ITO structure on glass substrate, and it shows transmittance over 95% in the visible range. The TiOx@SiO2 NPs device shows outstanding switching characteristics, such as a high on/off ratio, long retention time, good endurance, and distinguishable multi-level switching. To understand multi-level switching characteristics by adjusting the set voltages, we analyze the switching mechanism in each resistive state. This method represents a promising approach for high-performance non-volatile multi-level memory applications.

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